5/
I27124 rev. D 02/03
20MT120UF
"FULL-BRIDGE" IGBT MTP
Features
Technology
• Positive V
CE(ON)
Temperature Coefficient
• 10µs Short Circuit Capability
• HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
• Low Diode V
F
• Square RBSOA
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved (File E78996)
•
UltraFast Non Punch Through (NPT)
UltraFast NPT IGBT
V
CES
= 1200V
I
C
= 40A
T
C
= 25°C
Benefits
Applications
• Rugged with UltraFast Performance
• Benchmark Efficiency above 20KHz
• Outstanding ZVS and Hard Switching
Operation
• Low EMI, requires Less Snubbing
• Excellent Current Sharing in Parallel
Operation
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
•
Optimized for Welding, UPS and SMPS
MMTP
Absolute Maximum Ratings
Parameters
V
CES
I
I
I
I
I
C
Max
1200
@ T
C
= 25°C
@ T
C
= 106°C
40
20
100
100
@ T
C
= 106°C
25
100
± 20
2500
240
96
@ T
C
= 25°C
@ T
C
= 100°C
Units
V
A
Collector-to-Emitter Breakdown Voltage
Continuos Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT)
CM
LM
F
FM
V
GE
V
ISOL
P
D
V
W
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1
20MT120UF
I27124 rev. D 02/03
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
(BR)CES
∆V
(BR)CES
/
∆T
J
V
CE(ON)
Min Typ Max Units Test Conditions
+1.3
3.29
4.42
3.87
5.32
3.99
-14
17.5
0.7
2.9
250
3.0
9.0
±250
3.59
4.66
4.11
5.70
4.27
6
V
V/°C
V
V
GE
= 0V, I
C
= 250µA
V
GE
= 0V, I
C
= 3mA (25-125°C)
=
=
=
=
=
=
=
=
=
=
=
=
15V, I
C
= 20A
15V, I
C
= 40A
15V, I
C
= 20A T
J
= 125°C
15V, I
C
= 40A T
J
= 125°C
15V, I
C
= 20A T
J
= 150°C
V
GE
, I
C
= 250µA
V
GE
, I
C
= 3mA (25-125°C)
50V, I
C
= 20A, PW =
0V, V
CE
= 1200V, T
J
0V, V
CE
= 1200V, T
J
0V, V
CE
= 1200V, T
J
± 20V
80µs
= 25°C
= 125°C
= 150°C
Collector-to-Emitter Breakdown Voltage 1200
Temperature Coeff. of
Breakdown Voltage
Collector-to-Emitter Saturation Voltage
V
GE(th)
Gate Threshold Voltage
∆V
GE(th)
/ Temperature Coeff. of
∆T
J
Threshold Voltage
g
fe
I
CES
Transconductance
Zero Gate Voltage Collector Current
(1)
4
V
GE
V
GE
V
GE
V
GE
V
GE
V
V
CE
mV/°C V
CE
S
µA
mA
nA
V
CE
V
GE
V
GE
V
GE
V
GE
I
GES
Gate-to-Emitter Leakage Current
(1)
I
CES
includes also opposite leg overall leakage
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
E
on
E
off
E
tot
C
ies
C
oes
C
res
RBSOA
Total Gate Charge (turn-on)
Gate-Emitter Charge (turn-on)
Gate-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Min Typ Max Units Test Conditions
176
19
89
513
402
915
930
610
1540
264
30
134
770
603
1373
1395
915
2310
µJ
nC
I
C
= 20A
V
CC
= 600V
V
GE
= 15V
V
CC
= 600V, I
C
= 20A
V
GE
= 15V, R
g
= 5Ω, L = 200µH
T
J
= 25°C, Energy losses include tail
and diode reverse recovery
V
CC
= 600V, I
C
= 20A
V
GE
= 15V, R
g
= 5Ω, L = 200µH
T
J
= 125°C, Energy losses include tail
and diode reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0 MHz
T
J
= 150°C, I
C
= 120A
V
CC
= 1000V, V
p
= 1200V
R
g
= 5Ω, V
GE
= +15V to 0V
T
J
= 150°C
V
CC
= 900V, V
p
= 1200V
R
g
= 5Ω, V
GE
= +15V to 0V
µJ
2530 3790
344
516
78
117
full square
pF
SCSOA
Short Circuit Safe Operating Area
10
µs
2
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20MT120UF
I27124 rev. D 02/03
Diode Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
FM
Diode Forward Voltage Drop
Min
Typ Max Units Test Conditions
2.48
3.28
2.44
3.45
2.21
420
98
33
2.94
3.90
2.84
4.14
2.93
630
150
50
V
I
C
= 20A
I
C
= 40A
I
C
= 20A, T
J
= 125°C
I
C
= 40A, T
J
= 125°C
I
C
= 20A, T
J
= 150°C
V
GE
= 15V, R
g
= 5Ω, L = 200µH
V
CC
= 600V, I
C
= 20A
T
J
= 125°C
E
rec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
µJ
ns
A
Thermal- Mechanical Specifications
Parameters
T
J
T
STG
R
thJC
R
thCS
Operating Junction Temperature Range
Storage Temperature Range
Junction-to-Case
Case-to-Sink
IGBT
Diode
Module
5.5
8
3 ± 10%
66
Nm
g (oz)
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Min
- 40
- 40
Typ
Max
150
125
Units
°C
°C/ W
0.35
0.40
0.06
0.52
0.61
Clearance (
external shortest distance in air
between two terminals)
mm
Creepage (
shortest distance along external
surface of the insulating material between 2 terminals
)
T
Wt
Mounting Torque
Weight
(2)
(2) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
compound. Lubricated threads
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3
20MT120UF
I27124 rev. D 02/03
50
250
40
200
20
Ptot (W)
0
20
40
60
80
100 120 140 160
30
150
IC (A)
100
10
50
0
T C (°C)
0
0
20
40
60
80
100 120 140 160
TC (°C)
Fig. 2
- Power Dissipation vs. Case
Temperature
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
1000
100
10 µs
100 µs
1
1ms
DC
IC (A)
10
1
100
10
IC (A)
0.1
0.01
1
10
100
VCE (V)
1000
10000
10
100
1000
10000
VCE (V)
Fig. 3
- Forward SOA
T
C
= 25°C; T
J
≤
150°C
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
4
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20MT120UF
I27124 rev. D 02/03
100
80
VGE
VGE
VGE
VGE
VGE
= 18V
= 15V
= 12V
= 10V
= 8.0V
100
80
VGE
VGE
VGE
VGE
VGE
= 18V
= 15V
= 12V
= 10V
= 8.0V
ICE (A)
40
ICE (A)
0
2
4
6
VCE (V)
8
10
60
60
40
20
20
0
0
0
2
4
6
VCE (V)
8
10
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
100
80
VGE
VGE
VGE
VGE
VGE
= 18V
= 15V
= 12V
= 10V
= 8.0V
120
100
80
-40°C
25°C
125°C
I CE (A)
60
IF (A)
40
20
0
0
2
4
6
VCE (V)
8
10
60
40
20
0
0.0
1.0
2.0
3.0
4.0
5.0
VF (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 125°C; tp = 80µs
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80µs
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5
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