Product Description
Sirenza Microdevices SNA-300 is a GaAs monolithic broad-
band amplifier (MMIC) in die form. At 1950 MHz, this amplifier
provides 22dB of gain when biased at 35mA .
These unconditionally stable amplifiers are designed for use
as general purpose 50 ohm gain blocks. Its small size
(0.350mm x 0.345mm) and gold metallization make it an ideal
choice for use in hybrid circuits. The SNA-300 is 100% DC
tested and sample tested for RF performance.
External DC decoupling capacitors determine low frequency
response. The use of an external resistor allows for bias
flexibility and stability.
The SNA-300 is supplied in gel paks at 100 devices per pak.
Also available in packaged form (SNA-376 & SNA-386)
Output Power vs. Frequency
12
11
SNA-300
DC-3 GHz, Cascadable
GaAs HBT MMIC Amplifier
Product Features
Cascadable 50 Ohm Gain Block
22dB Gain, +10dBm P1dB
1.5:1 Input and Output VSWR
Operates From Single Supply
Through wafer via for ground
Applications
Broadband Driver Amplifier
IF Amplifier or gain stage for VSAT, LMDS,
WLAN, and Cellular Systems
dBm
10
9
8
0.1
0.5
1
1.5
GHz
2
4
6
8
10
Symbol
Parame te r
Units Fre que ncy M in. T yp. M ax.
dB
dB
dB
GHz
dB m
dB m
dB
dB
dB
V
mA
dB /°C
°C/W
1950 M Hz
1950 M Hz
1950 M Hz
1950
0.1-3.0 GHz
3.3
30.0
8.0
20.0
850 M Hz
1950 M Hz
2400 M Hz
23.0
22.0
21.5
3.0
10.0
23.0
4.0
11.7
20.0
3.7
35.0
-0.003
260.0
G
p
S m all S ignal P ower Gain [2]
20.5
20.0
23.5
23.0
B W 3dB 3dB B andwidth
P
1dB
OIP
3
NF
RL
IS OL
V
D
Output P ower at 1dB Com press ion [2]
Output Third Order Interc ept P oint [2]
Nois e Figure
Input / Output Return Los s
Reverse Isolation
Device Operating V oltage [1]
4.1
40.0
I
D
Device Operating Current [1]
dG/dT Device Gain Tem perature Coefficient
R
TH
, j-b Therm al Res istanc e (junction to bac ks ide)
Test Conditions:
V
S
= 8 V
R
BIAS
= 120 Ohms
I
D
= 35 mA Typ.
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0
T
L
= 25ºC, Z
S
= Z
L
= 50 Ohms, [1] 100% DC tested, [2] Sample tested
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
303 South Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102432 Rev B
Preliminary
SNA-300 DC-3 GHz Cascadable MMIC Amplifier
Typical Performance at 25° C (Vds =3.7V, Ids = 35mA)
(data includes bond wires)
|S11| vs. Frequency
0
24
-10
22
|S21| vs. Frequency
dB
-20
dB
20
-30
18
-40
0.1
0.5
1
1.5
2
2.5
3
3.5
4
16
0.1
0.5
1
1.5
2
2.5
3
3.5
4
GHz
GHz
|S12| vs. Frequency
0
-5
-10
-10
0
|S22| vs. Frequency
dB
-15
-20
dB
-20
-30
-25
-30
0.1
0.5
1
1.5
2
2.5
3
3.5
4
-40
0.1
0.5
1
1.5
2
2.5
3
3.5
4
GHz
GHz
Noise Figure vs. Frequency
5
4.5
24
26
TOIP vs. Frequency
dB
4
3.5
3
0.1
0.5
1.0
1.5
2.0
2.5
3.0
dBm
22
20
0.5
1
1.5
2
2.5
3
3.5
4
GHz
GHz
Absolute Maximum Ratings
Parameter
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Max.
RF Input Pow er
Max.
Junction Temp
. (T
J
)
Operating Temp
. Range (T
L
)
Absolute Limit
75
mA
6V
+20 dBm
+
200
°C
-40°C to +85°C
+150°C
Max.
Storage Temp
.
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the follow ing expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
303 South Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-102432 Rev B
Preliminary
SNA-300 DC-3 GHz Cascadable MMIC Amplifier
Typical Application Circuit
R
BIAS
1 uF
1000
pF
Application Circuit Element Values
Reference
Designator
Frequency (Mhz)
500
850
1950
2400
3500
C
B
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
C
D
L
C
C
D
L
C
RF in
C
B
1
4
SNA-300
3
C
B
RF out
Recommended Bias Resistor Values for I
D
=35mA
R
BIAS
=( V
S
-V
D
) / I
D
Supply Voltage(V
S
)
R
BIAS
5V
36
6V
68
8V
120
10 V
180
2
Note: R
BIAS
provides DC bias stability over temperature.
GND
VIA
Die Thickness - 0.004 [0.1]
Dimensions - inches [mm]
RFIN
RFOUT
(above configuration used for S-parameter data)
Suggested Bonding Arrangement
Simplified Schematic of MMIC
For recommended handling, die attach, and bonding methods, see the following application note at
www.sirenza.com.
AN-041 (PDF) Handling of Unpackaged Die
Caution: ESD sensitive
Part Number Ordering Information
Part N umber
SNA-300
Gel Pack
1 0 0 p cs. p e r p a ck
Appropriate precautions in handling, packaging
and testing devices must be observed.
303 South Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-102432 Rev B
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