Product Description
Sirenza Microdevices’ SBB-5089 is a high performance InGaP HBT MMIC
amplifier utilizing a Darlington configuration with an active bias network.
The active bias network provides stable current over temperature and
process Beta variations. Designed to run directly from a 5V supply, the
SBB-5089 does not require a dropping resistor as compared to typical
Darlington amplifiers. The SBB-5089 product is designed for high linearity
5V gain block applications that require small size and minimal external
components. It is internally matched to 50 ohms.
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU
Directive 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide nor halogenated fire retardants.
SBB-5089
SBB-5089Z
Pb
RoHS Compliant
&
Green
Package
0.05-6 GHz, Cascadable
Active Bias InGaP/GaAs HBT MMIC Amplifier
Product Features
•
•
•
•
•
•
•
•
Available in Lead free, RoHS compliant, & Green packaging
Wideband Flat Gain to 4GHz: +/-1.1dB
P1dB = 20.4 dBm @ 1950MHz
Single Fixed 5V Supply
Robust 1000V ESD, Class 1C
Patented Thermal Design & Patent Pending Bias Circuit
Low Thermal Resistance
MSL 1 moisture rating
Gain & Return Loss vs. Frequency (w/ BiasTees)
30
20
10
dB
0
-10
-20
-30
-40
0
1
2
3
Frequency (GHz)
Parameters
S21
S22
S11
Applications
•
•
•
•
Units
4
5
6
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
Wideband Intrumentation
Wireless Data, Satellite Terminals
Frequency
Min.
Typ.
Max.
Symbol
S
21
Small Signal Gain
dB
850 MHz
1950 MHz
6000 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
19
18.5
14.5
19
33
20.5
20
16
20.5
20.5
38.5
35
3000
22
21.5
17.5
P
1dB
IP
3
Bandwidth
S
11
S
22
S
12
NF
V
D
I
D
R
TH
, j-l
Test Conditions:
Output Power at 1 dB Compression
Third Order Intercept Point
S
11
, S
22
: Minimum 10dB Return Loss (typ.)
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction - lead)
V
D
= 5V
T
L
= 25°C
I
D
= 75 mA Typ.
Z
S
= Z
L
= 50 Ohms
dBm
dBm
MHz
dB
dB
dB
dB
V
mA
°C/W
1950 MHz
1950 MHz
1950 MHz
1950 MHz
10
10
14
14
23.3
4.2
5
4.9
5.25
92
65
75
69.9
OIP
3
Tone Spacing = 1MHz, Pout per tone = 0 dBm
Tested with Bias Tees
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103839 Rev E
SBB-5089 0.05-6 GHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies (With .5-3.5 GHz Application Circuit)
Frequency (MHz)
Symbol
Parameter
Unit
500
850
1950
2500
3500
4000
S
21
OIP
3
P
1dB
S
11
S
22
S
12
Small Signal Gain
Output Third Order Intercept Point
Output Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
dB
dBm
dBm
dB
dB
dB
dB
I
D
= 75 mA Typ.
Z
S
= Z
L
= 50 Ohms
20.8
38.6
20.5
27.2
31.8
22.7
3.8
20.8
39.2
20.4
22.7
21.5
22.8
3.8
20.1
34.9
20.4
14.6
13.5
23.4
4.1
19.8
32.8
19.4
12.9
12.0
23.7
4.1
18.7
29.4
16.9
10.6
13.5
24.7
4.3
17.8
26.8
14.7
11.6
27.5
25.7
4.6
NF
Noise Figure
Test Conditions:
Test Conditions:
VCC = 5V
T
L
= 25°C
8
7
6
5
dB
OIP
3
Tone Spacing = 1MHz, Pout per tone = 0 dBm
Noise Figure @ 25C
4
3
2
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Avg. BiasTee
Avg. AppCkt
P1dB vs. Frequency with App. Ckt.
25
20
Frequency (GHz)
dBm
15
45
40
35
dBm
OIP
3
vs. Frequency with App. Ckt.
10
P1dB 25C
P1dB -40C
P1dB 85C
5
0.5
1
1.5
2
2.5
Frequency (GHz)
3
3.5
4
30
25
20
15
0.5
1
1.5
2
2.5
Frequency (GHz)
3
3.5
4
IP3 25C
IP3 -40C
IP3 85C
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-103839 Rev E
SBB-5089 0.05-6 GHz Cascadable MMIC Amplifier
Application Schematic
V
S
1 uF
1200
pF
Application Circuit Element Values
Reference
Designator
Frequency (MHz)
500 to 3500
C
B
L
C
C
B
L
C
68pF
82nH 1008CS
RF in
C
B
4
1
SBB-5089
3
2
C
B
RF out
Evaluation Board Layout
+
Absolute Maximum Ratings
Parameter
Max. Device Current (I
D
)
Max. Device Voltage (V
D
)
Max. RF Input Power
Max. Operating Dissipated
Power
Max. Junction Temp. (T
J
)
Operating Temp. Range (T
L
)
Max. Storage Temp.
Absolute Limit
100 mA
5.5 V
+12 dBm
0.55 W
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating
values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
T
L
=T
LEAD
ESD Class 1C
Appropriate precautions in handling, packaging and testing
devices must be observed.
Mounting Instructions
1. Solder the copper pad on the backside of the device package to
the ground plane.
2. Use a large ground pad area with many plated through-holes as
shown.
3. We recommend 1 or 2 ounce copper. Measurement for this
datasheet were made on a 31 mil thick FR-4 board with 1
ounce copper on both sides.
MSL
(Moisture Sensitivity Level)
Rating: Level 1
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-103839 Rev E
ARM技术
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