Sirenza Microdevices’ SBA-4089 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
configuration designed with InGaP process technology provides
broadband performance up to 5 GHz with excellent thermal
perfomance. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppression of
intermodulation products. Only a single positive supply voltage,
DC-blocking capacitors, a bias resistor, and an optional RF choke
are required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. This package is also manu-
factured with green molding compounds that contain no anti-
mony trioxide nor halogenated fire retardants.
Gain and Return Loss vs Frequency
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
0
S21
SBA-4089Z
Pb
RoHS Compliant
&
Green
Package
DC-5 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• IP3 = 33.5dBm @ 1950MHz
• Pout=13.3 dBm @-45dBc ACP IS-95 1950MHz
• Robust 1000V ESD, Class 1C
• Operates From Single Supply
• Patented Thermal Design
S22
S11
Applications
•
•
•
•
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite Terminals
U n it s
dB
dBm
dBm
dB m
MHz
dB
dB
dB
V
mA
° C /W
1950 M Hz
1950 M Hz
1950 M Hz
4 .8
72
1 4 .0
1 1 .0
F re q u e n c y
850 M Hz
1950 M Hz
850 M Hz
1950 M Hz
850 M Hz
1950 M Hz
1950 M Hz
M in .
1 3 .5
1 3 .1
1 7 .5
3 1 .5
Typ .
1 5 .0
1 4 .6
1 9 .2
1 9 .0
3 6 .5
3 3 .5
1 3 .3
4400
2 1 .0
1 5 .0
4 .8
5 .0
80
70
5 .8
5 .4
88
M ax.
1 6 .5
1 6 .1
dB
1
2
3
4
Frequency (GHz)
5
6
S ym bol
G
P
P a ra m e te r
S m a ll S i g n a l G a i n
O u tp u t P o w e r a t 1 d B C o m p r e s s i o n
O u tp u t T h i r d O r d e r In te r c e p t P o i n t
O u tp u t P o w e r @ - 4 5 d B c A C P IS - 9 5
9 F o r w a r d C h a n n e ls
D e te r m i n e d b y R e tu r n L o s s ( > 1 0 d B )
In p u t R e tu r n L o s s
O u tp u t R e tu r n L o s s
N o is e F ig u re
D e v i c e O p e r a ti n g V o lta g e
D e v i c e O p e r a ti n g C u r r e n t
T h e r m a l R e s i s ta n c e
Test Conditions:
1dB
O IP
P
3
OUT
B a n d w i d th
IR L
ORL
NF
V
D
I
D
R
T H
, j- l
( ju n c ti o n to le a d )
V
S
= 8 V
R
BIAS
= 39 Ohms
I
D
= 80 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
Performance tests and ratings for Sirenza Microdevices’ products were performed internally by Sirenza and measured using specific computer systems and/or and components and reflect the approximate
performance of the products as measured by those tests. Any difference in circuit implementation, test software or test equipment may affect actual performance. The information provided herein is believed to be
reliable at press time and Sirenza Microdevices assumes no responsibility for the use of this information. All such use shall be entirely at the user’s own risk. Prices and specifications for Sirenza Microdevices’
products are subject to change without notice. Buyers should consult Sirenza Microdevices’ standard terms and conditions of sale for Sirenza’s limited warranty with regard to its products. No patent rights or
licenses licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any product for use in life-support devices and/or systems.
303 South Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102822 Rev. D
SBA-4089 DC-5 GHz Cascadable MMIC Amplifier
Preliminary
Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
Symbol
Parameter
Unit
100
500
850
1950
2400
3500
G
OIP
3
P
1dB
IRL
ORL
S
21
NF
Small Signal Gain
Output Third Order Intercept Point
Output Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
V
S
= 8 V
R
BIAS
= 39 Ohms
dB
dBm
dBm
dB
dB
dB
dB
15.3
37.1
19.0
47
22
18
4.1
15.3
36.2
19.1
33
22
18
4.3
15.0
14.6
Frequency (MHz)
36.5
19.0
29
21
18.7
4.2
33.5
19.0
21
15
19
4.8
14.3
32.7
18.3
17.5
13.3
19
----
13.2
30.5
16.3
13.3
12
19
----
Test Conditions:
I
D
= 80 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
Test Conditions:
Noise Figure vs Frequency
7.00
6.00
5.00
4.00
dB
3.00
2.00
1.00
0.00
0
0.5
1
1.5
2
2.5
3
Frequency(GHz)
+25c
-40c
+85c
3.5
Absolute Maximum Ratings
Parameter
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Max.
RF Input Power
Max Operating Dissipated
Power
Max.
Junction Temp.
(T
J
)
Operating Temp.
Range (T
L
)
Absolute Limit
130 mA
6V
+17 dBm
0.65 W
+150°C
-40°C to +85°C
+150°C
Max.
Storage Temp.
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
T
L
=T
LEAD
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
OIP3 vs Frequency
40
38
P1dB vs Frequency
22
+25c
21
36
34
32
30
28
26
24
22
20
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
+25c
-40c
+85c
-40c
+85c
20
19
18
17
16
15
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
303 South Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
dBm
dBm
http://www.sirenza.com
EDS-102822 Rev. D
SBA-4089 DC-5 GHz Cascadable MMIC Amplifier
|S
11
| vs. Frequency
0
-5
-10
-15
s11(dB)
-20
-25
-30
-35
-40
-45
-50
0
1
2
3
4
Frequency (GHz)
5
6
+25c
-40c
+85c
Preliminary
Advanced Data Sheet
|S
21
| vs. Frequency
18
16
14
12
s21(dB)
10
8
6
4
2
0
0
1
2
3
4
Frequency (GHz)
5
6
+25c
-40c
+85c
|S
12
| vs. Frequency
-15
+25c
-40c
+85c
|S
22
| vs. Frequency
0
-16
-5
s12(dB)
s22(dB)
-17
-10
-18
-15
+25c
-40c
+85c
-19
-20
-20
0
1
2
3
4
Frequency (GHz)
5
6
-25
0
1
2
3
4
Frequency (GHz)
5
6
IS-95 @ 850MHz
Adj. Channel Pwr. Vs. Channel Output Pwr.
-25
-30
-35
-40
-45
dBc
IS-95 @ 1950MHz
Adj. Channel Pwr. Vs. Channel Output Pwr.
-25
-30
-35
-40
-45
dBc
+25c
-40c
+85c
-50
-55
-60
-65
-70
-75
7
8
9
10
11
12
dBm
-50
-55
-60
-65
-70
-75
+25c
-40c
+85c
13
14
15
16
17
7
8
9
10
11
12
dBm
13
14
15
16
17
303 South Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-102822 Rev. D
SBA-4089 DC-5 GHz Cascadable MMIC Amplifier
Preliminary
Advanced Data Sheet
Basic Application Circuit
V
S
R
BIAS
Application Circuit Element Values
Frequency (Mhz)
Reference
Designator
500
850
1950
2400
3500
1 uF
1000
pF
C
D
L
C
4
C
B
C
D
L
C
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
RF in
C
B
1
SBA-4089
3
2
C
B
RF out
Recommended Bias Resistor Values for I
D
=80mA
R
BIAS
=( V
S
-V
D
) / I
D
Supply Voltage(V
S
)
R
BIAS
7.5 V
33
8V
39
10 V
68
12 V
91
V
S
R
BIAS
1 uF
1000 pF
Note: R
BIAS
provides DC bias stability over temperature.
BA4
C
B
L
C
C
D
C
B
Mounting Instructions
1. Solder the copper pad on the backside of the
device package to the ground plane.
2. Use a large ground pad area with many plated
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurement
for this data sheet were made on a 31 mil thick FR-4
单片机
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