Designed with InGaP process technology for improved reliability,
a Darlington configuration is utilized for broadband performance
up to 5 Ghz. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppression of
intermodulation products.
Small Signal Gain vs. Frequency
NGA-689
DC-5000 MHz, Cascadable GaAs
HBT MMIC Amplifier
See Application Note AN-059 for Alternates
OBSOLETE
16
14
dB
12
10
8
6
0
2
4
Frequency GHz
Product Features
11.7dB Gain, 18.9 dBm P1dB at 1950Mhz
Cascadable 50 ohm: 1.4:1 VSWR
Operates from Single Supply
Low Thermal Resistance Package
Unconditionally Stable
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Units
dBm
Frequency
850 M Hz
1950 M Hz
2400 M Hz
850 M Hz
1950 M Hz
2400 M Hz
850 M Hz
1950 M Hz
2400 M Hz
DC - 5000 M Hz
DC - 5000 M Hz
2000 M Hz
5.2
72
10.7
Min.
Ty p.
19.9
18.9
17.9
36.9
33.6
32.1
11.9
11.7
11.6
5000
1.4:1
1.4:1
6.0
5.8
80
91
6.5
88
13.1
Max.
6
8
Sy mbol
P
1dB
Parameter
Output Pow er at 1dB Compression
OIP
3
Output Third Order Intercept Point
dBm
G
Small Signal Gain
dB
M Hz
-
-
dB
V
mA
°C/W
Bandw idth
Determined by Return Loss (>10dB)
Input VSWR
Output VSWR
NF
V
D
I
D
R
TH
, j-l
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
Test Conditions:
V
S
= 8 V
R
BIAS
= 27 Ohms
I
D
= 80 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101442 Rev OBS
Preliminary
OBSOLETE
NGA-689 DC-5.0 GHz 5.8V GaAs HBT
Key parameters, at typical operating frequencies:
Parameter
500 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
850 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
1950 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
2400 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Reverse Isolation
Ty pical
25ºC
12.0
37.2
19.9
19.6
19.7
11.9
36.9
19.9
18.5
19.7
11.7
33.6
18.9
16.0
19.5
11.6
32.1
17.9
15.9
19.4
Units
dB
dBm
dBm
dB
dB
dB
dBm
dBm
dB
dB
dB
dBm
dBm
dB
dB
dB
dBm
dBm
dB
dB
Test Condition
(I
D
= 80mA, unless otherwise noted)
Tone spacing = 1 M Hz, Pout per tone = 0dBm
Tone spacing = 1 M Hz, Pout per tone = 0dBm
Tone spacing = 1 M Hz, Pout per tone = 0dBm
Tone spacing = 1 M Hz, Pout per tone = 0dBm
Absolute Maximum Ratings
Parameter
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Max.
RF Input Pow er
Max.
Junction Temp
. (T
J
)
Operating Temp
. Range (T
L
)
Absolute Limit
1
20
mA
7V
+13 dBm
+150°C
-40°C to +85°C
+150°C
Max.
Storage Temp
.
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the follow ing expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101442 Rev OBS
Preliminary
OBSOLETE
NGA-689 DC-5.0 GHz 5.8V GaAs HBT
14
12
10
8
6
4
2
0
0
S21, I
D
= 80mA, T = 25ºC
0
-5
dB
S12, I
D
= 80mA, T = 25ºC
dB
-10
-15
-20
-25
‘
2
4
GHz
6
8
0
2
4
GHz
6
8
0
-5
dB
S11, I
D
= 80mA, T = 25ºC
0
-5
dB
S22, I
D
= 80mA, T = 25ºC
-10
-15
-20
-25
0
2
4
GHz
-10
-15
-20
-25
6
8
0
2
4
GHz
6
8
Noise Figure
Typical Bias Conditions, T = 25ºC
7.0
6.5
dB
120
100
Id (mA)
6.0
5.5
5.0
4.5
0.5
0.7
0.9
1.1
1.3
GHz
1.5
1.7
1.9
80
60
40
20
0
0
2
4
6
Device Voltage (V)
8
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-101442 Rev OBS
Preliminary
OBSOLETE
NGA-689 DC-5.0 GHz 5.8V GaAs HBT
S21 vs. Bias, T = 25ºC
IP3 vs. Bias, T = 25ºC
13.0
12.5
dB
60mA
45
40
35
30
60mA
80mA
100mA
12.0
dB
11.5
11.0
10.5
0.5
1.5
GHz
25
20
2.5
3.5
80mA
100mA
0.5
1.5
GHz
2.5
3.5
P1dB vs. Bias, T = 25ºC
25
20
dBm
dB
13.0
12.5
12.0
11.5
60mA
80mA
100mA
S21 vs. Temperature, I
D
= 80mA
15
10
5
0
0.5
1.5
GHz
25C
11.0
10.5
2.5
3.5
-40C
85C
0.5
1.0
1.5
2.0
GHz
2.5
3.0
3.5
45
40
dBm
IP3 vs. Temperature, I
D
= 80mA
25
20
dBm
P1dB vs. Temperature, I
D
= 80mA
35
30
25C
15
10
5
0
25C
-40C
85C
25
20
0.5
-40C
85C
1.0
1.5
2.0
GHz
2.5
3.0
3.5
0.5
1.0
1.5
2.0
GHz
2.5
3.0
3.5
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-101442 Rev OBS
Preliminary
OBSOLETE
NGA-689 DC-5.0 GHz 5.8V GaAs HBT
Basic Application Circuit
R
BIAS
1 uF
1000
pF
Application Circuit Element Values
Reference
Designator
Frequency (Mhz)
500
850
1950
2400
3500
V
S
C
D
L
C
C
B
C
D
L
C
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
RF in
C
B
1
4
NGA-689
3
C
B
RF out
2
Recommended Bias Resistor Values for I
D
=80mA
R
BIAS
=( V
S
-V
D
) / I
D
Supply Voltage(V
S
)
R
BIAS
8V
27
9V
39
10 V
51
12 V
75
V
S
R
BIAS
N6
1 uF
1000 pF
Note: R
BIAS
provides DC bias stability over temperature.
Mounting Instructions
1. Solder the copper pad on the backside of the
device package to the ground plane.
2. Use a large ground pad area with many plated
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurement
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
L
C
C
D
C
B
C
B
Part Identification Marking
The part will be marked with an N6 designator on the
top surface of the package.
4
Pin #
1
Function
RF IN
Description
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible.
N6
1
2
3
2
2, 4
GND
3
For package dimensions, refer to outline drawing at
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