I2140 rev. A 12/99
QUIET
IR
Series
10ETF..S
FAST SOFT RECOVERY
RECTIFIER DIODE
V
F
t
rr
< 1.2V @ 10A
= 50ns
V
RRM
200 to 600V
Description/Features
The 10ETF..S fast soft recovery QUIET
IR
rectifier
series has been optimized for combined short
reverse recovery time and low forward voltage
drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and
power cycling conditions.
Typical applications are both:
output rectification and freewheeling in
inverters, choppers and converters
and input rectifications where severe
restrictions on conducted EMI should be met.
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal waveform
V
RRM
range
I
FSM
V
F
t
rr
T
J
@ 10 A, T
J
= 25°C
@ 1A, 100A/µs
range
Package Outline
Units
A
V
A
V
ns
°C
10ETF..S
10
200 to 600
150
1.2
50
- 40 to 150
D
2
Pak (SMD-220)
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1
10ETF..S QUIET
IR
Series
I2140 rev. A 12/99
Voltage Ratings
Part Number
V
RRM
, maximum
peak reverse voltage
V
200
400
600
V
RSM
, maximum non repetitive
peak reverse voltage
V
300
500
700
I
RRM
150°C
mA
2
10ETF02S
10ETF04S
10ETF06S
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
2
10ETF..S
10
150
160
112.5
160
Units
A
A
A
2
s
A
2
√s
Conditions
@ T
C
= 128° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
Max. Peak One Cycle Non-Repetitive
Surge Current
I t
Max. I t for fusing
2
I
2
√t
Max. I
2
√t
for fusing
1125
Electrical Specifications
Parameters
V
FM
r
t
Max. Forward Voltage Drop
Forward slope resistance
10ETF..S
1.2
12.7
1.25
0.1
2.0
Units
V
mΩ
V
mA
Conditions
@ 10A, T
J
= 25°C
T
J
= 150°C
V
F(TO)
Threshold voltage
I
RM
Max. Reverse Leakage Current
T
J
= 25 °C
T
J
= 150 °C
V
R
= rated V
RRM
Recovery Characteristics
Parameters
t
rr
I
rr
Q
rr
S
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
Snap Factor
10ETF..S
145
2.75
0.32
0.6
Units
ns
A
µC
Conditions
I
F
@ 10Apk
@ 25A/ µs
@ 25°C
2
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10ETF..S QUIET
IR
Series
I2140 rev. A 12/99
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
10ETF..S Units
- 40 to 150
- 40 to 150
1.5
40
240
2 (0.07)
°C
°C
°C/W
°C/W
°C
g (oz.)
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient (PCB Mount)**
T
s
wt
Soldering Temperature
Approximate Weight
Case Style
DC operation
D
2
Pak (SMD-220)
**When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
M a x im u m A llo w a ble C a se T e m p e ra t u re ( °C )
M a xim u m A llo w a b le C a se T e m p e ra tu re (° C )
150
1 0 E T F..S S e rie s
R
thJC
( D C ) = 1 .5 ° C /W
1 50
1 0 E T F..S S e r ie s
R
thJC
(D C ) = 1 .5 °C / W
145
140
1 45
1 40
Co ndu ctio n Ang le
Co ndu ction Perio d
135
30°
130
125
120
0
2
4
6
8
10
12
A v e ra g e Fo r w a rd C u rre n t ( A )
60°
90°
120°
180°
1 35
1 30
1 25
1 20
0
2
4
6
8
10
12
14
16
A v e ra g e Fo rw a rd C u rre n t ( A )
3 0°
6 0°
90°
120°
180°
DC
Fig. 1 - Current Rating Characteristics
M a xim u m A v e ra g e F o rw a rd P o w e r L o ss ( W )
M a xim u m A v e r a ge Fo rw a rd P o w e r Lo ss ( W )
16
14
12
10
8
6
C o nduc tio n Ang le
Fig. 2 - Current Rating Characteristics
20
DC
1 80 °
1 20 °
90 °
60 °
30 °
1 80 °
1 20 °
90°
60°
30°
R M S L im it
16
12
RM S L im it
8
Co ndu ctio n Pe rio d
4
2
0
0
2
4
6
8
10
A v e ra g e Fo rw a rd C u rre n t ( A )
1 0 E TF ..S S e rie s
T
J
= 1 5 0 °C
4
1 0 E T F..S Se rie s
T
J
= 1 5 0 °C
0
4
8
12
16
0
A v e ra g e Fo rw a rd C u rre n t ( A )
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
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10ETF..S QUIET
IR
Series
I2140 rev. A 12/99
Peak Half Sin e W av e Forward Curr ent (A)
A t A ny Ra te d L o ad C o n ditio n A nd W ith
R ate d V
RM
A pp lie d Fo llo w in g S urg e .
R
In itia l T
J
= 1 5 0°C
@ 6 0 H z 0 .0 0 83 s
@ 5 0 H z 0 .0 1 00 s
Peak Half Sine W ave Forward Current (A)
1 60
1 40
1 20
180
160
140
120
100
80
60
40
0.0 1
1 0 E TF..S Series
M axim um N o n Re p e titive Su rge C urre n t
Vers u s Pu lse Tr a in D ur atio n.
In itia l T
J
= 1 5 0 °C
N o V olta ge R ea p plied
R ated V
RR M
R ea p plied
1 00
80
60
40
1
10
100
N u m b er O f Equ a l A m p li tude Ha lf C y cle Cu r rent Pu ls es (N )
1 0 ETF..S Series
0.1
Pulse Train Du ration (s )
1
Fig. 5 - Maximum Non-Repetitive Surge Current
10 0
Instantaneous Forward Curr ent (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
10
T
J
= 2 5 °C
T
J
= 1 5 0 °C
1 0 E TF. .S Ser ies
1
0.5
1
1.5
2
2 .5
3
In stantan eous Forw ard Volt ag e (V )
Fig. 7 - Forward Voltage Drop Characteristics
M a xim u m R e v e rse R e c o v e ry T im e - T rr ( µ s)
Maxim um Reverse Recovery Time - Trr (µs)
0 .2
0.4
0 .1 5
I
FM
= 2 0 A
10 A
0.3
I
FM
= 2 0 A
0 .1
5A
2A
0.2
10 A
5 A
0 .0 5
1 0 ETF..S Ser ie s
T
J
= 25 ° C
0
0
40
80
120
1A
0.1
1 0 E TF..S Series
T
J
= 1 5 0 °C
0
0
40
80
1 20
2 A
1 A
160
200
160
200
R a t e O f Fa ll O f Fo r w a rd C u rre n t - d i/d t (A / µ s)
Rate Of Fall Of Forward Current - di/dt (A/ µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25°C
Fig. 9 - Recovery Time Characteristics, T
J
= 150°C
4
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10ETF..S QUIET
IR
Series
I2140 rev. A 12/99
M a xim u m R e v e rse R e c o v e ry C h a rg e - Q rr ( µC )
M a xim u m Re v e r se R e c o v e ry C h a rg e - Q rr ( µC )
1 .4
1 .2
1
0 .8
0 .6
0 .4
0 .2
1A
10 A
2 .5
1 0 E TF ..S Se rie s
T
J
= 1 5 0 ° C
I
FM
= 20 A
1 0 ETF..S Series
T
J
= 2 5 °C
I
FM
= 2 0 A
2
10 A
1 .5
5A
5 A
2 A
1
2 A
0 .5
1 A
0
0
40
80
12 0
16 0
200
R a t e O f Fa ll O f F o rw a rd C u rre n t - d i/d t ( A / µ s)
0
0
40
80
120
16 0
200
R a t e O f Fa ll O f F o rw a rd C u rre n t - d i/d t (A / µ s)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25°C
M a xim u m Re v e rse R e c o v e r y C u rr e n t - Irr ( A )
15
1 0 ETF..S Series
T
J
= 2 5 °C
I
FM
= 2 0 A
Fig. 11 - Recovery Charge Characteristics, T
J
= 150°C
Maxim um Reverse R ecovery Current - Ir r (A)
20
1 0E TF..S Ser ies
T
J
= 1 5 0 °C
I
FM
= 2 0 A
10 A
5A
2A
12
16
10 A
9
5A
2A
1 A
12
6
8
1A
3
4
0
0
40
80
1 20
160
200
Ra te O f F a ll O f Fo rw a rd C u rre n t - d i/ d t ( A / µ s)
0
0
40
80
1 20
160
200
Ra te O f Fall Of Forwa rd Curren t - di/dt (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25°C
Transient Thermal Impedan ce Z
thJC
(°C/W )
10
Fig. 13 - Recovery Current Characteristics, T
J
= 150°C
1
0.1
D
D
D
D
D
=
=
=
=
=
0 .5 0
0 .3 3
0 .2 5
0 .1 7
0 .0 8
Ste ad y Sta te V a lu e
(DC O p era tion )
Sin gle P ulse
0 .0 1
1 0 ETF..S Ser ies
0.00 1
0 .00 1
0.01
0.1
Square W ave Pulse Duration (s)
1
10
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
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