®
HCS374MS
Radiation Hardened Octal D-Type
Flip-Flop, Three-State, Positive Edge Triggered
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20
TOP VIEW
OE
Q0
D0
D1
Q1
Q2
D2
D3
Q3
1
2
3
4
5
6
7
8
9
20 VCC
19 Q7
18 D7
17 D6
16 Q6
15 Q5
14 D5
13 D4
12 Q4
11 CP
November 11, 2004
Features
•
•
•
•
•
•
•
•
•
•
•
•
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-
Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 0.3 VCC Max
- VIH = 0.7 VCC Min
Input Current Levels Ii
≤
5µA at VOL, VOH
GND 10
•
Description
The Intersil HCS374MS is a Radiation Hardened non-inverting
octal D-type, positive edge triggered flip-flop with three-stateable
outputs. The HCS374MS utilizes advanced CMOS/SOS technol-
ogy. The eight flip-flops enter data into their registers on the
LOW-to-HIGH transition of the clock (CP). Data is also
transferred to the outputs during this transition. The output
enable (OE) controls the three-state outputs and is independent
of the register operation. When the output enable is high, the out-
puts are in the high impedance state.
The HCS374MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS374MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20
TOP VIEW
OE
Q0
D0
D1
Q1
Q2
D2
D3
Q3
GND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
VCC
Q7
D7
D6
Q6
Q5
D5
D4
Q4
CP
Ordering Information
PART NUMBER
HCS374DMSR
HCS374KMSR
HCS374D/Sample
HCS374K/Sample
HCS374HMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
DB NA
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1995, 1999, 2004
Spec Number
File Number
1
518770
2470.3
HCS374MS
Functional Diagram
1 OF 8
(3, 4, 7, 8, 13, 14, 17, 18)
D
COMMON CONTROLS
CP
11
FF
D
Q
OE
Q
(2, 5, 6, 9, 12, 15, 16, 19)
CP
OE
1
TRUTH TABLE
INPUTS
OE
L
L
L
H
H =High Level (Steady State)
L =Low Level (Steady State)
X =Immaterial
Z =High Impedance
= Transition from Low to High Level
Q0 =The level of Q before the indicated input conditions were established
L
X
CP
Dn
H
L
X
X
OUTPUTS
Qn
H
L
Q0
Z
Spec Number
2
518770
Specifications HCS374MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input.
. . . . . . . . . . . . . . . . . . . . . . . . ±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . . ±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
SBDIP Package . . . . . . . . . . . . . . . . . . . .
72 C/W
24
o
C/W
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 107
28
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . 500ns Max.
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL) . . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
2, 3
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
7.2
6.0
-7.2
-6.0
-
MAX
40
750
-
-
-
-
0.1
UNITS
µA
µA
mA
mA
mA
mA
V
PARAMETER
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
VCC
-0.1
-
-
-
-
-
-
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
V
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
±0.5
±5.0
±1
±50
-
µA
µA
µA
µA
-
Three-State Output
Leakage Current
IOZ
Applied Voltage = 0V or
VCC, VCC = 5.5V
1
2, 3
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 2)
7, 8A, 8B
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
3
518770
Specifications HCS374MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
Enable to Output
TPZL,
TPZH
TPLZ
VCC = 4.5V
9
10, 11
Disable to Output
VCC = 4.5V
9
10, 11
TPHZ
VCC = 4.5V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
2
2
MAX
22
26
20
23
20
23
18
20
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
Clock to Q
SYMBOL
TPLH,
TPHL
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power Dissipation
SYMBOL
CPD
(NOTE 1)
CONDITIONS
VCC = 5.0V, f = 1MHz
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
+25
o
C
+125
o
C
Output Transition Time
TTHL
TTLH
VCC = 4.5V
+25
o
C
+125
o
C, -55
o
C
Max Operating Frequency
FMAX
VCC = 4.5V
+25
o
C
+125
o
C, -55
o
C
Setup Time Data to Clock
TSU
VCC = 4.5V
+25
o
C
+125
o
C, -55
o
C
Hold Time Data to Clock
TH
VCC = 4.5V
+25
o
C
+125
o
C, -55
o
C
Pulse Width Clock
TW
VCC = 4.5V
+25
o
C
+125
o
C, -55
o
C
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
MIN
-
-
-
-
-
-
-
-
12
18
5
5
16
24
MAX
11
35
10
10
12
18
30
20
-
-
-
-
-
-
UNITS
pF
pF
pF
pF
ns
ns
MHz
MHz
ns
ns
ns
ns
ns
ns
Spec Number
4
518770
Specifications HCS374MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETER
Quiescent Current
Output Current (Sink)
SYMBOL
ICC
IOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOL = 50µA
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOH = -50µA
VCC = 5.5V, VIN = VCC or GND
Applied Voltage = 0V or VCC, VCC = 5.5V
TEMPERATURE
+25
o
C
+25
o
C
MIN
-
6.0
MAX
0.75
-
UNITS
mA
mA
Output Current
(Source)
Output Voltage Low
IOH
+25
o
C
-6.0
-
mA
VOL
+25
o
C
-
0.1
V
Output Voltage High
VOH
+25
o
C
VCC
-0.1
-
-
-
V
Input Leakage Current
Three-State Output
Leakage Current
Noise Immunity
Functional Test
Clock to Q
IIN
IOZ
+25
o
C
+25
o
C
±5
±50
µA
µA
FN
VCC = 4.5V, VIH = 0.70(VCC),
VIL =0.30(VCC), (Note 3)
VCC = 4.5V
+25
o
C
-
-
-
TPLH,
TPHL
TPZL,
TPZH
TPLZ
TPHZ
+25
o
C
2
26
ns
Enable to Output
VCC = 4.5V
+25
o
C
2
23
Disable to Output
VCC = 4.5V
VCC = 4.5V
+25
o
C
+25
o
C
2
2
23
20
ns
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
5
PARAMETER
ICC
IOL/IOH
IOZL/IOZH
DELTA LIMIT
12µA
-15% of 0 Hour
±200nA
Spec Number
5
518770
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