Maximum Junction Temperature (Plastic Packages). . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be connected to
the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2.
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
PARAMETER
DC CHARACTERISTICS
(For Each Transistor)
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Substrate Breakdown-Voltage
Emitter-to-Base Breakdown Voltage (Note 3)
Collector-Cutoff-Current
Collector-Cutoff-Current
DC Forward-Current Transfer Ratio
I
C
= 10A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
C1
= 10A, I
B
= 0, I
E
= 0
I
E
= 10A, I
C
= 0
V
CE
= 10V I
B
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 6V
I
C
= 5mA
I
C
= 1mA
I
C
= 0.1mA
Base-to-Emitter Voltage
V
CE
= 6V
I
C
= 5mA
I
C
= 1mA
I
C
= 0.1mA
Collector-to-Emitter Saturation Voltage
Magnitude of Difference in V
BE
Magnitude of Difference in I
B
DYNAMIC CHARACTERISTICS
Noise Figure
Gain-Bandwidth Product
Collector-to-Base Capacitance
Collector-to-Substrate Capacitance
Emitter-to-Base Capacitance
Voltage Gain
Power Gain
Noise Figure
f = 100kHz, R
S
= 500, I
C
= 1mA
V
CE
= 6V, I
C
= 5mA
V
CB
= 6V, f = 1MHz
V
CI
= 6V, f = 1MHz
V
BE
= 4V, f = 1MHz
V
CE
= 6V, f = 10MHz, R
L
= 1k, I
C
= 1mA
Cascode Configuration
f = 100MHz, V+ = 12V, I
C
= 1mA
-
-
-
-
-
-
27
-
28
30
3.5
2.2
1.15
See Fig.
5
-
-
-
-
-
-
-
-
dB
GHz
pF
pF
pF
dB
dB
dB
I
C
= 10mA, I
B
= 1mA
Q
1
and Q
2
Matched
V
CE
= 6V, I
C
= 1mA
20
15
20
4
-
-
35
40
35
0.71
0.66
0.60
-
-
-
32
24
60
5.7
-
-
88
90
85
0.81
0.76
0.70
0.26
0.5
0.2
-
-
-
-
0.5
40
-
-
-
0.91
0.86
0.80
0.50
5
3
V
V
V
V
mV
A
V
V
V
V
A
nA
T
A
= 25°C
TEST CONDITIONS
MIN
TYP
MAX
UNITS
FN662 Rev.5.00
Jun 5, 2006
Page 2 of 9
CA3127
Electrical Specifications
PARAMETER
Input Resistance
Output Resistance
Input Capacitance
Output Capacitance
Magnitude of Forward Transadmittance
NOTE:
3. When used as a zener for reference voltage, the device must not be subjected to more than 0.1mJ of energy from any possible capacitance or
electrostatic discharge in order to prevent degradation of the junction. Maximum operating zener current should be less than 10mA.
T
A
= 25°C
TEST CONDITIONS
Common-Emitter Configuration
V
CE
= 6V, I
C
= 1mA, f = 200 MHz
MIN
-
-
-
-
-
TYP
400
4.6
3.7
2
24
MAX
-
-
-
-
-
UNITS
k
pF
pF
mS
Test Circuits
V+
10k
BIAS-CURRENT
ADJ
470
pF
R
L
2
0.01
F
1F
6
51
0.01F
V
O
4
Q
2
3
8
1F
0.01
F
470pF
Q
3
7
470pF
V
I
GEN
FIGURE 1. VOLTAGE-GAIN TEST CIRCUIT USING CURRENT-MIRROR BIASING FOR Q
2
1.5 - 8pF
C
2
(NOTE 5)
14
620
1000
pF
1000
pF
TEST
POINT
V
O
8.2
k
0.47H
12
SHIELD
Q
5
V
I
2
1000pF
0.3H
4
1.8pF
C
1
(NOTE 5)
3
Q
2
13
560
750
1%
1000
pF
+12V
NOTES:
4. This circuit was chosen because it conveniently
represents a close approximation in performance to a
properly unilateralized single transistor of this type. The
use of Q
3
in a current-mirror configuration facilitates
simplified biasing. The use of the cascode circuit in no
way implies that the transistors cannot be used
individually.
5. E.F. Johnson number 160-104-1 or equivalent.
OHMITE
Z144
8
1000
pF
6
Q
3
7
5
25k
FIGURE 2. 100MHz POWER-GAIN AND NOISE-FIGURE TEST CIRCUIT
FN662 Rev.5.00
Jun 5, 2006
Page 3 of 9
CA3127
GENERAL RADIO 1021-P1
100MHz GENERATOR
ATTN
100MHz
TEST SET
BOONTON 91C
RF VOLTMETER
12V
DC
POWER SUPPLY
FIGURE 3A. POWER GAIN SET-UP
VHF NOISE SOURCE
HEWLETT PACKARD HP343A
100MHz
TEST SET
100MHz
POST AMPLIFIER
NOISE FIGURE METER
HEWLETT PACKARD HP342A
12V
DC
POWER SUPPLY
15V
DC
POWER SUPPLY
FIGURE 3B. NOISE FIGURE SET-UP
FIGURE 3. BLOCK DIAGRAMS OF POWER-GAIN AND NOISE-FIGURE TEST SET-UPS
Typical Performance Curves
T
A
= 25°C
V
CE
= 6V
R
SOURCE
= 500
f = 10Hz
30
T
A
= 25°C
V
CE
= 6V
R
SOURCE
= 1k
f = 10Hz
f = 100Hz
30
NOISE FIGURE (dB)
20
NOISE FIGURE (dB)
f = 100Hz
20
f = 10kHz
10
f = 1kHz
f = 1kHz
10
f = 10kHz
f = 100kHz
f = 100kHz
0
0.01
0.1
1.0
COLLECTOR CURRENT (mA)
0
0.01
0.1
1.0
COLLECTOR CURRENT (mA)
FIGURE 4. NOISE FIGURE vs COLLECTOR CURRENT
FIGURE 5. NOISE FIGURE vs COLLECTOR CURRENT
FN662 Rev.5.00
Jun 5, 2006
Page 4 of 9
CA3127
Typical Performance Curves
(Continued)
BASE-TO-EMITTER VOLTAGE (V)
T
A
= 25°C
V
CE
= 6V
GAIN-BANDWIDTH PRODUCT (GHz)
1.0
T
A
= -55°C
0.9
0.8
0.7
T
A
= 125°C
0.6
0.5
0.4
T
A
= 25°C
1.2
1.1
1.0
0.9
0.8
0
1
2
3
4
5
6
7
8
9
10
0.1
COLLECTOR CURRENT (mA)
1
COLLECTOR CURRENT (mA)
10
FIGURE 6. GAIN-BANDWIDTH PRODUCT vs COLLECTOR
CURRENT
FIGURE 7. BASE-TO-EMITTER VOLTAGE vs COLLECTOR
CURRENT
T
A
= 25°C
f = 1MHz
2.25
2.00
CAPACITANCE (pF)
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
1
2
3
4
5
C
EB
C
CB
6
7
8
9
10
C
CI
CAPACITANCE (pF)
C
CB
TRAN-
SISTOR
C
CE
C
EB
C
CI
PKG TOTAL PKG TOTAL PKG TOTAL PKG TOTAL
-
6V
-
6V
-
4V
-
6V
BIAS
(V)
Q
1
Q
2
Q
3
Q
4
Q
5
BIAS VOLTAGE (V)
0.025 0.190 0.090 0.125 0.365 0.610 0.475 1.65
0.015 0.170 0.225 0.265 0.130 0.360 0.085 1.35
0.040 0.200 0.215 0.240 0.360 0.625 0.210 1.40
0.040 0.190 0.225 0.270 0.365 0.610 0.085 1.25
0.010 0.165 0.095 0.115 0.140 0.365 0.090 1.35
FIGURE 8A. CAPACITANCE vs BIAS VOLTAGE FOR Q
2
FIGURE 8B. TYPICAL CAPACITANCE VALUES AT f = 1MHz.
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