CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
PARAMETER
T
A
= 25
o
C; Characteristics apply for each diode unit, Unless Otherwise Specified
SYMBOL
V
F
TEST CONDITIONS
I
F
= 50µA
I
F
= 1mA
I
F
= 3mA
I
F
= 10mA
MIN
-
-
-
-
5
20
TYP
0.65
0.73
0.76
0.81
7
-
MAX
0.69
0.78
0.80
0.90
-
-
UNITS
V
V
V
V
V
V
DC Forward Voltage Drop (Figure 1)
DC Reverse Breakdown Voltage
DC Reverse Breakdown Voltage Between Any
Diode Unit and Substrate
DC Reverse (Leakage) Current (Figure 2)
DC Reverse (Leakage) Current Between Any
Diode Unit and Substrate (Figure 3)
Magnitude of Diode Offset Voltage (Note 2)
(Figure 1)
Temperature Coefficient of |V
F1
- V
F2
| (Figure 4)
V
(BR)R
V
(BR)R
I
R
I
R
V
F1
–
V
F2
I
R
= -10µA
I
R
= -10µA
V
R
= -4V
V
R
= -10V
I
F
= 1mA
I
F
= 1mA
-
-
0.016
0.022
100
100
nA
nA
-
0.5
5.0
mV
µV/
o
C
∆
V
F1
–
V
F2
---------------------------------
-
∆T
∆V
F
----------
-
∆T
V
F
tRR
R
D
C
D
C
DI
-
1.0
-
Temperature Coefficient of Forward Drop
(Figure 5)
I
F
= 1mA
-
-1.9
-
mV/
o
C
DC Forward Voltage Drop for Anode-to-
Substrate Diode (D
S
)
Reverse Recovery Time
Diode Resistance (Figure 6)
Diode Capacitance (Figure 7)
Diode-to-Substrate Capacitance (Figure 8)
NOTE:
I
F
= 1mA
I
F
= 10mA, I
R
= -10mA
f = 1kHz, I
F
= 1mA
V
R
= -2V, I
F
= 0
V
DI
= 4V, I
F
= 0
-
0.65
-
V
-
25
-
-
1.0
30
0.65
3.2
-
45
-
-
ns
Ω
pF
pF
2. Magnitude of Diode Offset Voltage is the difference in DC Forward Voltage Drops of any two diode units.
2
CA3039
Typical Performance Curves
T
A
= 25
o
C
0.8
DC FORWARD VOLTAGE (V)
6
DIODE OFFSET VOLTAGE (mV)
DC REVERSE CURRENT (nA)
5
4
3
0.6
DIODE OFFSET
(
VF1
–
V F2
)
0.5
0.01
2
1
0
1
10
V
R
= -4V
FORWARD VOLTAGE DROP (V
F
)
0.7
0.1
0.01
0.1
1
DC FORWARD CURRENT (mA)
10
0.001
-75
-50
-25
0
25
50
75
100
125
TEMPERATURE (
o
C)
FIGURE 1. DC FORWARD VOLTAGE DROP (ANY DIODE) AND
DIODE OFFSET VOLTAGE vs DC FORWARD
CURRENT
FIGURE 2. DC REVERSE (LEAKAGE) CURRENT (D
1
- D
5
) vs
TEMPERATURE
100
DIODE OFFSET VOLTAGE
(
V F1
–
V F2
)
(mV)
V
R
= -10V
4
I
F
= 10mA
3
2
0.7
0.6
I
F
= 1mA
0.5
0.4
0.3
-75
I
F
= 0.1mA
DC REVERSE CURRENT (nA)
10
1
0.1
0.01
0.001
-75
-50
-25
0
25
50
o
C)
TEMPERATURE (
75
100
125
-50
-25
0
25
50
TEMPERATURE (
o
C)
75
100
125
FIGURE 3. DC REVERSE (LEAKAGE) CURRENT BETWEEN D
1
,
D
2
, D
3
, D
4
, D
5
AND SUBSTRATE vs TEMPERATURE
FIGURE 4. DIODE OFFSET VOLTAGE (ANY DIODE) vs
TEMPERATURE
3
CA3039
Typical Performance Curves
I
F
= 1mA
0.9
DC FORWARD VOLTAGE (V)
DIODE RESISTANCE (Ω)
(Continued)
1000
T
A
= 25
o
C
f = 1kHz
0.8
100
0.7
0.6
10
0.5
1
0.01
0.4
-75
-50
-25
0
25
50
75
100
125
TEMPERATURE (
o
C)
0.1
1
10
DC FORWARD CURRENT (mA)
FIGURE 5. DC FORWARD VOLTAGE DROP (ANY DIODE) vs
TEMPERATURE
FIGURE 6. DIODE RESISTANCE (ANY DIODE) vs DC
FORWARD CURRENT
DIODE TO SUBSTRATE CAPACITANCE (pF)
6
DIODE CAPACITANCE (pF)
T
A
= 25
o
C
I
F
= 0
6
5
4
3
2
1
0
0
5
T
A
= 25
o
C
I
F
= 0
4
3
2
1
1
2
3
4
0
1
2
3
4
DC REVERSE VOLTAGE ACROSS DIODE (V)
DC REVERSE VOLTAGE BETWEEN TERMINALS 1, 4, 5, 8, OR 12
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
