CEP51A3/CEB51A3
Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
c
Tc = 25 C unless otherwise noted
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
V
GS
= 0V, I
S
= 40A
V
DS
= 24V, I
D
=40A,
V
GS
= 5V
V
DD
=15V, I
D
=20A,
V
GS
= 4.5V, R
GEN
=4.7Ω
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10 V, I
D
= 20A
V
GS
= 4.5V, I
D
= 20A
V
DS
= 10 V, I
D
= 20A
1
13.5
20
26
1340
232
82
16
4.4
31
4.5
13
4
4
48
1.3
40
13
62
14
23
Min
30
1
100
-100
3
16.5
28
Typ
Max
Units
V
µA
4
nA
nA
V
m
Ω
m
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
V
DS
= 25V , V
GS
= 0V,
f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
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