CEP655N/CEB655N
CEI655N/CEF655N
Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
c
Tc = 25 C unless otherwise noted
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
f
V
SD
V
GS
= 0V, I
S
= 15A
g
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 150V, V
GS
= 0V
V
GS
= 25V, V
DS
= 0V
V
GS
= -25V, V
DS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V, I
D
= 8.2A
V
DS
= 40V, I
D
= 8.2A
Min
150
Typ
Max
Units
V
4
1
100
-100
2
118
5
750
175
70
17
35
100
80
90
34
4
153
µA
nA
nA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
= 25V, V
GS
= 0V,
f = 1.0 MHz
V
DD
= 75V, I
D
= 15A,
V
GS
= 10V, R
GEN
= 25Ω
48
40
46
26
6
12.5
V
DS
= 120V, I
D
= 15A,
V
GS
= 10V
Drain-Source Diode Characteristics and Maximun Ratings
15
1.5
A
V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e .Pulse width limited by safe operating area .
f .Full package I
S(max)
= 10A .
g.Full package V
SD
test condition I
S
= 10A .
2