H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
April 2006
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M
AC Input/Phototransistor Optocouplers
Features
■
Bi-polar emitter input
■
Built-in reverse polarity input protection
■
Underwriters Laboratory (UL) recognized File
Description
The H11AAX-M series consists of two gallium-arsenide
infrared emitting diodes connected in inverse parallel
driving a single silicon phototransistor output.
#E90700, Volume 2
■
VDE approved File #102497 (ordering option ‘V’)
Applications
■
AC line monitor
■
Unknown polarity DC sensor
■
Telephone line interface
Package and Schematic
1
6 BASE
2
5 COLL
3
4 EMITTER
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
H11AAX-M Rev. 1.0.0
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
Absolute Maximum Ratings
(T
A
=25°C Unless otherwise specified)
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
I
F
(pk)
P
D
DETECTOR
I
C
P
D
Continuous Collector Current
Detector Power Dissipation
Derate linearity from 25°C
All
All
50
150
1.76
mA
mW
mW/°C
Continuous Forward Current
Forward Current – Peak (1µs pulse, 300 pps)
LED Power Dissipation
Derate Linearly From 25°C
All
All
All
60
±1.0
120
1.41
mA
A
mW
mW/°C
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation
Derate Linearly From 25°C
All
All
All
All
-40 to +150
-40 to +100
260 for 10 sec
250
2.94
°C
°C
°C
mW
mW/°C
Parameter
Device
Value
Units
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
EMITTER
V
F
C
J
Input Forward Voltage
Capacitance
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Base
Emitter to Collector
Leakage Current
Collector to Emitter
Capacitance Collector
to Emitter
Collector to Base
Emitter to Base
I
F
= ±10mA
V
F
= 0 V, f = 1.0MHz
All
All
1.17
80
1.5
V
pF
Parameter
Test Conditions
Device
Min.
Typ.*
Max.
Unit
DETECTOR
BV
CEO
BV
CBO
BV
EBO
BV
ECO
I
CEO
C
CE
C
CB
C
EB
I
C
= 1.0mA, I
F
= 0
I
C
= 100µA, I
F
= 0
I
E
= 100µA, I
F
= 0
I
E
= 100µA, I
F
= 0
V
CE
= 10 V, I
F
= 0
V
CE
= 0, f = 1MHz
V
CB
= 0, f = 1MHz
V
EB
= 0, f = 1MHz
All
All
All
All
H11AA1,3,4(-M)
H11AA2-M
All
All
All
30
70
5
7
100
120
10
10
1
1
10
80
15
50
200
pF
pF
pF
V
V
V
V
nA
*Typical values at T
A
= 25°C
2
H11AAX-M Rev. 1.0.0
www.fairchildsemi.com
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
Symbol
CTR
CE
Characteristics
Current Transfer Ratio,
Collector to Emitter
Test Conditions
I
F
= ±10mA, V
CE
= 10V
Device
H11AA4-M
H11AA3-M
H11AA1-M
H11AA2-M
Min.
100
50
20
10
.33
Typ.*
Max.
Units
%
Current Transfer Ratio,
Symmetry
V
CE(SAT)
Saturation Voltage,
Collector to Emitter
I
F
= ±10mA, V
CE
= 10V
(Figure 11)
I
F
= ±10mA, I
CE
= 0.5mA
All
All
3.0
.40
V
Isolation Characteristics
Symbol
C
I-O
V
ISO
R
ISO
Characteristic
Package Capacitance
Input/Output
Isolation Voltage
Isolation Resistance
Test Conditions
V
I-O
= 0, f = 1MHz
f = 60 Hz, t = 1 sec.
V
I-O
= 500 VDC
Min.
Typ.*
0.7
Max.
Units
pF
Vac(pk)
Ω
7500
10
11
*Typical values at T
A
= 25°C
3
H11AAX-M Rev. 1.0.0
www.fairchildsemi.com
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
Typical Performance Characteristics
Fig. 1 Input Voltage vs. Input Current
100
T
A
= 25°C
80
1.2
1.4
T
A
= 25°C
V
CE
= 5V
Normalized to I
F
= 10mA
Fig. 2 Normalized CTR vs. Forward Current
I
F
- INPUT CURRENT (mA)
60
40
20
0
-20
-40
-60
0.2
1.0
NORMALIZED CTR
0.8
0.6
0.4
-80
-100
-2.0
0.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
0
5
10
15
20
V
F
- INPUT VOLTAGE (V)
I
F
- FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
V
CE
= 5V
Normalized to I
F
= 10mA, T
A
= 25°C
1.2
I
F
= 10mA
Fig. 4 CTR vs. RBE (Unsaturated)
1.0
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
V
0.9
0.8
0.7
CE
= 5V
T
A
= 25°C
NORMALIZED CTR
1.0
I
F
= 5mA
0.8
I
F
= 20mA
0.6
I
F
= 20mA
0.6
I
F
= 10mA
0.5
I
F
= 5mA
0.4
0.3
0.2
0.1
0.0
10
100
1000
0.4
0.2
-60
-40
-20
0
20
40
60
80
100
T
A
- AMBIENT TEMPERATURE (°C)
R
BE
- BASE RESISTANCE (kΩ)
Fig. 5 CTR vs. RBE (Saturated)
1.0
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
V
CE (SAT)
- COLLECTOR-EMITTER SATURATION VOLTAGE (V)
100
T = 25°C
A
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
V
0.9
0.8
0.7
CE
= 0.3V
T
A
= 25°C
10
I
F
= 20mA
0.6
I
F
= 10mA
0.5
I
F
= 5mA
0.4
0.3
0.2
0.1
0.0
10
100
1000
1
I
F
= 2.5mA
I
F
= 5mA
0.1
0.01
I
F
= 10mA
I
F
= 20mA
R
BE
- BASE RESISTANCE (k
Ω)
0.001
0.01
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
4
H11AAX-M Rev. 1.0.0
www.fairchildsemi.com
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
Typical Performance Characteristics
(Continued)
Fig. 7 Switching Speed vs. Load Resistor
1000
I
F
= 10mA
V
CC
= 10V
T = 25°C
A
Fig. 8 Normalized t
on
vs. R
BE
7
V
CC
= 10V
I
C
= 2mA
R
L
= 100Ω
T = 25°C
A
100
NORMALIZED t
on
- (t
on(R
BE
)
/ t
on(open)
)
6
SWITCHING SPEED - (µs)
5
T
off
10
T
f
4
3
T
on
1
T
r
2
1
0.1
0.1
1
10
100
0
10
100
1000
10000
100000
R-LOAD RESISTOR (kΩ)
R
BE
- BASE RESISTANCE (k
Ω)
Fig. 9 Normalized t
off
vs. R
BE
3.0
10000
Fig. 10 Dark Current vs. Ambient Temperature
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
NORMALIZED t
off
- (t
off(R
BE
)
/ t
off(open)
)
2.5
V
CC
= 10V
I
C
= 2mA
R
L
= 100Ω
T = 25°C
A
1000
2.0
100
1.5
10
V
CE
= 30V
V
CE
= 10V
1.0
1
0.5
0.0
10
100
1000
10000
100000
0.1
0
20
40
60
80
100
R
BE
- BASE RESISTANCE (kΩ)
T
A
- AMBIENT TEMPERATURE (°C)
Fig. 11 Output Symmetry Characteristics
10
5
NORMALIZED OUTPUT CURRENT
I
F
=
1
.5
I
F
=
I
- 10mA
I
I
10mA
I
.1
.05
NORMALIZED TO:
V
CE
= 10 V
I
F
= 10 mA
THE MAXIMUM PEAK
OUTPUT CURRENT
WILL BE NO MORE
THAN THREE TIMES
THE MINIMUM PEAK
OUTPUT CURRENT AT
I
F
=
±10
mA
.05
.1
.5
1
5
10
.01
.005
.01
V
CE
- COLLECTOR TO EMITTER VOLTAGE (V)
5
H11AAX-M Rev. 1.0.0
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