512KX8 MASK PROM, 170ns, PDIP32, PLASTIC, DIP-32
| 参数名称 | 属性值 |
| 厂商名称 | Renesas(瑞萨电子) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, |
| 针数 | 32 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 最长访问时间 | 170 ns |
| JESD-30 代码 | R-PDIP-T32 |
| 长度 | 41.9 mm |
| 内存密度 | 4194304 bit |
| 内存集成电路类型 | MASK ROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 32 |
| 字数 | 524288 words |
| 字数代码 | 512000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 512KX8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 认证状态 | Not Qualified |
| 座面最大高度 | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 15.24 mm |
| Base Number Matches | 1 |
| HN62314BP-17 | HN62314BF-20 | HN62314BTT-20 | HN62314BTT-17 | HN62314BP-20 | HN62314BF-17 | |
|---|---|---|---|---|---|---|
| 描述 | 512KX8 MASK PROM, 170ns, PDIP32, PLASTIC, DIP-32 | 512KX8 MASK PROM, 200ns, PDSO32, PLASTIC, SOP-32 | 512KX8 MASK PROM, 200ns, PDSO32, PLASTIC, TSOP2-32 | 512KX8 MASK PROM, 170ns, PDSO32, PLASTIC, TSOP2-32 | 512KX8 MASK PROM, 200ns, PDIP32, PLASTIC, DIP-32 | 512KX8 MASK PROM, 170ns, PDSO32, PLASTIC, SOP-32 |
| 厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
| 零件包装代码 | DIP | SOIC | TSOP2 | TSOP2 | DIP | SOIC |
| 包装说明 | DIP, | SOP, | TSOP2, | TSOP2, | DIP, | SOP, |
| 针数 | 32 | 32 | 32 | 32 | 32 | 32 |
| Reach Compliance Code | compliant | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 170 ns | 200 ns | 200 ns | 170 ns | 200 ns | 170 ns |
| JESD-30 代码 | R-PDIP-T32 | R-PDSO-G32 | R-PDSO-G32 | R-PDSO-G32 | R-PDIP-T32 | R-PDSO-G32 |
| 长度 | 41.9 mm | 20.45 mm | 20.95 mm | 20.95 mm | 41.9 mm | 20.45 mm |
| 内存密度 | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit |
| 内存集成电路类型 | MASK ROM | MASK ROM | MASK ROM | MASK ROM | MASK ROM | MASK ROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 32 | 32 | 32 | 32 | 32 | 32 |
| 字数 | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words |
| 字数代码 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | SOP | TSOP2 | TSOP2 | DIP | SOP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | IN-LINE | SMALL OUTLINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 5.08 mm | 3.05 mm | 1.2 mm | 1.2 mm | 5.08 mm | 3.05 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | YES | YES | NO | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | THROUGH-HOLE | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | GULL WING |
| 端子节距 | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
| 宽度 | 15.24 mm | - | 10.16 mm | 10.16 mm | 15.24 mm | - |
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