These transistors are housed in an ultra−small SOT563 package
ideally suited for portable products. They are assembled to create a
pair of devices highly matched in all parameters, eliminating the need
for costly trimming. Applications are Current Mirrors; Differential,
Sense and Balanced Amplifiers; Mixers; Detectors and Limiters.
Features
http://onsemi.com
Current Gain Matching to 10%
Base−Emitter Voltage Matched to 2 mV
Drop−In Replacement for Standard Device
AEC−Q101 Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
−
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−30
−30
−5.0
−100
Unit
V
V
V
mAdc
SOT−563
CASE 463A
PLASTIC
(3)
(2)
(1)
Q
1
Q
2
(4)
(5)
(6)
MARKING DIAGRAMS
UU M
G
G
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
UU = Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NST30010MXV6T1G
NSVT30010MXV6T1G
Package
SOT−563
(Pb−Free)
Shipping
†
4,000 /
Tape & Reel
SOT−563
4,000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 1
1
Publication Order Number:
NST30010MXV6/D
NST30010MXV6T1G, NSVT30010MXV6T1G
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
T
A
= 25C (Note 1)
Derate above 25C (Note 1)
T
A
= 25C (Note 2)
Derate above 25C (Note 2)
Thermal Resistance
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
Thermal Resistance
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
Thermal Resistance
Junction-to-Lead (Note 1)
Junction-to-Lead (Note 2)
Thermal Resistance
Junction-to-Lead (Note 1)
Junction-to-Lead (Note 2)
Junction and Storage
Temperature Range
Parameter
Two Devices Heated Total Package
Symbol
P
D
One Device
Heated
357
2.9
429
3.4
350
291
149
88
128
152
224
222
−55
to +150
Both Devices
Heated
500 (250 ea)
4.0
661 (331 ea)
5.3
250
189
−
−
76
85
−
−
Unit
mW
mW/C
mW
mW/C
C/W
One Heated Device
R
qJA
Unheated Device Heated by
Heated Device
Lead Attached to Heated Device
Y
JA
C/W
Y
JL
C/W
Heated Device Heating Lead
Attached to Unheated Device
Y
JL
C/W
T
J
, T
stg
C
1. PCB with 51 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB
76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51.
2. PCB with 250 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB
76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51.
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage, (I
C
=
−10
mA)
Collector
−Emitter
Breakdown Voltage, (I
C
=
−10
mA,
V
EB
= 0)
Collector
−Base
Breakdown Voltage, (I
C
=
−10
mA)
Emitter
−Base
Breakdown Voltage, (I
E
=
−1.0
mA)
Collector Cutoff Current (V
CB
=
−30
V)
Collector Cutoff Current
(V
CB
=
−30
V, T
A
= 150C)
ON CHARACTERISTICS
DC Current Gain
(I
C
=
−10
mA,
V
CE
=
−5.0
V)
(I
C
=
−2.0
mA, V
CE
=
−5.0
V)
(I
C
=
−2.0
mA, V
CE
=
−5.0
V) (Note 3)
Collector
−Emitter
Saturation Voltage
(I
C
=
−10
mA, I
B
=
−0.5
mA)
(I
C
=
−100
mA, I
B
=
−5.0
mA)
Base
−Emitter
Saturation Voltage
(I
C
=
−10
mA, I
B
=
−1.0
mA)
(I
C
=
−100
mA, I
B
=
−10
mA)
Base
−Emitter
On Voltage
(I
C
=
−2.0
mA, V
CE
=
−5.0
V)
(I
C
=
−10
mA, V
CE
=
−5.0
V)
(I
C
=
−2.0
mA, V
CE
=
−5.0
V) (Note 4)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product, (I
C
=
−10
mA, V
CE
=
−5
Vdc, f = 100 MHz)
Output Capacitance, (V
CB
=
−10
V, f = 1.0 MHz)
Noise Figure, (I
C
=
−0.2
mA, V
CE
=
−5
Vdc, R
S
= 2 kW, f = 1 kHz, BW = 200Hz)
f
T
C
ob
NF
100
−
−
−
−
−
−
4.5
10
MHz
pF
dB
h
FE
h
FE(1)/
h
FE(2)
V
CE(sat)
270
420
0.9
−
−
−
−
−0.60
−
−
−
520
1.0
−
−
−0.75
−0.90
−
−
1.0
−
800
−
−0.30
−0.60
−
−
−0.75
−0.82
2.0
−
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
−30
−30
−30
−5.0
−
−
−
−
−
−
−
−
−
−
−
−
−15
−4.0
V
V
V
V
nA
mA
Symbol
Min
Typ
Max
Unit
V
V
BE(sat)
V
V
BE(on)
V
BE(1)
−
V
BE(2)
V
mV
3. h
FE(1)
/h
FE(2)
is the ratio of one transistor compared to the other transistor within the same package. The smaller h
FE
is used as numerator.
4. V
BE(1)
−
V
BE(2)
is the absolute difference of one transistor compared to the other transistor within the same package.
http://onsemi.com
2
NST30010MXV6T1G, NSVT30010MXV6T1G
TYPICAL CHARACTERISTICS
0.25
V
CE(sat)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
V
CE(sat)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
0.20
150C
0.15
25C
0.10
0.05
0
−55C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
−55C
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
25C
I
C
/I
B
= 100
150C
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
1400
V
BE(sat)
, BASE EMITTER
SATURATION VOLTAGE (V)
1200
h
FE
, DC CURRENT GAIN
1000
150C (5.0 V)
1.2
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
/I
B
= 10
1.0
0.8
25C
0.6
150C
0.4
0.2
0
0.1
−55C
800 150C (2.0 V)
600
400
200
0
0.1
25C (5.0 V)
25C (2.0 V)
−55C
(5.0 V)
−55C
(2.0 V)
1.0
10
100
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain vs. Collector
Current
1.0
V
BE(on)
, BASE EMITTER TURN−ON
VOLTAGE (V)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
1.0
10
V
CE
=
−5.0
V
100
0
150C
−55C
25C
V
CE
, COLLECTOR−EMITTER
VOLTAGE (V)
0.9
3.0
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
50 mA
2.5
2.0
20 mA
1.5
1.0
0.5
0.01
0.1
1.0
10
100
10 mA
I
C
= 100 mA
I
C
, COLLECTOR CURRENT (mA)
I
B
, BASE CURRENT (mA)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region @ 255C
http://onsemi.com
3
NST30010MXV6T1G, NSVT30010MXV6T1G
TYPICAL CHARACTERISTICS
14
C
obo
, OUTPUT CAPACITANCE (pF)
C
ibo
, INPUT CAPACITANCE (pF)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
C
ibo
(pF)
7
6
5
4
3
2
1
0
0
5
10
15
20
25
C
obo
(pF)
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
http://onsemi.com
4
NST30010MXV6T1G, NSVT30010MXV6T1G
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
D
−X−
6
5
4
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
DIM
A
b
C
D
E
e
L
H
E
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
1
2
3
E
−Y−
b
H
E
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
e
5
6 PL
M
C
X Y
0.08 (0.003)
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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