NSBC114EPDXV6T1,
NSBC114EPDXV6T5
Preferred Devices
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EPDXV6T1
series, two complementary BRT devices are housed in the SOT−563
package which is ideal for low power surface mount applications
where board space is at a premium.
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(3)
R
1
Q
1
Q
2
R
2
(4)
R
1
(5)
(6)
(2)
R
2
(1)
•
•
•
•
•
6
54
23
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch Tape and Reel
Lead Free Solder Plating
1
SOT−563
CASE 463A
PLASTIC
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, − minus sign for Q
1
(PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
MARKING DIAGRAM
xx D
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
Derate above 25°C
Thermal Resistance Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
Derate above 25°C
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature
1. FR−4 @ Minimum Pad
R
qJA
T
J
, T
stg
T
A
= 25°C
R
qJA
T
A
= 25°C
Symbol
P
D
Max
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
−55 to
+150
Unit
mW
mW/°C
°C/W
xx = Specific Device Code
(see table on page 2)
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping
4 mm pitch
4000/Tape & Reel
2 mm pitch
8000/Tape & Reel
NSBC114EPDXV6T1 SOT−563
NSBC114EPDXV6T5 SOT−563
Unit
mW
Symbol
P
D
DEVICE MARKING INFORMATION
mW/°C
°C/W
°C
Preferred
devices are recommended choices for future use
and best overall value.
See specific marking information in the device marking table
on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2004
1
January, 2004 − Rev. 3
Publication Order Number:
NSBC114EPDXV6/D
NSBC114EPDXV6T1, NSBC114EPDXV6T5
DEVICE MARKING AND RESISTOR VALUES
Device
NSBC114EPDXV6T1
NSBC124EPDXV6T1
NSBC144EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1 (Note 2)
NSBC143TPDXV6T1 (Note 2)
NSBC113EPDXV6T1 (Note 2)
NSBC123EPDXV6T1 (Note 2)
NSBC143EPDXV6T1 (Note 2)
NSBC143ZPDXV6T1 (Note 2)
NSBC124XPDXV6T1 (Note 2)
NSBC123JPDXV6T1 (Note 2)
Package
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
Marking
11
12
13
14
15
16
30
31
32
33
34
35
R1 (kW)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
R2 (kW)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, − minus sign for Q
1
(PNP) omitted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
NSBC114EPDXV6T1
NSBC124EPDXV6T1
NSBC144EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1
NSBC143TPDXV6T1
NSBC113EPDXV6T1
NSBC123EPDXV6T1
NSBC143EPDXV6T1
NSBC143ZPDXV6T1
NSBC124XPDXV6T1
NSBC123JPDXV6T1
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
−
−
nAdc
nAdc
mAdc
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 3) (I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
NSBC114EPDXV6T1
NSBC124EPDXV6T1
NSBC144EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1
NSBC143TPDXV6T1
NSBC113EPDXV6T1
NSBC123EPDXV6T1
NSBC143EPDXV6T1
NSBC143ZPDXV6T1
NSBC124XPDXV6T1
NSBC123JPDXV6T1
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
−
60
100
140
140
350
350
5.0
15
30
200
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
Vdc
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) NSBC113EPDXV6T1/NSBC123EPDXV6T1
(I
C
= 10 mA, I
B
= 1 mA) NSBC114TPDXV6T1/NSBC143TPDXV6T1
NSBC143EPDXV6T1/NSBC143ZPDXV6T1/NSBC124XPDXV6T1
V
CE(sat)
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
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2
NSBC114EPDXV6T1, NSBC114EPDXV6T5
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, − minus sign for Q
1
(PNP) omitted)
Characteristic
ON CHARACTERISTICS
(Note 3)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
NSBC114EPDXV6T1
NSBC124EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1
NSBC143TPDXV6T1
NSBC113EPDXV6T1
NSBC123EPDXV6T1
NSBC143EPDXV6T1
NSBC143ZPDXV6T1
NSBC124XPDXV6T1
NSBC123JPDXV6T1
NSBC144EPDXV6T1
V
OH
NSBC113EPDXV6T1
NSBC114TPDXV6T1
NSBC143TPDXV6T1
NSBC143ZPDXV6T1
NSBC114EPDXV6T1
NSBC124EPDXV6T1
NSBC144EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1
NSBC143TPDXV6T1
NSBC113EPDXV6T1
NSBC123EPDXV6T1
NSBC143EPDXV6T1
NSBC143ZPDXV6T1
NSBC124XPDXV6T1
NSBC123JPDXV6T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
0.8
0.17
−
0.8
0.055
0.38
0.038
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
1.0
0.21
−
1.0
0.1
0.47
0.047
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
1.2
0.25
−
1.2
0.185
0.56
0.056
k
W
−
−
−
−
−
−
−
−
−
−
−
−
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
NSBC114EPDXV6T1/NSBC124EPDXV6T1/NSBC144EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1/NSBC143TPDXV6T1
NSBC113EPDXV6T1/NSBC123EPDXV6T1/NSBC143EPDXV6T1
NSBC143ZPDXV6T1
NSBC124XPDXV6T1
NSBC123JPDXV6T1
R1/R2
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
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3
NSBC114EPDXV6T1, NSBC114EPDXV6T5
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
0
−50
R
qJA
= 490°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
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4
NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 NPN TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
T
A
= −25°C
25°C
0.1
75°C
1000
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 10 V
T
A
= 75°C
25°C
−25°C
100
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (mA)
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
100
75°C
IC, COLLECTOR CURRENT (mA)
10
1
0.1
0.01
25°C
T
A
= −25°C
Cob , CAPACITANCE (pF)
3
2
1
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
T
A
= −25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
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