Rev. 1.0
512K X 16 BIT LOW POWER CMOS SRAM
LY62L51316B
Issue Date
Mar.20.2020
REVISION HISTORY
Revision
Rev. 1.0
Description
Initial Issue
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
Rev. 1.0
512K X 16 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
LY62L51316B
FEATURES
Fast access time : 45/55ns
Low power consumption:
Operating current : 12mA /10mA(TYP.)
Standby current : 2.5A (TYP.)
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 48-pin 12mm x 20mm TSOP I
48-ball 6mm x 8mm TFBGA
The LY62L51316B is a 8,388,608-bit low power
CMOS static random access memory organized as
524,288 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY62L51316B is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY62L51316B operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
PRODUCT FAMILY
Product
Family
LY62L51316B
LY62L51316B(I)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
V
CC
Range
2.7 ~ 3.6V
2.7 ~ 3.6V
Speed
45/55ns
45/55ns
Power Dissipation
Standby(I
SB1
,
TYP.) Operating(I
CC
,TYP.)
2.5µA
12mA/10mA
2.5µA
12mA/10mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
Vcc
Vss
A0 - A18
512Kx16
MEMORY ARRAY
DQ0 – DQ15 Data Inputs/Outputs
DECODER
A0-A18
CE#, CE2
WE#
OE#
LB#
UB#
V
CC
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
I/O DATA
CIRCUIT
COLUMN I/O
V
SS
CE#
CE2
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
Rev. 1.0
512K X 16 BIT LOW POWER CMOS SRAM
LY62L51316B
PIN CONFIGURATION
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
Rev. 1.0
512K X 16 BIT LOW POWER CMOS SRAM
LY62L51316B
UNIT
V
V
℃
℃
W
mA
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
0 to 70(C grade)
-40 to 85(I grade)
-65 to 150
1
50
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
X
X
L
L
L
L
L
L
L
L
CE2
X
L
X
H
H
H
H
H
H
H
H
OE#
X
X
X
H
H
L
L
L
X
X
X
WE#
X
X
X
H
H
H
H
H
L
L
L
LB#
X
X
H
L
X
L
H
L
L
H
L
UB#
X
X
H
X
L
H
L
L
H
L
L
I/O OPERATION
SUPPLY CURRENT
DQ0-DQ7 DQ8-DQ15
High – Z
High – Z
I
SB1
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
I
CC
,I
CC1
High – Z
High – Z
D
OUT
High – Z
I
CC
,I
CC1
D
OUT
High – Z
D
OUT
D
OUT
High – Z
D
IN
I
CC
,I
CC1
D
IN
High – Z
D
IN
D
IN
H = V
IH
, L = V
IL
, X = Don't care.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
Rev. 1.0
512K X 16 BIT LOW POWER CMOS SRAM
LY62L51316B
TYP.
*4
3.0
-
-
-
-
2.7
-
12
10
MAX.
3.6
V
CC
+0.5
0.6
1
1
-
0.4
20
18
UNIT
V
V
V
µA
µA
V
V
mA
mA
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
SYMBOL
V
CC
V
IH*1
V
IL*2
I
LI
I
LO
V
OH
V
OL
TEST CONDITION
MIN.
2.7
2.2
- 0.2
-1
-1
2.4
-
-
-
V
CC
≧
V
IN
≧
V
S
S
V
CC
≧
V
OUT
≧
V
SS
,
Output Disabled
I
OH
= -1mA
I
OL
= 2mA
Cycle time = Min.
-45
CE#
≦
0.2V
and CE2
≧
V
CC
-0.2V
I
I/O
= 0mA
-55
Others at 0.2V or V
CC
-0.2V
Cycle time = 1µs
CE#
≦
0.2V and CE2
≧
V
CC
-0.2V
I
I/O
= 0mA
Other pins at 0.2V or V
CC
-0.2V
SL
*5
25
℃
CE#
≧
V
CC
-0.2V
SLI
*5
40
℃
or CE2
≦
0.2V
SL
Other pins at 0.2V
SLI
or V
CC
-0.2V
I
CC
Average Operating
Power supply Current
I
CC1
-
-
-
-
-
3
2.5
2.5
2.5
2.5
5
5
5
15
20
mA
µA
µA
µA
µA
Standby Power
Supply Current
I
SB1
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 6ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 6ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
5. This parameter is measured at V
CC
= 3.0V
CAPACITANCE
(T
A
= 25
℃
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -1mA/2mA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
