BTA316B-600CT
3Q Hi-Com Triac
Rev.02 - 09 May 2019
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable
plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can
occur. This "series CT" triac will commutate the full RMS current at the maximum rated junction
temperature (T
j(max)
= 150 °C) without the aid of a snubber. It is used in applications where "high
junction operating temperature capability" is required.
2. Features and benefits
•
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability
High voltage capability
Less sensitive gate for very high noise immunity
Planar passivated for voltage ruggedness and reliability
Surface mountable package
Triggering in three quadrants only
3. Applications
•
•
•
•
Applications subject to high temperature
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
junction temperature
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
2
2
full sine wave; T
mb
≤ 119 °C
Fig. 1; Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
T
j
I
GT
Static characteristics
-
-
35
35
mA
mA
Conditions
Values
600
16
140
150
150
Unit
V
A
A
A
°C
Absolute maximum rating
WeEn Semiconductors
BTA316B-600CT
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
2
-
-
500
Typ
-
-
1.3
-
Max
35
35
1.5
-
Unit
mA
mA
V
V/μs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
V
D
= 12 V; T
j
= 25 °C;
Fig.
9
I
T
= 18 A; T
j
= 25 °C;
Fig. 10
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
DM
= 402 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
Dynamic characteristics
300
-
-
V/μs
dI
com
/dt
rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 16 A;
dV
com
/dt = 20 V/μs; (snubberless
condition); gate open circuit
8
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
mb
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
2
1
3
T2
sym051
Simplified outline
Graphic symbol
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package Orderable part number Packing
Name
method
BTA316B-600CT TO263
BTA316B-600CT,118
Reel
Small packing
quantity
800
Package
version
TO263E
Package
issue date
26-May-2017
7. Marking
Table 4. Marking codes
Type number
BTA316B-600CT
Marking codes
BTA316B-600CT
BTA316B-600CT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
09 May 2019
2 / 13
WeEn Semiconductors
BTA316B-600CT
3Q Hi-Com Triac
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I
2
t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
full sine wave; T
mb
≤ 119 °C
Fig 1; Fig 2; Fig 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms
Fig 4; Fig 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
t
P
= 10 ms; SIN
I
G
= 70 mA
Conditions
Values
600
16
140
150
98
100
2
5
0.5
-40 to 150
150
Unit
V
A
A
A
A
2
s
A/μs
A
W
W
°C
°C
I
T(RMS)
(A)
20
119 °C
aae842-001
I
T(RMS)
(A)
18
aae842-002
16
17
12
8
16
4
0
-50
0
50
100
150
200
T
mb
(°C)
15
10
-2
10
-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz; T
mb
= 119 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA316B-600CT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
09 May 2019
3 / 13
WeEn Semiconductors
BTA316B-600CT
3Q Hi-Com Triac
P
tot
(W)
24
20
16
12
8
4
0
aae842-003
conduction form
angle
factor
(degrees)
α
30
60
90
120
180
2.816
1.976
1.570
1.329
1.110
α
α = 180°
120 °
90°
60°
30°
114
T
mb(max)
(°C)
120
126
132
138
144
150
20
0
4
8
12
16
I
T(RMS)
(A)
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
I
TSM
(A)
160
aae842-004
I
T
I
TSM
t
120
T
T
j(init)
= 25 °C max
80
40
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA316B-600CT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
09 May 2019
4 / 13
WeEn Semiconductors
BTA316B-600CT
3Q Hi-Com Triac
I
TSM
(A)
10
4
aae842-005
I
T
I
TSM
t
10
3
T
T
j(init)
= 25 °C max
10
2
(1)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA316B-600CT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
09 May 2019
5 / 13
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