BTA316B-600E
3Q Hi-Com Triac
Rev.02 - 06 May 2019
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a TO263 plastic package. This "series
E" triac balances the requirements of commutation performance and gate sensitivity. The "sensitive
gate" "series E" is intended for interfacing with low power drivers including microcontrollers.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct interfacing with low power drivers and microcontrollers
Good immunity to false turn-on by dV/dt
High commutation capability with sensitive gate
High voltage capability
Planar passivated for voltage ruggedness and reliability
Surface mountable package
Triggering in three quadrants only
3. Applications
•
•
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
junction temperature
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig.
7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig.
7
Min
-
-
full sine wave; T
mb
≤ 101 °C
Fig.
1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
T
j
Symbol
I
GT
Conditions
Values
600
16
140
150
125
Typ
-
-
Max
10
10
Unit
V
A
A
A
°C
Unit
mA
mA
Absolute maximum rating
Static characteristics
WeEn Semiconductors
BTA316B-600E
3Q Hi-Com Triac
Symbol
I
GT
I
H
V
T
dV
D
/dt
Parameter
gate trigger current
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig.
7
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 18 A; T
j
= 25 °C;
Fig.
10
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 16 A;
dV
com
/dt = 20 V/μs; (snubberless
condition); gate open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 16 A;
dV
com
/dt = 10 V/μs; gate open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 16 A;
dV
com
/dt = 1 V/μs; gate open circuit
Min
-
-
-
50
Typ
-
-
1.3
-
Max
10
15
1.5
-
Unit
mA
mA
V
V/μs
Static characteristics
Dynamic characteristics
dI
com
/dt
3
-
-
A/ms
6
10
-
-
-
-
A/ms
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
mb
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
2
1
3
T2
sym051
Simplified outline
Graphic symbol
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package Orderable part number Packing
Name
method
BTA316B-600E
TO263
BTA316B-600EJ
Reel
Small packing
quantity
800
Package
version
TO263E
Package
issue date
26-May-2017
7. Marking
Table 4. Marking codes
Type number
BTA316B-600E
Marking codes
BTA316B-600E
BTA316B-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
06 May 2019
2 / 13
WeEn Semiconductors
BTA316B-600E
3Q Hi-Com Triac
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I
2
t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
full sine wave; T
mb
≤ 101 °C
Fig 1;
Fig 2; Fig 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms
Fig 4; Fig 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
t
P
= 10 ms; SIN
I
G
= 20 mA
Conditions
Values
600
16
140
150
98
100
2
5
0.5
-40 to 150
125
Unit
V
A
A
A
A
2
s
A/μs
A
W
W
°C
°C
f = 50 Hz; T
mb
= 101 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
Fig. 2. RMS on-state current as a function of mounting
base temperature; maximum values
BTA316B-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
06 May 2019
3 / 13
WeEn Semiconductors
BTA316B-600E
3Q Hi-Com Triac
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA316B-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
06 May 2019
4 / 13
WeEn Semiconductors
BTA316B-600E
3Q Hi-Com Triac
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA316B-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
06 May 2019
5 / 13
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