refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
November, 2013
−
Rev. 5
1
Publication Order Number:
NJT4030P/D
P
D
, POWER DISSIPATION (W)
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3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. f
T
= |h
FE
|
•
f
test
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
(Note 3)
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Current−Gain
−
Bandwidth Product (Note 4)
(I
C
= 500 mA, V
CE
= 10 V, F
test
= 1.0 MHz)
Input Capacitance
(V
EB
= 5.0 Vdc, f = 1.0 MHz)
Output Capacitance
(V
CB
= 10 Vdc, f = 1.0 MHz)
DC Current Gain
(I
C
= 0.5 Adc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 1.0 Vdc)
Base−Emitter On Voltage
(I
C
= 1.0 Adc, V
CE
= 2.0 Vdc)
Base−Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.1 Adc)
Collector−Emitter Saturation Voltage
(I
C
= 0.5 Adc, I
B
= 5.0 mAdc)
(I
C
= 1.0 Adc, I
B
= 10 mAdc)
(I
C
= 3.0 Adc, I
B
= 0.3 Adc)
Emitter Cutoff Current
(V
BE
= 6.0 Vdc)
Collector Cutoff Current
(V
CB
= 40 Vdc)
Emitter−Base Voltage
(I
E
= 50
mAdc,
I
C
= 0 Adc)
Collector−Emitter Sustaining Voltage
(I
C
= 10 mAdc, I
B
= 0 Adc)
Characteristic
0.5
1.0
1.5
2.0
2.5
0
25
50
Figure 1. Power Derating
T
C
NJT4030P, NJV4030P
T
A
T
J
, TEMPERATURE (°C)
http://onsemi.com
75
100
V
CEO(sus)
Symbol
V
CE(sat)
V
BE(sat)
V
BE(on)
V
EBO
I
CBO
I
EBO
C
ob
h
FE
C
ib
f
T
125
Min
220
200
100
6.0
40
−
−
−
−
−
−
−
−
−
−
150
Typ
160
130
40
−
−
−
−
−
−
−
−
−
−
−
−
0.150
0.200
0.500
Max
−
400
−
100
100
1.0
1.0
−
−
−
−
−
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
−
2
NJT4030P, NJV4030P
TYPICAL CHARACTERISTICS
600
500
400
25°C
300
200
100
0
0.001
0.01
0.1
1
10
−40°C
150°C
V
CE
= 1 V
h
FE
, DC CURRENT GAIN
700
600
500
400
300
200
100
0
0.001
0.01
0.1
1
10
−40°C
25°C
V
CE
= 4 V
150°C
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
25°C
0.1
150°C
−40°C
1
I
C
/I
B
= 50
Figure 3. DC Current Gain
150°C
25°C
0.1
−40°C
0.01
0.001
0.001
0.01
0.1
1
10
0.01
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Figure 5. Collector−Emitter Saturation Voltage
V
BE(on)
, EMITTER−BASE VOLTAGE (V)
V
CE
= 2 V
I
C
= 2 A
1A
0.1
0.1 A
0.5 A
−40°C
25°C
150°C
0.01
1.0E−04 1.0E−03
1.0E−02
1.0E−01
1.0E+00
0.001
0.01
0.1
1
10
I
B
, BASE CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 6. Collector Saturation Region
Figure 7. V
BE(on)
Voltage
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3
NJT4030P, NJV4030P
TYPICAL CHARACTERISTICS
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.2
I
C
/I
B
= 10
V
BE(sat)
, EMITTER−BASE
SATURATION VOLTAGE (V)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
150°C
I
C
/I
B
= 50
−40°C
V
BE(sat)
, EMITTER−BASE
SATURATION VOLTAGE (V)
−40°C
25°C
150°C
25°C
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Saturation Voltage
350
C
ibo
, INPUT CAPACITANCE (pF)
300
250
200
150
100
50
0
0
1
2
3
4
5
6
100
C
obo
, OUTPUT CAPACITANCE (pF)
80
60
40
20
0
Figure 9. Base−Emitter Saturation Voltage
T
J
= 25°C
f
test
= 1 MHz
T
J
= 25°C
f
test
= 1 MHz
0
5
10
15
20
25
30
35
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
200
I
C
, COLLECTOR CURRENT (A)
f
Tau
, CURRENT BANDWIDTH
PRODUCT (MHz)
180
160
140
120
100
80
60
40
20
0
T
J
= 25°C
f
test
= 1 MHz
V
CE
= 10 V
10
Figure 11. Output Capacitance
0.5 ms
1 ms
1
10 ms
100 ms
0.1
0.001
0.01
0.1
1
0.01
1
10
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
100
I
C
, COLLECTOR CURRENT (A)
Figure 12. Current−Gain Bandwidth Product
Figure 13. Safe Operating Area
http://onsemi.com
4
NJT4030P, NJV4030P
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
H
E
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
D
b1
4
H
E
E
1
2
3
e1
b
e
A
q
L
L1
C
q
0.08 (0003)
A1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
mm
inches
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
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