NJL3281D (NPN)
NJL1302D (PNP)
Complementary
ThermalTrakt Transistors
The ThermalTrak family of devices has been designed to eliminate
thermal equilibrium lag time and bias trimming in audio amplifier
applications. They can also be used in other applications as transistor
die protection devices.
Features
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•
•
•
•
•
Thermally Matched Bias Diode
Instant Thermal Bias Tracking
Absolute Thermal Integrity
High Safe Operating Area
Pb−Free Packages are Available*
BIPOLAR POWER
TRANSISTORS
15 AMP, 260 VOLT, 200 WATT
TO−264, 5 LEAD
CASE 340AA
STYLE 1
Benefits
•
Eliminates Thermal Equilibrium Lag Time and Bias Trimming
•
Superior Sound Quality Through Improved Dynamic Temperature
Response
•
Significantly Improved Bias Stability
•
Simplified Assembly
♦
Reduced Labor Costs
♦
Reduced Component Count
•
High Reliability
Applications
MARKING DIAGRAM
SCHEMATIC
NJLxxxxDG
AYYWW
Thermal Trak
•
High−End Consumer Audio Products
Home Amplifiers
♦
Home Receivers
•
Professional Audio Amplifiers
♦
Theater and Stadium Sound Systems
♦
Public Address Systems (PAs)
♦
NJLxxxxD = Device Code
xxxx = 3281 or 1302
G
= Pb−Free Package
A
= Assembly Location
YY
= Year
WW
= Work Week
ORDERING INFORMATION
Device
NJL3281D
NJL3281DG
NJL1302D
NJL1302DG
Package
TO−264
TO−264
(Pb−Free)
TO−264
TO−264
(Pb−Free)
Shipping
25 Units / Rail
25 Units / Rail
25 Units / Rail
25 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
June, 2006 − Rev. 2
Publication Order Number:
NJL3281D/D
NJL3281D (NPN) NJL1302D (PNP)
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage − 1.5 V
Collector Current
− Continuous
− Peak (Note 1)
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
B
P
D
T
J
, T
stg
V
R
I
F(AV)
Value
260
260
5
260
15
25
1.5
200
1.43
− 65 to +150
200
1.0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
V
A
Base Current − Continuous
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
DC Blocking Voltage
Average Rectified Forward Current
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
0.625
Unit
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
ATTRIBUTES
Characteristic
ESD Protection
Flammability Rating
Human Body Model
Machine Model
Value
>8000 V
> 400 V
UL 94 V−0 @ 0.125 in
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2
NJL3281D (NPN) NJL1302D (PNP)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 260 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 5 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 500 mAdc, V
CE
= 5 Vdc)
(I
C
= 1 Adc, V
CE
= 5 Vdc)
(I
C
= 3 Adc, V
CE
= 5 Vdc)
(I
C
= 5 Adc, V
CE
= 5 Vdc)
(I
C
= 8 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 10 Adc, I
B
= 1 Adc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 1 Adc, V
CE
= 5 Vdc, f
test
= 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 1.0 A, T
J
= 25°C)
(i
F
= 1.0 A, T
J
= 150°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 150°C)
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/ms)
2. Diode Pulse Test: Pulse Width = 300
ms,
Duty Cycle
v
2.0%.
f
T
30
C
ob
−
v
F
1.1
0.93
i
R
10
100
t
rr
100
ns
mA
600
V
−
pF
MHz
h
FE
75
75
75
75
45
V
CE(sat)
−
3
150
150
150
150
−
Vdc
V
CEO(sus)
260
I
CBO
−
I
EBO
−
5
50
mAdc
−
mAdc
Vdc
Symbol
Min
Max
Unit
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3
NJL3281D (NPN) NJL1302D (PNP)
TYPICAL CHARACTERISTICS
PNP NJL1302D
f T, CURRENT BANDWIDTH PRODUCT (MHz)
V
CE
= 10 V
40
30
20
10
0
T
J
= 25°C
f
test
= 1 MHz
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
5V
f T, CURRENT BANDWIDTH PRODUCT (MHz)
50
60
50
40
30
20
10
0
0.1
T
J
= 25°C
f
test
= 1 MHz
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
NPN NJL3281D
V
CE
= 10 V
5V
Figure 1. Typical Current Gain
Bandwidth Product
PNP NJL1302D
1000
1000
Figure 2. Typical Current Gain
Bandwidth Product
NPN NJL3281D
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
T
J
= 100°C
100
25°C
−25
°C
T
J
= 100°C
100
25°C
−25
°C
10
V
CE
= 5 V
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
10
V
CE
= 5 V
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain, V
CE
= 5 V
PNP NJL1302D
45
40
IC , COLLECTOR CURRENT (A)
35
30
25
20
15
10
5.0
0
0
T
J
= 25°C
5.0
10
15
20
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
25
1.5 A
I
B
= 2 A
IC, COLLECTOR CURRENT (A)
45
40
35
30
25
20
15
10
5.0
0
0
Figure 4. DC Current Gain, V
CE
= 5 V
NPN NJL3281D
1.5 A
I
B
= 2 A
1A
0.5 A
1A
0.5 A
T
J
= 25°C
5.0
10
15
20
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
25
Figure 5. Typical Output Characteristics
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4
Figure 6. Typical Output Characteristics
NJL3281D (NPN) NJL1302D (PNP)
TYPICAL CHARACTERISTICS
PNP NJL1302D
3.0
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
0
0.1
T
J
= 25°C
I
C
/I
B
= 10
V
BE(sat)
2.5
2.0
1.5
V
BE(sat)
1.0
0.5
0
T
J
= 25°C
I
C
/I
B
= 10
NPN NJL3281D
V
CE(sat)
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
0.1
V
CE(sat)
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 7. Typical Saturation Voltages
PNP NJL1302D
VBE(on) , BASE−EMITTER VOLTAGE (VOLTS)
T
J
= 25°C
VBE(on) , BASE−EMITTER VOLTAGE (VOLTS)
10
10
Figure 8. Typical Saturation Voltages
NPN NJL3281D
T
J
= 25°C
V
CE
= 5 V (DASHED)
1.0
V
CE
= 20 V (SOLID)
V
CE
= 5 V (DASHED)
1.0
V
CE
= 20 V (SOLID)
0.1
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
0.1
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 9. Typical Base−Emitter Voltage
Figure 10. Typical Base−Emitter Voltage
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