NJL0281D (NPN)
NJL0302D (PNP)
Complementary
ThermalTrakt Transistors
The ThermalTrak family of devices has been designed to eliminate
thermal equilibrium lag time and bias trimming in audio amplifier
applications. They can also be used in other applications as transistor
die protection devices.
Features
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•
•
•
•
•
Thermally Matched Bias Diode
Instant Thermal Bias Tracking
Absolute Thermal Integrity
High Safe Operating Area
Pb−Free Packages are Available*
BIPOLAR POWER
TRANSISTORS
15 AMP, 260 VOLT, 180 WATT
TO−264, 5 LEAD
CASE 340AA
STYLE 1
Benefits
•
Eliminates Thermal Equilibrium Lag Time and Bias Trimming
•
Superior Sound Quality Through Improved Dynamic Temperature
Response
•
Significantly Improved Bias Stability
•
Simplified Assembly
♦
Reduced Labor Costs
♦
Reduced Component Count
•
High Reliability
Applications
MARKING DIAGRAM
SCHEMATIC
NJL0xxxDG
AYYWW
Thermal Trak
•
High−End Consumer Audio Products
Home Amplifiers
♦
Home Receivers
•
Professional Audio Amplifiers
♦
Theater and Stadium Sound Systems
♦
Public Address Systems (PAs)
♦
NJL0xxxD = Device Code
xxx = 281 or 302
G
= Pb−Free Package
A
= Assembly Location
YY
= Year
WW
= Work Week
ORDERING INFORMATION
Device
NJL0281D
NJL0281DG
NJL0302D
NJL0302DG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
Package
TO−264
TO−264
(Pb−Free)
TO−264
TO−264
(Pb−Free)
Shipping
25 Units / Rail
25 Units / Rail
25 Units / Rail
25 Units / Rail
1
June, 2006 − Rev. 2
Publication Order Number:
NJL0281D/D
NJL0281D (NPN) NJL0302D (PNP)
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage − 1.5 V
Collector Current
− Continuous
− Peak (Note 1)
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
B
P
D
T
J
, T
stg
V
R
I
F(AV)
Value
260
260
5
260
15
25
1.5
180
1.43
− 65 to +150
200
1.0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
V
A
Base Current − Continuous
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
DC Blocking Voltage
Average Rectified Forward Current
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
0.694
Unit
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
ATTRIBUTES
Characteristic
ESD Protection
Flammability Rating
Human Body Model
Machine Model
Value
>8000 V
> 400 V
UL 94 V−0 @ 0.125 in
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2
NJL0281D (NPN) NJL0302D (PNP)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 260 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 5 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 500 mAdc, V
CE
= 5 Vdc)
(I
C
= 1 Adc, V
CE
= 5 Vdc)
(I
C
= 3 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 5 Adc, I
B
= 0.5 Adc)
Base−Emitter On Voltage
(I
C
= 5 Adc, V
CE
= 5 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 1 Adc, V
CE
= 5 Vdc, f
test
= 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 1.0 A, T
J
= 25°C)
(i
F
= 1.0 A, T
J
= 150°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 150°C)
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/ms)
2. Diode Pulse Test: Pulse Width = 300
ms,
Duty Cycle
v
2.0%.
f
T
30
C
ob
−
v
F
1.1
0.93
i
R
10
100
t
rr
100
ns
mA
400
V
−
pF
MHz
h
FE
75
75
75
V
CE(sat)
−
V
CE(on)
−
1.2
1.0
Vdc
150
150
150
Vdc
V
CEO(sus)
260
I
CBO
−
I
EBO
−
5
10
mAdc
−
mAdc
Vdc
Symbol
Min
Max
Unit
200
I
C
, COLLECTOR CURRENT (A)
P
D
, POWER DISSIPATION (W)
180
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
T
C
, CASE TEMPERATURE (°C)
100
1.0 ms
10
100 ms
1
DC
0.1
5.0 ms
10 ms
0.01
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Power Derating
Figure 2. Safe Operating Area
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3
NJL0281D (NPN) NJL0302D (PNP)
500
V
CE
= 5.0 V
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
100°C
100
−25°C
25°C
500
V
CE
= 5.0 V
100°C
100
−25°C
25°C
10
0.05 0.1
1
10
50
10
0.05 0.1
1
10
50
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. NJL0281A DC Current Gain
Figure 4. NJL0302A DC Current Gain
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
V
CE
= 5.0 V
1.2
1
−25°C
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (A)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.4
2.4
V
CE
= 5.0 V
1.9
1.4
25°C
100°C
0.9
−25°C
100°C
25°C
0.4
−0.1
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (A)
Figure 5. NJL0281A Base−Emitter Voltage
Figure 6. NJL0302A Base−Emitter Voltage
10
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
10
I
C
/I
B
= 10
1
100°C
25°C
0.1
−25°C
1
100°C
0.1
25°C
0.01
0.01
0.1
1
10
100
0.01
0.01
−25°C
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
100
I
C
, COLLECTOR CURRENT (A)
Figure 7. NJL0281A Saturation Voltage
Figure 8. NJL0302A Saturation Voltage
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4
NJL0281D (NPN) NJL0302D (PNP)
60
f
T
, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
f
T
, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
V
CE
= 5.0 V
50
40
30
20
25°C
10
0
0.01
70
60
50
40
30
20
10
0
0.01
25°C
V
CE
= 5.0 V
0.1
1
10
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 9. NJL0281A Current Gain Bandwidth
Product
Figure 10. NJL0302A Current Gain Bandwidth
Product
10
I
R
, REVERSE CURRENT (mA)
I
F
, FORWARD CURRENT (A)
T
J
= 100°C
10
1
1
0.1
T
J
= 25°C
0.1
25°C
−25°C
0.01
100°C
0.01
0.001
T
J
= −25°C
0.0001
0
20
40
60
80
100 120 140 160 180 200
V
R
, REVERSE VOLTAGE (VOLTS)
0.001
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
F
, VOLTAGE (VOLTS)
Figure 11. Typical Reverse Current
Figure 12. Typical Forward Voltage
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