NIF9N05CL, NIF9N05ACL
Protected Power MOSFET
2.6 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ ESD Protection
in a SOT−223 Package
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Benefits
•
High Energy Capability for Inductive Loads
•
Low Switching Noise Generation
Features
V
DSS
(Clamped)
52 V
R
DS(ON)
TYP
107 mW
I
D
MAX
2.6 A
•
•
•
•
•
•
Diode Clamp Between Gate and Source
ESD Protection
−
HBM 5000 V
Active Over−Voltage Gate to Drain Clamp
Scalable to Lower or Higher R
DS(on)
Internal Series Gate Resistance
Pb−Free Packages are Available
Drain
(Pins 2, 4)
Gate
(Pin 1)
R
G
Overvoltage
Protection
M
PWR
Applications
ESD Protection
•
Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
Source
(Pin 3)
Value
52−59
±15
2.6
10
1.69
−55
to 150
110
Unit
V
V
A
W
°C
mJ
SOT−223
CASE 318E
STYLE 3
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage
−
Continuous
Drain Current
−
Continuous @ T
A
= 25°C
−
Single Pulse (t
p
= 10
ms)
(Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 1)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source
Avalanche Energy (V
DD
= 50 V, I
D(pk)
= 1.17
A, V
GS
= 10 V, L = 160 mH, R
G
= 25
W)
Thermal Resistance,
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
E
AS
MARKING DIAGRAM
GATE
DRAIN
SOURCE
1
4
2
3
AYW
xxxxx
G
G
DRAIN
R
qJA
R
qJA
T
L
74
169
260
°C/W
°C
(Top View)
A
= Assembly Location
Y
= Year
W
= Work Week
xxxxx = F9N05 or 9N05A
= Pb−Free Package
G
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to a FR4 board using 1″ pad size, (Cu area 1.127 in
2
).
2. When surface mounted to a FR4 board using minimum recommended pad
size, (Cu area 0.412 in
2
).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 6
1
Publication Order Number:
NIF9N05CL/D
NIF9N05CL, NIF9N05ACL
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 V, I
D
= 1.0 mA, T
J
= 25°C)
(V
GS
= 0 V, I
D
= 1.0 mA, T
J
=
−40°C
to 125°C)
Temperature Coefficient (Negative)
Zero Gate Voltage Drain Current
(V
DS
= 40 V, V
GS
= 0 V)
(V
DS
= 40 V, V
GS
= 0 V, T
J
= 125°C)
Gate−Body Leakage Current
(V
GS
=
±8
V, V
DS
= 0 V)
(V
GS
=
±14
V, V
DS
= 0 V)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 100
mA)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 3.5 V, I
D
= 0.6 A)
(V
GS
= 4.0 V, I
D
= 1.5 A)
(V
GS
= 10 V, I
D
= 2.6 A)
Forward Transconductance (Note 3) (V
DS
= 15 V, I
D
= 2.6 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
Input Capacitance
Output Capacitance
Transfer Capacitance
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
V
DS
= 25 V, V
GS
= 0 V,
f = 10 kHz
V
DS
= 35 V, V
GS
= 0 V,
f = 10 kHz
C
iss
C
oss
C
rss
C
iss
C
oss
C
rss
155
60
25
170
70
30
250
100
40
pF
pF
V
GS(th)
1.3
1.75
−4.1
190
165
107
3.8
2.5
V
mV/°C
mW
V
(BR)DSS
52
50.8
55
54
−9.3
59
59.5
V
V
mV/°C
mA
Symbol
Min
Typ
Max
Unit
I
DSS
10
25
±10
I
GSS
±22
mA
R
DS(on)
380
200
125
g
FS
Mhos
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2
NIF9N05CL, NIF9N05ACL
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
V
GS
= 4.5 V, V
DS
= 40 V,
I
D
= 2.6 A (Note 3)
Gate Charge
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 1.5 A (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
Reverse Recovery Time
I
S
= 1.5 A, V
GS
= 0 V,
dI
s
/dt = 100 A/ms (Note 3)
Reverse Recovery Stored Charge
ESD CHARACTERISTICS
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
ESD
5000
500
V
I
S
= 2.6 A, V
GS
= 0 V (Note 3)
I
S
= 2.6 A, V
GS
= 0 V, T
J
= 125°C
V
SD
t
rr
t
a
t
b
Q
RR
0.81
0.66
730
200
530
6.3
mC
1.5
V
ns
V
GS
= 10 V, V
DD
= 15 V,
I
D
= 2.6 A, R
D
= 5.8
W
V
GS
= 4.5 V, V
DD
= 40 V,
I
D
= 1.0 A, R
D
= 40
W
V
GS
= 4.5 V, V
DD
= 40 V,
I
D
= 2.6 A, R
D
= 15.4
W
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
Q
T
Q
1
Q
2
275
1418
780
1120
242
1165
906
1273
107
290
1540
1000
4.5
0.9
2.6
3.9
1.0
1.7
nC
7.0
nC
ns
465
2400
1320
1900
ns
ns
Symbol
Min
Typ
Max
Unit
http://onsemi.com
3
NIF9N05CL, NIF9N05ACL
TYPICAL PERFORMANCE CURVES
6
I
D,
DRAIN CURRENT (AMPS)
V
GS
= 10, 5 & 4 V
3.8 V
3.6 V
4
3.4 V
3.2 V
2
3V
2.8 V
0
0
2.6 V
2.4 V
1
2
3
4
5
6
7
8
9
10
T
J
= 25°C
I
D,
DRAIN CURRENT (AMPS)
6
V
DS
≥
10 V
5
4
3
2
1
0
1
T
J
= 100°C
4
2
3
5
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
6
T
J
=
−55°C
T
J
= 25°C
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.4
I
D
= 2 A
T
J
= 25°C
0.3
0.24
Figure 2. Transfer Characteristics
T
J
= 25°C
0.2
V
GS
= 4 V
0.16
0.2
0.1
0.12
V
GS
= 10 V
0
2
8
10
4
6
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
12
0.08
1
2
3
4
5
6
I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1000000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
−50
I
D
= 2.6 A
V
GS
= 12 V
I
DSS
, LEAKAGE (A)
100000
T
J
= 150°C
10000
T
J
= 100°C
−25
0
25
50
75
100
125
150
1000
30
35
40
45
50
55
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NIF9N05CL, NIF9N05ACL
TYPICAL PERFORMANCE CURVES
V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
500
T
J
= 25°C
V
GS
= 0 V
5
4
3
2
1
0
V
DS
Q
GS
Q
T
V
GS
40
30
20
10
0
50
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C
iss
C, CAPACITANCE (pF)
400 V
DS
= 0 V
300
200
100
0
10
C
rss
Q
GD
C
iss
C
oss
C
rss
5
V
GS
0
V
DS
5
10
15
20
25
30
35
I
D
= 2.6 A
T
J
= 25°C
0
1
2
4
3
Q
G
, TOTAL GATE CHARGE (nC)
5
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
3
I
S
, SOURCE CURRENT (AMPS)
100000
10000
t, TIME (ns)
V
DD
= 40 V
I
D
= 2.6 A
V
GS
= 10 V
t
d(off)
V
GS
= 0 V
T
J
= 25°C
2
1000
t
f
t
r
100
t
d(on)
1
10
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.5
0.6
0.7
0.8
0.9
1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistance Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device
NIF9N05CLT1
NIF9N05CLT1G
NIF9N05ACLT1G
NIF9N05CLT3
NIF9N05CLT3G
NIF9N05ACLT3G
Package
SOT−223
SOT−223
(Pb−Free)
SOT−223
SOT−223
(Pb−Free)
4000 / Tape & Reel
1000 / Tape & Reel
Shipping
†
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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