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NIF5002N_06

产品描述5.7 A BUF OR INV BASED PRPHL DRVR
产品类别半导体    模拟混合信号IC   
文件大小72KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 选型对比 全文预览

NIF5002N_06概述

5.7 A BUF OR INV BASED PRPHL DRVR

5.7 A 缓冲或反向PRPHL驱动

NIF5002N_06规格参数

参数名称属性值
功能数量1
导通时间30 us
关断时间100 us
加工封装描述铅 FREE, CASE 318E-04, TO-261, 4 PIN
无铅Yes
状态ACTIVE
端子间距2.3 mm
端子涂层MATTE 锡
接口类型缓冲或反向PRPHL驱动
内置保护TRANSIENT; OVER 电流; OVER 电压; THERMAL
输出电流流动方向SINK
额定输出峰值电流限制5.7 A

文档预览

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NIF5002N
Preferred Device
Self−Protected FET
with Temperature and
Current Limit
42 V, 2.0 A, Single N−Channel, SOT−223
http://onsemi.com
HDPlust devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
V
(BR)DSS
(Clamped)
42 V
R
DS(ON)
TYP
165 mW @ 10 V
I
D
MAX
2.0 A*
*Max current limit value is dependent on input
condition.
Drain
Overvoltage
Protection
M
PWR
Gate
Input
R
G
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Pb−Free Packages are Available
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
4
1
2
SOT−223
CASE 318E
STYLE 3
Applications
Lighting
Solenoids
Small Motors
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
(R
G
= 1.0 MW)
Gate−to−Source Voltage
Continuous Drain Current
Power Dissipation
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
T
= 25°C (Note 3)
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
Value
42
42
"14
1.1
1.7
8.9
−55 to
150
150
Unit
V
V
V
3
MARKING DIAGRAM
1
GATE
AYW
5002N
G
G
2
DRAIN
3
SOURCE
4
DRAIN
Internally Limited
W
A
= Assembly Location
Y
= Year
W
= Work Week
5002N = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Operating Junction and Storage Temperature
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 32 V, V
G
= 5.0 V, I
PK
= 1.0 A,
L = 300 mH, R
G(ext)
= 25
W)
T
J
, T
stg
E
AS
°C
mJ
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
©
Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 7
Publication Order Number:
NIF5002N/D

NIF5002N_06相似产品对比

NIF5002N_06 NIF5002N
描述 5.7 A BUF OR INV BASED PRPHL DRVR 5.7 A BUF OR INV BASED PRPHL DRVR
功能数量 1 1
导通时间 30 us 30 us
关断时间 100 us 100 us
加工封装描述 铅 FREE, CASE 318E-04, TO-261, 4 PIN 铅 FREE, CASE 318E-04, TO-261, 4 PIN
无铅 Yes Yes
状态 ACTIVE ACTIVE
端子间距 2.3 mm 2.3 mm
端子涂层 MATTE 锡 MATTE 锡
接口类型 缓冲或反向PRPHL驱动 缓冲或反向PRPHL驱动
内置保护 TRANSIENT; OVER 电流; OVER 电压; THERMAL TRANSIENT; OVER 电流; OVER 电压; THERMAL
输出电流流动方向 SINK SINK
额定输出峰值电流限制 5.7 A 5.7 A

 
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