NID5003N
Preferred Device
Self−Protected FET
with Temperature and
Current Limit
42 V, 20 A, Single N−Channel, DPAK
HDPlust devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
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V
DSS
(Clamped)
42 V
I
D
MAX
(Limited)
20 A*
R
DS(on)
TYP
42 mW @ 10 V
Drain
Overvoltage
Protection
M
PWR
Gate
Input
R
G
•
•
•
•
•
•
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
MOSFET MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage
Drain Current
Total Power Dissipation
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Single Pulse Drain−to−Source Avalanche
Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L
= 3.2 Apk, L = 120 mH, R
G
= 25
W)
Operating and Storage Temperature Range
(Note 3)
Continuous
Symbol
V
DSS
V
GS
I
D
P
D
1.3
2.3
°C/W
R
qJC
R
qJA
R
qJA
E
AS
3.0
95
54
600
mJ
Value
42
"14
Unit
Vdc
Vdc
DPAK
CASE 369C
STYLE 2
D5003N
A
Y
W
= Device Code
= Assembly Location
= Year
= Work Week
1
2
3
MARKING
DIAGRAM
AYW
D5003N
1 = Gate
2 = Drain
3 = Source
Internally Limited
W
ORDERING INFORMATION
Device
NID5003NT4
Package
DPAK
Shipping
†
2500/Tape & Reel
T
J
, T
stg
−55 to
150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.
3. Normal pre−fault operating range. See thermal limit range conditions.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
*Max current may be limited below this value
depending on input conditions.
©
Semiconductor Components Industries, LLC, 2004
1
August, 2004 − Rev. 2
Publication Order Number:
NID5003N/D
NID5003N
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
(V
GS
= 0 Vdc, I
D
= 250
mAdc,
T
J
= −40°C to 150°C)
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
(V
DS
= 32 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
Gate Input Current
(V
GS
= 5.0 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.2 mAdc)
Threshold Temperature Coefficient
Static Drain−to−Source On−Resistance (Note 4)
(V
GS
= 10 Vdc, I
D
= 3.0 Adc, T
J
@ 25°C)
(V
GS
= 10 Vdc, I
D
= 3.0 Adc, T
J
@ 150°C)
Static Drain−to−Source On−Resistance (Note 4)
(V
GS
= 5.0 Vdc, I
D
= 3.0 Adc, T
J
@ 25°C)
(V
GS
= 5.0 Vdc, I
D
= 3.0 Adc, T
J
@ 150°C)
Source−Drain Forward On Voltage
(I
S
= 7.0 A, V
GS
= 0 V)
SWITCHING CHARACTERISTICS
Turn−on Time
(V
in
to 90% I
D
)
Turn−off Time
(V
in
to 10% I
D
)
Slew Rate On
Slew Rate Off
R
L
= 4.7
W,
V
in
= 0 to 10 V, V
DD
= 12 V
R
L
= 4.7
W,
V
in
= 0 to 10 V, V
DD
= 12 V
R
L
= 4.7
W,
V
in
= 0 to 10 V, V
DD
= 12 V
R
L
= 4.7
W,
V
in
= 10 to 0 V, V
DD
= 12 V
T
(on)
T
(off)
−dV
DS
/dt
on
dV
DS
/dt
off
−
−
−
−
16
80
1.4
0.5
20
100
−
−
V/ms
V/ms
ms
V
GS(th)
1.0
−
R
DS(on)
−
−
R
DS(on)
−
−
V
SD
−
50
88
0.95
58
125
1.1
V
42
76
51
104
mW
1.7
5.0
2.2
−
Vdc
−mV/°C
mW
V
(BR)DSS
42
40
I
DSS
−
−
I
GSSF
−
0.6
2.5
50
5.0
−
125
mAdc
46
45
51
51
Vdc
mAdc
Symbol
Min
Typ
Max
Unit
SELF PROTECTION CHARACTERISTICS
(T
J
= 25°C unless otherwise noted) (Note 5)
Current Limit
Current Limit
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
Input Current during
Thermal Fault
Input Current during
Thermal Fault
(V
GS
= 5.0 Vdc)
V
DS
= 10 V (V
GS
= 5.0 Vdc, T
J
= 150°C)
(V
GS
= 10 Vdc)
V
DS
= 10 V (V
GS
= 10 Vdc, T
J
= 150°C)
V
GS
= 5.0 Vdc
V
GS
= 5.0 Vdc
V
GS
= 10 Vdc
V
GS
= 10 Vdc
V
DS
= 35 V, (V
GS
= 5.0 V, T
j
= 150°C)
V
DS
= 35 V, (V
GS
= 10 V, T
j
= 150°C)
I
LIM
I
LIM
T
LIM(off)
DT
LIM(on)
T
LIM(off)
DT
LIM(on)
I
g(fault)
I
g(fault)
12
7
18
13
150
−
150
−
0.6
2.0
18
13
22
18
175
15
165
15
−
−
24
18
30
25
200
−
185
−
−
−
°C
°C
°C
°C
mA
mA
Adc
ESD ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
4000
400
−
−
−
−
V
4. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
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2
NID5003N
TYPICAL PERFORMANCE CURVES
35
I
D,
DRAIN CURRENT (AMPS)
I
D,
DRAIN CURRENT (AMPS)
30
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
25
V
DS
≥
10 V
20
25°C
T
J
= −55°C
15
10
100°C
5
0
1
1.5
3.5
3
2
2.5
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
4
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2
4
6
5
7
8
9
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
3
10
I
D
= 5 A
T
J
= 25°C
0.06
Figure 2. Transfer Characteristics
T
J
= 25°C
0.055
0.05
0.045
V
GS
= 10 V
0.04
0.035
0.03
2
3
4
5
6
7
8
9
10
I
D,
DRAIN CURRENT (AMPS)
V
GS
= 5 V
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.8
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−50 −30 −10
10
10
30
50
70
90
110 130 150
I
D
= 5 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
10000
100000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
T
J
= 100°C
100
0
5
10
15
20
25
30
35
40
45
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
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