NGD18N40CLB,
NGD18N40ACLB
Ignition IGBT, 18 A, 400 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
www.onsemi.com
•
•
•
•
•
•
•
•
•
•
•
•
Ideal for Coil−on−Plug Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
G
) and Gate−Emitter Resistor (R
GE
)
Emitter Ballasting for Short−Circuit Capability
These are Pb−Free Devices
18 AMPS, 400 VOLTS
V
CE(on)
3
2.0 V @
I
C
= 10 A, V
GE
.
4.5 V
C
G
R
GE
E
4
1 2
3
DPAK
CASE 369C
STYLE 7
MARKING DIAGRAM
1
Gate
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ T
C
= 25°C − Pulsed
ESD (Human Body Model)
R = 1500
W,
C = 100 pF
ESD (Machine Model) R = 0
W,
C = 200 pF
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Temperature Range
Symbol
V
CES
V
CER
V
GE
I
C
ESD
8.0
ESD
P
D
T
J
, T
stg
800
115
0.77
−55 to
+175
V
Watts
W/°C
°C
Value
430
430
18
15
50
Unit
V
DC
V
DC
V
DC
A
DC
A
AC
kV
2
Collector
3
Emitter
G18N40x
Y
WW
G
YWW
G18
N40xG
4
Collector
= Device Code
x = B or A
= Year
= Work Week
= Pb−Free Device
ORDERING INFORMATION
Device
NGD18N40CLBT4G
NGD18N40ACLBT4G
Package
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
†
2500/Tape &
Reel
2500/Tape &
Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
June, 2016 − Rev. 10
Publication Order Number:
NGD18N40CLB/D
NGD18N40CLB, NGD18N40ACLB
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS
(−55°
≤
T
J
≤
175°C)
Characteristic
Single Pulse Collector−to−Emitter Avalanche Energy
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 21.1 A, L = 1.8 mH, Starting T
J
= 25°C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 16.2 A, L = 3.0 mH, Starting T
J
= 25°C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 18.3 A, L = 1.8 mH, Starting T
J
= 125°C
Reverse Avalanche Energy
V
CC
= 100 V, V
GE
= 20 V, Pk I
L
= 25.8 A, L = 6.0 mH, Starting T
J
= 25°C
Symbol
E
AS
400
400
300
E
AS(R)
2000
mJ
Value
Unit
mJ
MAXIMUM SHORT−CIRCUIT TIMES
(−55°C
≤
T
J
≤
150°C)
Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period)
Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period)
t
sc1
t
sc2
750
5.0
ms
ms
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
DPAK (Note 1)
R
θJC
R
θJA
T
L
1.3
95
275
°C/W
°C/W
°C
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
BV
CES
I
C
= 2.0 mA
I
C
= 10 mA
Zero Gate Voltage Collector Current
I
CES
V
CE
= 350 V,
V
GE
= 0 V
V
CE
= 15 V,
V
GE
= 0 V
Reverse Collector−Emitter Leakage Current
I
ECS
V
CE
= −24 V
T
J
= −40°C to
150°C
T
J
= −40°C to
150°C
T
J
= 25°C
T
J
= 150°C
T
J
= −40°C
T
J
= 25°C
T
J
= 25°C
T
J
= 150°C
T
J
= −40°C
Reverse Collector−Emitter Clamp Voltage
B
VCES(R)
I
C
= −75 mA
T
J
= 25°C
T
J
= 150°C
T
J
= −40°C
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Emitter Resistor
BV
GES
I
GES
R
GE
I
G
= 5.0 mA
V
GE
= 10 V
−
T
J
= −40°C to
150°C
T
J
= −40°C to
150°C
T
J
= −40°C to
150°C
380
390
−
−
−
−
−
−
−
27
30
25
11
384
10
395
405
2.0
10
1.0
−
0.7
12
0.1
33
36
32
13
640
16
420
430
20
40*
10
2.0
1.0
25*
1.0
37
40
35
15
700
26
V
DC
mA
DC
kW
V
DC
mA
DC
mA
V
DC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. When surface mounted to an FR4 board using the minimum recommended pad size.
*Maximum Value of Characteristic across Temperature Range.
www.onsemi.com
2
NGD18N40CLB, NGD18N40ACLB
ELECTRICAL CHARACTERISTICS
(continued)
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GE(th)
I
C
= 1.0 mA,
V
GE
= V
CE
Threshold Temperature Coefficient
(Negative)
Collector−to−Emitter On−Voltage
−
V
CE(on)
I
C
= 6.0 A,
V
GE
= 4.0 V
−
T
J
= 25°C
T
J
= 150°C
T
J
= −40°C
−
T
J
= 25°C
T
J
= 150°C
T
J
= −40°C
T
J
= 25°C
I
C
= 8.0 A,
V
GE
= 4.0 V
T
J
= 150°C
T
J
= −40°C
T
J
= 25°C
I
C
= 10 A,
V
GE
= 4.0 V
T
J
= 150°C
T
J
= −40°C
T
J
= 25°C
I
C
= 15 A,
V
GE
= 4.0 V
T
J
= 150°C
T
J
= −40°C
T
J
= 25°C
I
C
= 10 A,
V
GE
= 4.5 V
I
C
= 6.5 A,
V
GE
= 3.7 V
Forward Transconductance
gfs
V
CE
= 5.0 V, I
C
= 6.0 A
T
J
= 150°C
T
J
= −40°C
T
J
= 25°C
T
J
= −40°C to
150°C
1.1
0.75
1.2
−
1.0
0.9
1.1
1.3
1.2
1.4
1.4
1.4
1.4
1.8
2.0
1.7
1.3
1.3
1.4
−
8.0
1.4
1.0
1.6
3.4
1.4
1.3
1.45
1.6
1.55
1.6
1.8
1.8
1.8
2.2
2.4
2.1
1.8
1.75
1.8
−
14
1.9
1.4
2.1*
−
1.6
1.6
1.7*
1.9*
1.8
1.9*
2.05
2.0
2.1*
2.5
2.6*
2.5
2.0*
2.0*
2.0*
1.65
25
Mhos
mV/°C
V
DC
V
DC
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
C
ISS
C
OSS
C
RSS
V
CC
= 25 V, V
GE
= 0 V
f = 1.0 MHz
T
J
= −40°C to
150°C
400
50
4.0
800
75
7.0
1000
100
10
pF
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−On Delay Time
Rise Time
t
d(off)
t
f
t
d(on)
t
r
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kW, R
L
= 46
W,
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kW, R
L
= 46
W,
V
CC
= 10 V, I
C
= 6.5 A
R
G
= 1.0 kW, R
L
= 1.5
W
V
CC
= 10 V, I
C
= 6.5 A
R
G
= 1.0 kW, R
L
= 1.5
W
T
J
= 25°C
T
J
= 25°C
T
J
= 25°C
T
J
= 25°C
−
−
−
−
4.0
9.0
0.7
4.5
10
15
4.0
7.0
mSec
mSec
2. Pulse Test: Pulse Width
v
300
mS,
Duty Cycle
v
2%.
*Maximum Value of Characteristic across Temperature Range.
www.onsemi.com
3
NGD18N40CLB, NGD18N40ACLB
TYPICAL ELECTRICAL CHARACTERISTICS
(unless otherwise noted)
60
I
C,
COLLECTOR CURRENT (AMPS)
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
10
0
0
1
2
3
4
5
6
7
8
9
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
2.5 V
I
C,
COLLECTOR CURRENT (AMPS)
V
GE
= 10 V
50
T
J
= 25°C
40
30
20
60
V
GE
= 10 V
50
T
J
= −40°C
40
30
20
3.0 V
10
2.5 V
0
0
1
2
3
4
5
6
7
8
9
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Figure 1. Output Characteristics
60
I
C,
COLLECTOR CURRENT (AMPS)
V
GE
= 10 V
50
T
J
= 150°C
40
30
20
10
0
0
1
2
3
4
5
6
7
8
9
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
2.5 V
6.0 V
60
I
C,
COLLECTOR CURRENT (AMPS)
Figure 2. Output Characteristics
V
CE
= 10 V
50
T
J
= −40°C
40
30
20
10
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
T
J
= 150°C
T
J
= 25°C
Figure 3. Output Characteristics
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
4.0
3.5
3.0
2.5
2.0
I
C
= 10 A
1.5
1.0
0.5
0.0
−50
−25
0
25
50
75
100
125
150
I
C
= 5 A
V
GE
= 5 V
I
C
= 25 A
I
C
= 20 A
I
C
= 15 A
3
T
J
= 25°C
2.5
I
C
= 15 A
2
1.5
1
0.5
0
3
4
5
6
7
8
9
10
GATE−TO−EMITTER VOLTAGE (VOLTS)
I
C
= 10 A
I
C
= 5 A
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Collector−to−Emitter Saturation
Voltage versus Junction Temperature
Figure 6. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
www.onsemi.com
4
NGD18N40CLB, NGD18N40ACLB
TYPICAL ELECTRICAL CHARACTERISTICS
(unless otherwise noted)
COLLECTOR TO EMITTER VOLTAGE (VOLTS)
3
2.5
2
1.5
I
C
= 5 A
1
0.5
0
3
4
5
6
7
8
9
10
GATE TO EMITTER VOLTAGE (VOLTS)
I
C
= 15 A
I
C
= 10 A
T
J
= 150°C
10000
C
iss
C, CAPACITANCE (pF)
1000
100
C
oss
10
C
rss
1
0
0
20
40
60
80
100 120
140 160 180 200
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 7. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
GATE THRESHOLD VOLTAGE (VOLTS)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−50 −30 −10
10
30
50
70
90
110 130 150
V
TH
− 4
σ
V
TH
+ 4
σ
V
TH
30
25
I
L
, LATCH CURRENT (AMPS)
20
15
10
5
0
−50 −25
Figure 8. Capacitance Variation
V
CC
= 50 V
V
GE
= 5.0 V
R
G
= 1000
W
L = 1.8 mH
L = 3 mH
L = 6 mH
0
25
50
75
100
125
150 175
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 9. Gate Threshold Voltage versus
Temperature
30
I
L
, LATCH CURRENT (AMPS)
25
L = 1.8 mH
20
15
10
5
0
−50 −25
L = 3 mH
L = 6 mH
V
CC
= 50 V
V
GE
= 5.0 V
R
G
= 1000
W
12
10
SWITCHING TIME (ms)
8
6
Figure 10. Minimum Open Secondary Latch
Current versus Temperature
V
CC
= 300 V
V
GE
= 5.0 V
R
G
= 1000
W
I
C
= 10 A
L = 300
mH
t
f
t
d(off)
4
2
0
−50 −30 −10
0
25
50
75
100
125
150
175
10
30
50
70
90
110 130 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 11. Typical Open Secondary Latch
Current versus Temperature
Figure 12. Inductive Switching Fall Time
versus Temperature
www.onsemi.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
