NGB8202N
Ignition IGBT
20 A, 400 V, N−Channel D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
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•
Ideal for Coil−on−Plug and Driver−on−Coil Applications
•
Gate−Emitter ESD Protection
•
Temperature Compensated Gate−Collector Voltage Clamp Limits
•
•
•
•
•
•
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
G
) and Gate−Emitter Resistor (R
GE
)
Pb−Free Package is Available
G
20 AMPS, 400 VOLTS
V
CE(on)
= 1.3 V @
I
C
= 10 A, V
GE
.
4.5 V
C
R
G
R
GE
E
Applications
•
Ignition Systems
1
D
2
PAK
CASE 418B
STYLE 4
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ T
C
= 25°C
−
Pulsed
Continuous Gate Current
Transient Gate Current (t≤2 ms, f≤100 Hz)
ESD (Charged−Device Model)
ESD (Human Body Model)
R = 1500
W,
C = 100 pF
ESD (Machine Model) R = 0
W,
C = 200 pF
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating & Storage Temperature Range
Symbol
V
CES
V
CER
V
GE
I
C
I
G
I
G
ESD
ESD
ESD
P
D
T
J
, T
stg
Value
440
440
"15
20
50
1.0
20
2.0
8.0
500
150
1.0
−55
to +175
Unit
V
V
V
A
DC
A
AC
mA
mA
kV
kV
V
W
W/°C
°C
MARKING DIAGRAM
4
Collector
GB
8202NG
AYWW
1
Gate
GB8202N
A
Y
WW
G
3
Emitter
2
Collector
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGB8202NT4
NGB8202NT4G
Package
D
2
PAK
D
2
PAK
(Pb−Free)
Shipping
†
800/Tape & Reel
800/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Publication Order Number:
NGB8202N/D
©
Semiconductor Components Industries, LLC, 2006
August, 2006
−
Rev. 5
NGB8202N
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS
(−55°
≤
T
J
≤
175°C)
Characteristic
Single Pulse Collector−to−Emitter Avalanche Energy
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 16.7 A, R
G
= 1000
W,
L = 1.8 mH, Starting T
J
= 25°C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 14.9 A, R
G
= 1000
W,
L = 1.8 mH, Starting T
J
= 150°C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 14.1 A, R
G
= 1000
W,
L = 1.8 mH, Starting T
J
= 175°C
Reverse Avalanche Energy
V
CC
= 100 V, V
GE
= 20 V, Pk I
L
= 25.8 A, L = 6.0 mH, Starting T
J
= 25°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 1)
Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2)
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
R
qJC
R
qJA
T
L
1.0
62.5
275
°C/W
°C/W
°C
Symbol
E
AS
Value
250
200
180
2000
Unit
mJ
E
AS(R)
mJ
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
BV
CES
I
CES
I
C
= 2.0 mA
I
C
= 10 mA
Zero Gate Voltage Collector Current
V
GE
= 0 V,
V
CE
= 15 V
V
CE
= 200 V,
V
GE
= 0 V
Reverse Collector−Emitter Clamp
Voltage
B
VCES(R)
I
C
=
−75
mA
I
CES(R)
V
CE
=
−24
V
BV
GES
I
GES
R
G
R
GE
V
GE(th)
I
G
=
"5.0
mA
V
GE
=
"5.0
V
T
J
=
−40°C
to 175°C
T
J
=
−40°C
to 175°C
T
J
= 25°C
T
J
= 25°C
T
J
= 175°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 175°C
T
J
=
−40°C
Reverse Collector−Emitter Leakage
Current
T
J
= 25°C
T
J
= 175°C
T
J
=
−40°C
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor (Optional)
Gate−Emitter Resistor
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
I
C
= 1.0 mA,
V
GE
= V
CE
T
J
= 25°C
T
J
= 175°C
T
J
=
−40°C
Threshold Temperature Coefficient
(Negative)
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width
v
300
mS,
Duty Cycle
v
2%.
1.5
0.7
1.7
4.0
1.8
1.0
2.0
4.6
2.1
1.3
2.3*
5.2
mV/°C
V
T
J
=
−40°C
to 175°C
T
J
=
−40°C
to 175°C
T
J
=
−40°C
to 175°C
T
J
=
−40°C
to 175°C
14.25
0.5
1.0
0.4
30
35
30
0.05
1.0
0.005
12
200
370
390
395
415
0.1
1.5
25
0.8
35
39
33
0.1
5.0
0.01
12.5
300
70
16
25
420
440
1.0
10
100*
5.0
39
45*
37
0.5
10*
0.1
14
350*
V
mA
W
kW
mA
V
mA
mA
V
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
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2
NGB8202N
ELECTRICAL CHARACTERISTICS
Characteristic
ON CHARACTERISTICS
(Note 4)
Collector−to−Emitter On−Voltage
V
CE(on)
I
C
= 6.5 A,
V
GE
= 3.7 V
T
J
= 25°C
T
J
= 175°C
T
J
=
−40°C
T
J
= 25°C
I
C
= 9.0 A,
V
GE
= 3.9 V
T
J
= 175°C
T
J
=
−40°C
T
J
= 25°C
I
C
= 7.5 A,
V
GE
= 4.5 V
T
J
= 175°C
T
J
=
−40°C
T
J
= 25°C
I
C
= 10 A,
V
GE
= 4.5 V
T
J
= 175°C
T
J
=
−40°C
T
J
= 25°C
I
C
= 15 A,
V
GE
= 4.5 V
T
J
= 175°C
T
J
=
−40°C
T
J
= 25°C
I
C
= 20 A,
V
GE
= 4.5 V
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
t
d(off)
t
f
t
d(off)
t
f
t
d(on)
t
r
V
CC
= 14 V, I
C
= 9.0 A
R
G
= 1.0 kW, R
L
= 1.5
W,
V
GE
= 5.0 V
V
CC
= 300 V, I
C
= 9.0 A
R
G
= 1.0 kW,
L = 300
mH,
V
GE
= 5.0 V
V
CC
= 300 V, I
C
= 9.0 A
R
G
= 1.0 kW, R
L
= 33
W,
V
GE
= 5.0 V
T
J
= 25°C
T
J
= 175°C
T
J
= 25°C
T
J
= 175°C
Turn−Off Delay Time (Inductive)
T
J
= 25°C
T
J
= 175°C
T
J
= 25°C
T
J
= 175°C
Turn−On Delay Time
T
J
= 25°C
T
J
= 175°C
T
J
= 25°C
T
J
= 175°C
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width
v
300
mS,
Duty Cycle
v
2%.
6.0
6.0
4.0
8.0
3.0
5.0
1.5
5.0
1.0
1.0
4.0
3.0
8.0
8.0
6.0
10.5
5.0
7.0
3.0
7.0
1.5
1.5
6.0
5.0
10
10
8.0
14
7.0
9.0
4.5
10
2.0
2.0
8.0
7.0
mSec
C
ISS
C
OSS
C
RSS
f = 10 kHz, V
CE
= 25 V
T
J
= 25°C
1100
70
18
1300
80
20
1500
90
22
pF
gfs
I
C
= 6.0 A,
V
CE
= 5.0 V
T
J
= 175°C
T
J
=
−40°C
T
J
= 25°C
0.95
0.7
1.0
0.95
0.8
1.1
0.85
0.7
1.0
1.0
0.8
1.1
1.15
1.0
1.25
1.3
1.2
1.4
10
1.15
0.95
1.3
1.25
1.05
1.4
1.15
0.95
1.3
1.3
1.05
1.4
1.45
1.3
1.55
1.6
1.5
1.75
18
1.35
1.15
1.40
1.45
1.25
1.5
1.4
1.2
1.6*
1.6
1.4
1.7*
1.7
1.55
1.8*
1.9
1.8
2.0*
25
Mhos
V
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
Fall Time (Resistive)
Fall Time (Inductive)
Rise Time
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3
NGB8202N
TYPICAL ELECTRICAL CHARACTERISTICS
400
I
A
, AVALANCHE CURRENT (A)
350
SCIS ENERGY (mJ)
300
250
200
150
100
50
0
0
2
4
6
V
CC
= 14 V
V
GE
= 5.0 V
R
G
= 1000
W
8
10
INDUCTOR (mH)
T
J
= 175°C
T
J
= 25°C
30
25
20
15
10
5
0
−50
L = 1.8 mH
L = 3.0 mH
V
CC
= 14 V
V
GE
= 5.0 V
R
G
= 1000
W
L = 10 mH
−25
0
25
50
75
100
125
150 175
T
J
, JUNCTION TEMPERATURE (°C)
Figure 1. Self Clamped Inductive Switching
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
2.0
I
C,
COLLECTOR CURRENT (A)
1.75
1.5
1.25
1.0
0.75
0.5
0.25
0.0
−50
V
GE
= 4.5 V
−25
0
25
50
75
100
125
150
175
I
C
= 25 A
I
C
= 20 A
I
C
= 15 A
I
C
= 10 A
I
C
= 7.5 A
60
50
40
30
20
10
0
Figure 2. Open Secondary Avalanche Current
vs. Temperature
V
GE
= 10 V
5V
T
J
= 175°C
3.5 V
3V
2.5 V
4.5 V
4V
0
1
2
3
4
5
6
7
8
T
J
, JUNCTION TEMPERATURE (°C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Collector−to−Emitter Voltage vs.
Junction Temperature
60
I
C,
COLLECTOR CURRENT (A)
50
40
T
J
= 25°C
30
20
10
0
3V
3.5 V
I
C,
COLLECTOR CURRENT (A)
V
GE
= 10 V
5V
4.5 V
4V
60
Figure 4. Collector Current vs.
Collector−to−Emitter Voltage
V
GE
= 10 V
50
5V
40
T
J
=
−40°C
30
20
4.5 V
4V
3.5 V
3V
10
0
2.5 V
0
1
2
3
4
5
6
7
8
2.5 V
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs.
Collector−to−Emitter Voltage
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
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4
NGB8202N
TYPICAL ELECTRICAL CHARACTERISTICS
V
CE
= 5 V
COLLECTOR TO EMITTER LEAKAGE
CURRENT (mA)
45
I
C
, COLLECTOR CURRENT (A)
40
35
30
25
20
15
10
5
0
0
0.5
1
T
J
= 175°C
1.5
2
2.5
T
J
=
−40°C
3
3.5
4
T
J
= 25°C
10000
1000
100
10
V
CE
= 200 V
1.0
0.1
−50
V
CE
=
−24
V
−25
0
25
50
75
100
125
150 175
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
10000
2.50
GATE THRESHOLD VOLTAGE (V)
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
−50
−25
0
25
50
75
100
125
150
175
Mean + 4
s
Mean
−
4
s
Mean
C, CAPACITANCE (pF)
1000
100
10
1.0
0.1
C
iss
C
oss
C
rss
0
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 9. Gate Threshold Voltage vs.
Temperature
12
10
SWITCHING TIME (ms)
8
6
4
2
0
25
V
CC
= 300 V
V
GE
= 5.0 V
R
G
= 1000
W
I
C
= 9.0 A
R
L
= 33
W
50
75
100
125
150
175
12
10
SWITCHING TIME (ms)
8
6
4
2
0
25
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
t
fall
t
delay
V
CC
= 300 V
V
GE
= 5.0 V
R
G
= 1000
W
I
C
= 9.0 A
L = 300
mH
t
delay
t
fall
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 11. Resistive Switching Fall Time vs.
Temperature
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5
Figure 12. Inductive Switching Fall Time vs.
Temperature
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