TSOP312..TB1
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP312..TB1 - series are miniaturized receiv-
ers for infrared remote control systems. PIN diode
and preamplifier are assembled on lead frame, the
epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP312..TB1 is the
standard IR remote control receiver series for 3 V
supply voltage, supporting all major transmission
codes.
1
2
3
94 8692
Features
• Photo detector and preamplifier in one
package
• Internal filter for PCM frequency
• Improved shielding against electrical
field
disturbance
• TTL and CMOS compatibility
• Output active low
• Supply voltage: 2.7 V to 5.5 V
• Improved immunity against ambient light
Mechanical Data
Pinning:
1 = GND, 2 = V
S
, 3 = OUT
e3
Parts Table
Part
TSOP31230TB1
TSOP31233TB1
TSOP31236TB1
TSOP31237TB1
TSOP31238TB1
TSOP31240TB1
TSOP31256TB1
Carrier Frequency
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
Block Diagram
16832
Application Circuit
2
30 kΩ
Input
PIN
AGC
Band
Pass
Demo-
dulator
V
S
17170
3
OUT
Circuit
Transmitter
TSOPxxxx
with
TSALxxxx
R
1
=
100
Ω
V
S
C
1
=
4.7
µF
V
O
+V
S
OUT
GND
µC
GND
1
Control Circuit
GND
R
1
+
C
1
recommended to suppress power supply
disturbances.
The output
voltage
should not
be hold
continuously at
a
voltage below
V
O
=
2.0 V
by
the external circuit.
Document Number 84646
Rev. 1.0, 31-Jan-05
www.vishay.com
1
TSOP312..TB1
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
(T
amb
≤
85 °C)
t
≤
10 s, 1 mm from case
(Pin 2)
(Pin 2)
(Pin 3)
(Pin 3)
Test condition
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
Value
- 0.3 to
+ 6.0
3
- 0.3 to
(V
S
+ 0.3)
10
100
- 25 to + 85
- 25 to + 85
30
260
Unit
V
mA
V
mA
°C
°C
°C
mW
°C
Electrical and Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
V
S
= 3 V
Parameter
Supply Current (Pin 3)
Supply Voltage
Transmission Distance
E
v
= 0, test signal see fig.1,
IR diode TSAL6200,
I
F
= 250 mA
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
,
test signal see fig. 1
V
S
= 3 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
V
S
= 3 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
V
S
= 5 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
V
S
= 5 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
Angle of half transmission
distance
E
v
= 0
E
v
= 40 klx, sunlight
Test condition
Symbol
I
SD
I
SH
V
S
d
2.7
35
Min
0.7
Typ.
1.2
1.3
5.5
Max
1.5
Unit
mA
mA
V
m
Output Voltage Low (Pin 1)
Minimum Irradiance (30 - 40
kHz)
V
OSL
E
e min
0.35
250
0.5
mV
mW/m
2
Minimum Irradiance (56 kHz)
E
e min
0.4
0.6
mW/m
2
Minimum Irradiance (30 - 40
kHz)
E
e min
0.45
0.6
mW/m
2
Minimum Irradiance (56 kHz)
E
e min
0.5
0.7
mW/m
2
Maximum Irradiance
Directivity
E
e max
ϕ
1/2
30
± 45
W/m
2
deg
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2
Document Number 84646
Rev. 1.0, 31-Jan-05
TSOP312..TB1
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
E
e
Optical Test Signal
(IR
diode TSAL6200, I
F
=
0.4 A, 30 pulses,
f = f
0
,
T
=
10 ms)
T
on
,T
off
–
Output Pulse
Width (
ms
)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
l
=
950 nm,
optical test signal,
fig.3
Toff
Ton
t
t
pi
*
T
*
t
pi
w
10/fo is recommended
for
optimal
function
V
O
V
OH
V
OL
t
d1
)
Output Signal
1
)
2
)
16110
7/f
0
<
t
d
<
15/f
0
t
pi
–5/f
0
<
t
po
<
t
pi
+6/f
0
t
po2
)
t
10.0
100.0 1000.010000.0
16909
E
e
–
Irradiance
(
mW/m
2
)
Figure 1. Output Function
Figure 4. Output Pulse Diagram
1.0
t
po
–
Output Pulse
Width (
ms
)
1.2
E
e min
/ E
e
– Rel. Responsivity
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
Output Pulse
1.0
0.8
0.6
0.4
0.2
0.0
0.7
f = f
0
"5%
Df
(
3dB
) = f
0
/10
0.9
1.1
1.3
Input Burst Duration
l
=
950 nm,
optical test signal,
fig.1
10.0
100.0 1000.010000.0
16925
16908
E
e
–
Irradiance
(
mW/m
2
)
f/f
0
– Relative Frequency
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 5. Frequency Dependence of Responsivity
E
e
Optical Test Signal
E
e min
–
Threshold Irradiance
(
mW/m
2
)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
Ambient,
l
=
950 nm
Correlation
with
ambient light sources:
10W/m
2
^1.4klx
(Std.illum.A,T=2855K)
10W/m
2
^8.2klx
(Daylight,T=5900K)
600
ms
T
=
60 ms
Output Signal,
(
see
Fig.4 )
600
ms
t
94 8134
V
O
V
OH
V
OL
T
on
T
off
t
16911
0.10
1.00
10.00
(W/m
2
)
100.00
E –
Ambient DC Irradiance
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
Document Number 84646
Rev. 1.0, 31-Jan-05
www.vishay.com
3
TSOP312..TB1
Vishay Semiconductors
E
e min
–
Threshold Irradiance
(
mW/m
2
)
E
e min
–
Threshold Irradiance
(
mW/m
2
)
2.0
f = f
o
f =
10 kHz
1.0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
–30 –15
0
15 30 45 60
75
T
amb
–
Ambient Temperature
(
C
)
Sensitivity in dark ambient
1.5
f =
1 kHz
0.5
f =
100
Hz
0.0
0.1
1.0
10.0
100.0
1000.0
DV
sRMS
–
AC Voltage on DC Supply Voltage
(mV)
90
16912
16918
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 10. Sensitivity vs. Ambient Temperature
E
e min
–
Threshold Irradiance
(
mW/m
2
)
2.0
f(E) = f
0
1.6
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
1.6
2.0
E – Field
Strength of Disturbance
(
kV/m
)
S
(
l
)
rel
– Relative
Spectral Sensitivity
1.2
1.0
0.8
0.6
0.4
0.2
0
750
850
950
1050
1150
94 8147
94 8408
l
– Wavelength (
nm
)
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0.8
0.7
Max. Envelope
Duty Cycle
0°
10°
20°
30°
0.6
40°
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
95 11340p2
1.0
0.9
0.8
f =
38 kHz,
E
e
=
2
mW/m
2
0.7
50°
60°
70°
80°
0.6
0.4 0.2
0
0.2
0.4 0.6
d
rel
-
Relative
Transmission Distance
16913
Burst
Length (
number of cycles
/ burst )
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Horizontal Directivity
ϕ
x
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4
Document Number 84646
Rev. 1.0, 31-Jan-05
TSOP312..TB1
Vishay Semiconductors
0°
10°
20°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6 0.4 0.2
0
0.2
0.4 0.6
d
rel
-
Relative
Transmission Distance
95 11339p2
Figure 13. Vertical Directivity
ϕ
y
1.0
E
e min
–
Sensitivity
(
mW/m
2
)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.0 2.5 3.0 3.5 4.0 4.5
5.0 5.5
6.0
17185
V
S
–
Supply Voltage
(
V
)
Figure 14. Sensitivity vs. Supply Voltage
Document Number 84646
Rev. 1.0, 31-Jan-05
www.vishay.com
5
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