MVR2N2222A(L)
Qualified Levels:
MVR
Rad Hard NPN Silicon Switching Transistor
Screened per MIL-PRF-19500 & ESCC 22900
QPL RANGE and RAD LEVEL
Radiation Level
TID
ELDRS
MVR2N2222A(L)
100 Krad
100 Krad
DESCRIPTION
This RHA level NPN switching transistor, MVR2N2222A device in a TO-206AA package, is
ideal to drive many high-reliability applications. This device is constructed and screened to a
JANTXV performance level with radiation test method 1019 wafer lot acceptance conducted
on all die lots. Fully compliant to
GSFC EEE-INST-002
reliability, screening and radiation
hardness assurance requirements for commercial/ Industrial/ space flight projects.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 2N2222
TID level screened per MIL-PRF-19500
Also available with ELDRS testing to 0.01 Rad(s)/ sec
PIND testing option available
MKCR/MHCR chip die available
RHA (Radiation Hardness Assured) lot by lot validation testing
TO-206AA
(TO-18)
Package
Also available in:
UA package
(surface mount)
MVR2N2222AUA
APPLICATIONS / BENEFITS
Rad-Hard power supplies
Rad-Hard motor controls
General purpose switching, Commercial/ Industrial
Instrumentation Amps
EPS Satellite switching power applications
Commercial / Industrial power supplies
UB package
(surface mount)
MVR2N2222AUB
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
(1)
Thermal Resistance Junction-to-Ambient
Total Power Dissipation:
Collector-Base Voltage, Emitter Open
Emitter-Base Voltage, Collector Open
Collector-Emitter Voltage, Base Open
Collector Current, dc
Solder Temperature @ 10 s
Notes:
1. See
Figure 4
2. See
Figure 3
(2)
Symbol
T
J
and T
STG
R
ӨJC
R
ӨJA
P
T
V
CBO
V
EBO
V
CEO
I
C
T
SP
Value
-65 to +200
150
325
0.5
1.0
75
6
50
800
260
Unit
ºC
ºC/W
ºC/W
W
V
V
V
mA
o
@ T
A
= +25 ºC
@ T
C
= +25 ºC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
C
T4-LDS-0331, Rev. 2 (04/15/14)
©2014 Microsemi Corporation
Page 1 of 8
MVR2N2222A(L)
MECHANICAL and PACKAGING
CASE: Hermetically sealed, nickel plated kovar base, nickel cap
TERMINALS: Gold plate over nickel, kovar
MARKING: Part number, date code, manufacturer’s ID
WEIGHT: Approximately 0.3 grams
See
Package Dimensions
on last page.
PART NOMENCLATURE
MVR
Reliability Level
MVR* – 100K Rads (Si)
2N2222A
(L)
P
PIND
Long-Leaded
JEDEC type number
*The MVR designator is our internal part nomenclature assigned to this family of parts, in lieu of pending JANTXVR
submissions through DLA (Defense Logistic Agency).
Symbol
I
B
I
C
I
E
R
G
V
CB
V
CBO
V
CE
V
CEO
V
EB
SYMBOLS & DEFINITIONS
Definition
Base current: The value of the dc current into the base terminal.
Collector current: The value of the dc current into the collector terminal.
Emitter current: The value of the dc current into the emitter terminal.
Gate drive impedance or Gate resistance
Collector-base voltage: The dc voltage between the collector and the base.
Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
Collector-emitter voltage: The dc voltage between the collector and the emitter.
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
Emitter-base voltage: The dc voltage between the emitter and the base
Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal
open-circuited.
V
EBO
T4-LDS-0331, Rev. 2 (04/15/14)
©2014 Microsemi Corporation
Page 2 of 8
MVR2N2222A(L)
ELECTRICAL CHARACTERISTICS
@ T
A
= 25 ºC unless otherwise noted.
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Collector-Base Cutoff Current
V
CB
= 75 V
V
CB
= 60 V
Emitter-Base Cutoff Current
V
EB
= 6.0 V
V
EB
= 4.0 V
Collector-Emitter Cutoff Current
V
CE
= 50 V
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Base-Emitter Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Symbol
Min.
Max.
Unit
V
(BR)CEO
I
CBO
I
EBO
I
CES
50
10
10
10
10
50
V
A
nA
A
nA
nA
h
FE
50
75
100
100
30
325
300
V
CE(sat)
V
BE(sat)
0.6
0.3
1.0
1.2
2.0
V
V
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 mA, V
CE
= 10 V, f = 1.0 kHz
Magnitude of Small–Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 20 mA, V
CE
= 20 V, f = 100 MHz
Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz
f
1.0 MHz
Input Capacitance
V
EB
= 0.5 V, I
C
= 0, 100 kHz
f
1.0 MHz
(1) Pulse Test: Pulse Width = 300
s,
Duty Cycle
2.0%
Symbol
h
fe
|h
fe
|
C
obo
C
ibo
Min.
50
2.5
Max.
Unit
8.0
25
pF
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
Turn-Off Time
Symbol
t
on
t
off
Min.
Max.
35
300
Unit
s
ns
T4-LDS-0331, Rev. 2 (04/15/14)
©2014 Microsemi Corporation
Page 3 of 8
MVR2N2222A(L)
GRAPHS
DC Operation Maximum Rating (mW)
T
A
(°C) (Ambient)
FIGURE 1
Temperature-Power Derating
DC Operation Maximum Rating (W)
Tc(°C) (Case)
FIGURE 2
Temperature-power derating (TO-18 package case base mounted).
T4-LDS-0331, Rev. 2 (04/15/14)
©2014 Microsemi Corporation
Page 4 of 8
MVR2N2222A(L)
GRAPHS
(continued)
Theta (°C/W)
Time (s)
FIGURE 3
Thermal impedance graph (R
ӨJA
)
Theta (°C/W)
Time (s)
FIGURE 4
Thermal impedance graph (R
ӨJC
)
T4-LDS-0331, Rev. 2 (04/15/14)
©2014 Microsemi Corporation
Page 5 of 8
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