Datasheet> 器件分类 > 分立半导体> 晶体管> RN2112F

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RN2112F: 产品描述TRANSISTOR SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Purpose Small Signal; 产品类别分立半导体晶体管; 文件大小238KB，共4页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN2112F概述

TRANSISTOR SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Purpose Small Signal

RN2112F规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-F3
针数	3
Reach Compliance Code	unknown
最大集电极电流 (IC)	0.1 A
最小直流电流增益 (hFE)	120
JESD-30 代码	R-PDSO-F3
JESD-609代码	e0
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	240
极性/信道类型	PNP
最大功率耗散 (Abs)	0.1 W
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	FLAT
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管元件材料	SILICON
Base Number Matches	1

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RN2112F,RN2113F

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2112F,RN2113F

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1112F, RN1113F

Unit in mm

Equivalent Circuit

Maximum Ratings

(Ta

25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

CBO

CEO

EBO

stg

Rating

−50

−5

−100

100

150

−55~150

Unit

°C

JEDEC

EIAJ

TOSHIBA

Weight: 2.3 mg

―

2−2HA1A

000707EAA1

•

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general

can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and

to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or

damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the

most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling

Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

•

The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal

equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are

neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or

failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy

control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control

instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document

shall be made at the customer’s own risk.

•

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by

TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its

use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or

others.

•

The information contained herein is subject to change without notice.

2001-02-08

1/4

RN2112F相似产品对比

	RN2112F	RN2113F
描述	TRANSISTOR SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Purpose Small Signal
是否无铅	含铅	含铅
是否Rohs认证	不符合	不符合
厂商名称	Toshiba(东芝)	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
针数	3	3
Reach Compliance Code	unknown	unknown
最大集电极电流 (IC)	0.1 A	0.1 A
最小直流电流增益 (hFE)	120	120
JESD-30 代码	R-PDSO-F3	R-PDSO-F3
JESD-609代码	e0	e0
元件数量	1	1
端子数量	3	3
最高工作温度	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	240	240
极性/信道类型	PNP	PNP
最大功率耗散 (Abs)	0.1 W	0.1 W
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子面层	TIN LEAD	TIN LEAD
端子形式	FLAT	FLAT
端子位置	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED
晶体管元件材料	SILICON	SILICON

RN2112F

RN2112F概述

RN2112F规格参数

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RN2112F相似产品对比

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