UNISONIC TECHNOLOGIES CO.,LTD
MJE13011
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED
SWITCHING
FEATURES
* High voltage, high speed switching
* High reliability
1
TO-220F
*Pb-free plating product number: MJE13011L
PIN CONFIGURATION
PIN NO.
1
2
3
PIN NAME
BASE
COLLECTOR
EMITTER
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MJE13011-TF3-T MJE13011L-TF3-T
Package
TO-220F
Packing
Tube
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,LTD
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QW-R219-006,B
MJE13011
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25℃)
SYMBOL
V
CBO
V
CEO
V
CEO(SUS)
V
EBO
I
C
I
B
P
D
T
J
T
STG
RATINGS
450
400
400
7
10
3
80
+150
-40 ~ +150
UNIT
V
V
V
V
A
A
W
℃
℃
ELECTRICAL SPECIFICATIONS
(T
C
=25℃, Unless Otherwise Specified.)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector-Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Switching Time
SYMBOL
V
CBO
V
CEO
V
CEO (SUS)
V
EBO
V
CE (SAT)
V
BE (SAT)
I
CBO
I
EBO
h
FE
t
ON
t
STG
t
F
TEST CONDITIONS
I
CBO
=1mA
I
CEO
=10mA
I
C
=1A
I
EBO
=0.1mA
I
C
=4A, I
B
=0.8A
V
CBO
=450V
V
EBO
=7V
I
C
=4A, V
CE
=5V
I
C
=7.5A, I
B1
=-I
B2
=1.5A
R
L
=20Ω, Pw=20µs, Duty
≤
2%
MIN
450
400
400
7
TYP
MAX
UNIT
V
V
V
V
V
V
mA
mA
µs
µs
µs
1.2
1.5
1.0
0.1
10
1.0
2.0
1.0
CLASSIFICATION of h
FE
RANK
RANGE
A
10 ~ 16
B
15 ~ 21
C
20 ~ 26
D
25 ~ 31
E
30 ~ 36
F
35 ~ 40
THERMAL DATA
PARAMETER
Thermal Resistance Junction to Case
SYMBOL
θ
JC
RATINGS
4
UNIT
℃/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R219-006,B
MJE13011
SWITCHING TIME TEST CIRCUIT
NPN EPITAXIAL SILICON TRANSISTOR
R
L
=20Ω
I
B1
I
B2
I
B1
I
B2
I
C
0.9I
C
I
C
P
W
=20μs
t
ON
0.1I
C
t
STG
t
F
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R219-006,B
MJE13011
TYPICAL CHARACTERISTICS
Collector Output Characteristics
14
12
Collector Current, I
C
(A)
NPN EPITAXIAL SILICON TRANSISTOR
DC Current Gain
300
200
DC Current Gain, h
FE
T
C
=25℃
A
9 00 m
70 0 mA
5 00 mA
V
CE
=5V
100
50
30
10
5
3
1
0.03 0.05 0.1
0.3 0.5
1
3
5
10
T
C
=120℃
25℃
-20℃
-40℃
10
8
6
4
2
0
0
2
4
6
300mA
200mA
I
B
=100mA
8
10
12
14
Collector Emitter Voltage, V
CE
(V)
Collector Current, I
C
(A)
Base and Collector Saturation Voltage
Saturation Voltage, V
CE (SAT),
V
BE (SAT)
(V)
3
1
0.5
0.3
0.1
0.05
0.03
0.01
0.03 0.05 0.1
V
CE(SAT)
V
BE(SAT)
T
C
=25℃
I
C
=5I
B
Collector Current, I
C
(A)
30
T
C
=25℃
Single Pulse
10
5
3
1
0.5
0.3
0.1
0.05
0.03
1
3
5
Safe Operating Area
50μs
100μs
200μs
500μs
P
W
=1ms
0.3 0.5
1
3
5
10
10
30 50 100
300 500
Collector Current, I
C
(A)
Switching Time
3
t
STG
Switching Time (µs)
Collector Emitter Voltage, V
CE
(V)
T
C
=25℃
I
C
=5I
B1
=5I
B2
1
0.5
0.3
t
ON
t
F
0.1
0.3
0.5
1
3
5
10
Collector Current, I
C
(A)
UTC assum es no responsibility for equipm ent failures that result from using products at values that
exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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