2SK3050
Transistors
10V Drive Nch MOS FET
2SK3050
Structure
Silicon N-channel MOSFET
External dimensions
(Unit : mm)
CPT3
6.5
5.1
2.3
0.5
Features
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V
GSS
)
guaranteed to be
±30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
5.5
1.5
0.9
0.75
0.65
(1)Gate
(2)Drain
(3)Source
0.9
(1)
2.3
(2)
(3)
2.3
0.8Min.
0.5
1.0
Abbreviated symbol : K3050
Applications
Switching
Packaging specifications
Package
Code
Type
Basic ordering unit (pieces)
Taping
TL
2500
Gate
∗1
Inner circuit
Drain
2SK3050
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Source current
(Body Diode)
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
L 10mH, V
DD
=50V,
R
G
=25Ω,
1Pulse, Tch=25°C
Symbol
V
DSS
V
GSS
Continuous
Pulsed
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
DR
I
DRP
I
S
I
SP
I
AS
E
AS
P
D
Tch
Tstg
∗1
∗2
∗2
∗1
∗1
Limits
600
±30
2
6
2
6
2
6
2
21
20
150
−55
to
+150
Unit
V
V
A
A
A
A
A
A
A
mJ
W
°C
°C
∗1
BODY DIODE
Source
Thermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
6.25
Unit
°C/W
Rev.A
2.5
1.5
9.5
1/5
2SK3050
Transistors
Electrical characteristics
(Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗
Pulsed
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
∗
| Y
fs
|
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−
600
−
2.0
−
0.5
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
4.4
1.0
280
48
16
12
17
29
105
12.8
3.3
5.5
Max.
±100
−
100
4.0
5.5
−
−
−
−
−
−
−
−
25.6
−
−
Unit
nA
V
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=±30V,
V
DS
=0V
I
D
=1mA,
V
GS
=0V
V
DS
=600V,
V
GS
=0V
V
DS
=10V,
I
D
=1mA
I
D
=1A,
V
GS
=10V
I
D
=1A,
V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=1A,
V
DD
300V
V
GS
=10V
R
L
=300Ω
R
G
=10Ω
V
DD
=300V
V
GS
=10V
I
D
=2A
Body diode characteristics
(Source-drain) (Ta=25°C)
Parameter
Symbol
Forward voltage
Reverse recovery time
Reverse recovery charge
∗
Pulsed
V
SD
t
rr
Q
rr
∗
∗
Min.
−
−
−
Typ.
−
460
2.0
Max.
2.0
−
−
Unit
V
ns
µC
Conditions
I
S
= 2A, V
GS
=0V
I
DR
=2A, V
GS
=0V
di/dt= 100A /
µs
Rev.A
2/5
2SK3050
Transistors
Electrical characteristic curves
10
5
ar
ea
)
2.0
5
Ta=25°C
Pulsed
V
GS
=10V
2
V
DS
=
10V
Pulsed
DRAIN CURRENT : I
D
(A)
2
1
0.5
0.2
0.1
0.05
10
DRAIN CURRENT : I
D
(A)
1.6
6V
DRAIN CURRENT : I
D
(A)
is on
th S(
in RD
n
tio by
ra d
pe mite
O li
is
m
s
1
0.5
Ta=
−25°C
25°C
75°C
125°C
s
0
µ
s
10
1m
P
W
D
C
O
0
=
1
1.2
s
0m
tion
ra
pe
5.5V
0.8
5V
0.2
0.1
0.05
0.02
0
0.4
4.5V
0.02
Tc=25°C
Single pulse
0.01
1 2
5 10 20
50 100 200 500 1000
0
0
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.1 Maximum safe operating area
Fig.2 Typical output characteristics
Fig.3 Typical transfer characteristics
GATE THRESHOLD VOLTAGE : V
GS(th)
(V)
6
5
4
3
2
1
0
−50
−25
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
V
DS
=
10V
l
D
=1mA
100
V
GS
=
10V
Pulsed
Ta=125°C
75°C
9
8
7
6
I
D
=2A
Ta=25°C
Pulsed
20
25°C
−25°C
10
5
5
4
3
0
1A
2
0
25
50
75
100 125
150
0.01 0.02
0.05 0.1 0.2
0.5
1
2
5
10
5
10
15
20
25
30
CHANNEL TEMPERATURE : Tch
(°C)
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.4 Gate threshold voltage
vs. channel temperature
Fig.5 Static drain-source on-state
resistance vs. drain current
Fig.6 Static drain-source on-state
resistance vs. gate-source voltage
FORWARD TRANSFER ADMITTANCE : |Y
fS
|
(S)
REVERSE DRAIN CURRENT : I
DR
(A)
15
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
V
GS
=
10V
Pulsed
2
V
DS
=10V
Pulsed
Ta=−25°C
25°C
75°C
125°C
5
2
1
0.5
0.2
0.1
0.05
0.02
0
V
GS
=0V
Pulsed
1
0.5
10
Ta=125°C
75°C
25°C
−25°C
I
D
=2A
0.2
5
1A
0.1
0.05
0
−50 −25
0
25
50
75
100 125 150
0.02
0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
CHANNEL TEMPERATURE : Tch
(°C)
DRAIN CURRENT : I
D
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.7 Static drain-source on-state
resistance vs. channel temperature
Fig.8 Forward transfer admittance
vs. drain current
Fig.9 Reverse drain current
vs. source-drain voltage (
Ι
)
Rev.A
3/5
2SK3050
Transistors
5
REVERSE DRAIN CURRENT : I
DR
(A)
Ta=25°C
Pulsed
0V
CAPACITANCE : C
(pF)
1000
500
200
100
50
20
10
5000
2000
SWITCHING TIME : t
(ns)
2
1
0.5
V
GS
=10V
C
iss
1000
500
200
100
50
20
10
Ta=25°C
V
DD
=300V
V
GS
=10V
R
G
=10Ω
Pulsed
C
oss
t
f
0.2
0.1
0.05
0
C
rss
Ta=25°C
5
V
GS
=0V
f=1MHz
2
Pulsed
0.5
1.0
1.5
0.5
1
2
5
10
20
50 100 200
500 1000
t
d(off)
t
r
0.5
1
t
d(on)
2
5
10
20
0.05 0.1 0.2
SOURCE-DRAIN VOLTAGE : V
SD
(V)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(A)
Fig.10 Reverse drain current
vs. source-drain voltage (
ΙΙ
)
Fig.11 Typical capacitance
vs. drain-source voltage
Fig.12 Switching characteristics
500
DRAIN-SOURCE VOLTAGE : V
DS
(V)
14
V
DS
V
DD
=400V
V
GS
400
12
10
REVERSE RECOVERY TIME : trr
(ns)
GATE-SOURCE VOLTAGE : V
GS
(V)
Ta=25°C
I
D
=2A
Pulsed
5000
Ta=25°C
di/dt=100A/µs
V
GS
=0V
2000
Pulsed
300
350V
100V
1000
500
V
DD
=100V
8
350V
200
6
4
400V
200
100
50
0.05 0.1 0.2
100
2
0
0
0
16
2
3
4
5
10
12
14
0.5
1
2
5
10
TOTAL GATE CHARGE : Qg
(nC)
REVERSE DRAIN CURRENT : I
DR
(A)
Fig.13 Dynamic input characteristics
Fig.14 Reverse recovery time
vs. reverse drain current
10
NORMALIZED TRANSIENT : r
(t)
THERMAL RESISTANCE
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
Tc=25°C
θ
th(ch-c)
(t)=r(t) ·
θ
th(ch-c)
θ
th(ch-c)
=6.25°C/W
PW
T
D=PW
T
0.001
10µ
100µ
1m
10m
100m
1
10
PULSE WIDTH : PW
(s)
Fig.15 Normalized transient thermal
resistance vs. pulse width
Rev.A
4/5
2SK3050
Transistors
Switching characteristics measurement circuit
Pulse width
50%
10%
10%
90%
50%
V
GS
I
D
D.U.T.
R
L
V
DS
V
GS
V
DS
R
G
10%
90%
90%
t
d(off)
t
f
t
off
V
DD
t
d(on)
t
on
t
r
Fig.16 Switching time measurement circuit
Fig.17 Switching time waveforms
I
G
=2mA
R
G
V
GS
I
D
D.U.T.
R
L
V
DS
V
DD
Fig.18 Gate charge measurement circuit
Rev.A
5/5
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