2SK2094
Transistors
Electrical characteristics curve
10
5
DRAIN CURRENT : I
D
(A)
4
Op
is era
l i m ti o
i te n i
d nt
by hi
R
D
s a
r
S
(
on ea
)
P
D
W
=
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
2
1
0.5
0.2
0.1
0.05
10
m
s
3
10V
8V
6V
4V
Ta
=
25°C
Pulsed
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
Ta=125°C
75°C
25°C
−25°C
V
DS
=
10V
Pulsed
s
1m
C
O
pe
r
at
io
n
V
GS
=3V
2
1
0.02
Tc
=25°C
Single pulse
0.01
0.1 0.2 0.5 1
2
5
10 20
50 100
0
0
1
2
3
4
5
0.005
0
1
2
3
4
5
6
7
8
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.1 Maximum Safe Operating Area
Fig.2 Typical Output Characteristics
Fig.3 Typical Transfer Characteristics
GATE THRESHOLD VOLTAGE : V
GS(th)
(V)
4
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005 0.01 0.02 0.05 0.1 0.2
0.5
Ta=125°C
75°C
25°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
V
DS
=
10V
l
D
=1mA
10
V
GS
=
10V
Pulsed
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005 0.01
0.02
0.05 0.1 0.2
Ta=125°C
75°C
25°C
−25°C
V
GS
=
4V
Pulsed
3
2
1
0
−50
−25
0
25
50
75
100 125
15
0
1
2
5
0.5
1
2
5
CHANNEL TEMPERATURE : Tch
(°C)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
Fig.4 Gate Threshold Voltage
Fig.4
vs. Channel Temperature
Fig.5 Static Drain-Source On-State Resistance
Fig.6 Static Drain-Source On-State Resistance
Fig.6
vs. Drain Current (
ΙΙ
)
Fig.5
vs. Drain Current (
Ι
)
FORWARD TRANSFER ADMITTANCE : Y
fS
(S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
I
D
=2A
1A
Ta
=
25°C
Pulsed
0.8
0.7
V
GS
=
10V
I
D
=
1A
Pulsed
10
5
2
1
0.5
0.2
0.1
Ta=
−25°C
25°C
75°C
125°C
V
DS
=10V
Pulsed
0.6
0.5
0.4
0.3
0.2
0.05
0.02
0.01
0.005 0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
0.1
0
−50 −25
0
25
50
75
100 125 150
5
10
15
20
GATE-SOURCE VOLTAGE : V
GS
(V)
CHANNEL TEMPERATURE : Tch
(°C)
DRAIN CURRENT : I
D
(A)
Fig.7 Static Drain-Source On-State Resistance
Fig.7
vs. Gate-Source Voltage
Fig.8 Static Drain-Source On-State Resistance
Fig.8
vs. Channel Temperature
Fig.9 Forward Transfer Admittance
Fig.9
vs. Drain Current
Rev.A
3/4
2SK2094
Transistors
REVERSE DRAIN CURRENT : I
DR
(A)
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
0.5
1
Ta=125°C
75°C
25°C
−25°C
V
GS
=0V
Pulsed
REVERSE DRAIN CURRENT : I
DR
(A)
5
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0
0.5
1
CAPACITANCE : C
(pF)
0V
=
1
V
GS
0V
Ta
=
25°C
Pulsed
2000
1000
500
Ta
=
25°C
f
=
1MHz
V
GS
=
0V
Pulsed
C
iss
200
100
50
C
oss
C
rss
1.5
1.5
20
1
2
5
10
20
50
100
SOURCE-DRAIN VOLTAGE : V
SD
(V)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
Fig.10 Reverse Drain Current
Fig.10
vs. Source-Drain Voltage (
Ι
)
Fig.11 Reverse Drain Current
Fig.11
vs. Source-Drain Voltage (
ΙΙ
)
Fig.12 Typical Capacitance
Fig.12
vs. Drain-Source Voltage
500
200
SWITCHING TIME : t
(ns)
NORMALIZED TRANSIENT
THERMAL RESISTANCE : r
( t )
t
d(off)
100
50
20
10
5
2
0.02
Ta=25°C
V
DD
=30V
V
GS
=10V
R
G
=10Ω
Pulsed
10
1
D=1
0.5
0.2
t
f
0.1
t
r
t
d(on)
0.1
0.05
0.02
Tc=25°C
θ
th(ch-c)
(t)=r (t)
θ
th (ch-c)
θ
th(ch-c)
=6.25°C/W
0.01
0.01
Single pulse
0.001
10µ
100µ
1m
10m
PW
T
D=PW
T
0.05 0.1
0.2
0.5
1
2
5
100m
1
10
DRAIN CURRENT : I
D
(A)
PULSE WIDTH : PW
(s)
Fig.13
Switching characteristics
(See Figure. 15 and 16 for
the measurement circuit and
resultant waveforms)
Fig.14 Normalized Transient Thermal Resistance vs . Pulse Width
Switching characteristics measurement circuit
Pulse Width
50%
10%
10%
90%
50%
V
GS
I
D
D.U.T.
R
L
V
DS
V
GS
V
DS
R
G
10%
90%
90%
t
d(off)
t
f
t
off
V
DD
t
d(on)
t
on
t
r
Fig.15 Switching Time Test Circuit
Fig.16 Switching Time Waveforms
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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