2SD2098 / 2SD2118 / 2SD2097
Transistors
Low V
CE(sat)
transistor (strobe flash)
2SD2098 / 2SD2118 / 2SD2097
Features
1) Low V
CE(sat)
.
V
CE(sat)
= 0.25V (Typ.)
(I
C
/I
B
= 4A / 0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SB1386 / 2SB1412 / 2SB1326.
External dimensions
(Unit : mm)
2SD2098
0.5±0.1
4.5
+0.2
−0.1
1.6±0.1
1.5
+0.2
−0.1
2.5
+0.2
−0.1
4.0±0.3
(1)
(2)
(3)
0.4±0.1
1.5±0.1
1.0±0.2
0.4
+0.1
−0.05
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
Structure
Epitaxial planar type
NPN silicon transistor
Abbreviated symbol : DJ∗
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
2SD2118
1.5±0.3
6.5
±
0.2
5.1
+0.2
−0.1
C0.5
2.3
+
0.2
−
0.1
0.5
±
0.1
5.5
+
0.3
−
0.1
0.75
0.9
0.65
±
0.1
0.55
±
0.1
2.3
±
0.2 2.3
±
0.2
1.0
±
0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SD2097
6.8±0.2
2.5±0.2
0.65Max.
1.0
0.5±0.1
(1)
(2)
(3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
14.5±0.5
4.4±0.2
0.9
(1) Emitter
(2) Collector
(3) Base
∗
Denotes h
FE
Rev.A
2.5
9.5
±
0.5
0.9
1.5
1/4
2SD2098 / 2SD2118 / 2SD2097
Transistors
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
2SD2098
Collector power
dissipation
P
C
Limits
50
20
6
5
10
0.5
2
2SD2118
2SD2097
Junction temperature
Storage temperature
Tj
Tstg
1
10
1
150
−55
to
+150
W(Tc=25°C)
W
°C
°C
∗3
Unit
V
V
V
A(DC)
A(Pulse)
∗1
W
∗2
∗1
Single pulse Pw=10ms
∗2
When mounted on a 40×40×0.7 mm ceramic board.
∗3
Printed circuit board glass epoxy board, 1.6 mm thick with copper plating 100mm
2
or larger.
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
50
20
6
−
−
−
120
−
−
Typ.
−
−
−
−
−
0.3
−
150
35
Max.
−
−
−
0.5
0.5
1.0
390
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=40V
V
EB
=5V
Conditions
I
C
/I
B
=4A/0.1A
V
CE
=2V,
I
C
=0.5A
V
CE
=6V,
I
E
=−50mA,
f=100MHz
V
CE
=20V,
I
E
=0A,
f=1MHz
∗
∗
Packaging specifications and h
FE
Package
Code
Type
2SD2098
2SD2118
2SD2097
h
FE
QR
QR
QR
−
−
−
Taping
T100
1000
TL
2500
−
TV2
2500
−
−
Basic ordering unit (pieces)
h
FE
values are classified as follows :
Item
h
FE
Q
120 to 270
R
180 to 390
Rev.A
2/4
2SD2098 / 2SD2118 / 2SD2097
Transistors
Electrical characteristic curves
COLLECTOR CURRENT : I
C
(A)
10
5
V
CE
=2V
Ta=100°C
25°C
−25°C
5
50mA
45mA
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
2
1
0.5
0.2
0.1
0.05
0.02
0.01
5m
2m
1m
0
4
Ta=25°C
30mA
25mA
20mA
15mA
40mA
35mA
10mA
5000
2000
1000
500
200
100
50
20
10
Ta=25°C
V
CE
=5V
3
2V
1V
2
5mA
1
I
B
=0mA
1.6
2.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
0.4
0.8
1.2
5
1m 2m 5m 0.010.02 0.050.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current (
Ι
)
5000
2000
DC CURRENT GAIN : h
FE
V
CE
=1V
5000
2000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
V
CE
=2V
2
1
0.5
Ta=25°C
DC CURRENT GAIN : h
FE
1000
500
200
100
50
20
10
Ta=100°C
25°C
−25°C
1000
500
200
100
50
20
10
Ta=100°C
25°C
−25°C
0.2
0.1
0.05
0.02
I
C
/I
B
=50
40
30
10
5
1m 2m 5m 0.010.02 0.05 0.10.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
5
1m 2m 5m0.010.02 0.050.10.2 0.5 1 2
5 10
0.01
2m 5m0.010.02 0.05
0.1
0.2 0.5 1
2
5 10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs.
collector current (
ΙΙ
)
Fig.5 DC current gain vs.
collector current (
ΙΙΙ
)
Fig.6 Collector-emitter
saturation voltage vs.
collector current (
Ι
)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
2
1
0.5
l
C
/l
B
=10
l
C
/l
B
=30
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
2
1
0.5
2
1
0.5
0.2
0.1
0.05
0.02
l
C
/l
B
=40
0.2
0.1
0.05
Ta=100°C
25°C
−25°C
0.2
0.1
0.05
0.02
Ta=100°C
25°C
−25°C
Ta=100°C
25°C
−25°C
0.02
0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
0.01
2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5 10
0.01
2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5
10
Fig.7 Collector-emitter
saturation voltage vs.
collector current (
ΙΙ
)
Fig.8 Collector-emitter
saturation voltage vs.
collector current (
ΙΙΙ
)
Fig.9 Collector-emitter
saturation voltage vs.
collector current (IV)
Rev.A
3/4
2SD2098 / 2SD2118 / 2SD2097
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
2
1
0.5
TRANSITION FREQUENCY : f
T
(MHz)
l
C
/l
B
=50
1000
500
200
100
50
20
10
5
2
Ta=25°C
V
CE
=6V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
1000
500
Ta=25°C
f=1MHz
I
C
=0A
I
E
=0A
Cib
0.2
0.1
0.05
0.02
Ta=100°C
25°C
−25°C
200
100
50
Cob
20
10
0.1 0.2
0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : I
C
(A)
5
10
1
−1m −2m −5m−10m−20m −50m−0.1 −0.2 −0.5 −1
EMITTER CURRENT : I
E
(A)
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
Fig.10 Collector-emitter
saturation voltage vs.
collector current (V)
Fig.11 Gain bandwidth product vs.
emitter current
Fig.12 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
50
COLLECTOR CURRENT : I
C
(A)
20
10
5
2
1
500m
200m
100m
50m
20m
10m
Pw
=
1
0
COLLECTOR CURRENT : I
C
(A)
Ic max (Pulse)
Pw
Ta=25(°C)
Single pulse
Recommended land
pattern
50
20
10
5
2
1
500m
200m
100m
50m
20m
10m
Ic max (Pulse)
Ic max (Pulse)
Ta=25 (°C)
Single pulse
0m
µ
s
00
=
1
s
Pw
m
=
1
s
Pw
10m
=
s
0m
ms
=
1
00
Pw
=
1
Pw
s
D
C
0.2 0.5 1 2
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.13 Safe operating area
(2SD2098)
DC
5 10 20 50 100 200 500
0.2 0.5 1
2
5 10 20 50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.14 Safe operating area
(2SD2118)
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Microchip MCU
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