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2SB1710_1

产品描述General purpose amplification (−30V, −1A)
文件大小90KB,共3页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
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2SB1710_1概述

General purpose amplification (−30V, −1A)

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2SB1710
Transistors
General purpose amplification (−30V,
−1A)
2SB1710
Application
Low frequency amplifier
Driver
External dimensions
(Unit : mm)
TSMT3
1.0MAX
2.9
0.4
0.85
0.7
Features
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE
(sat)
≤ −350mV
at Ic =
−500mA
/ I
B
=
−25mA
(3)
1.6
2.8
0~0.1
0.3~0.6
0.16
(1)
(2)
0.95 0.95
1.9
(1) Base
(2) Emitter
(3) Collector
Each lead has same dimensions
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
Collector-emitter voltage
V
EBO
Emitter-base voltage
I
C
Collector current
I
CP
P
C
Power dissipation
Junction temperature
Tj
Range of storage temperature
Tstg
∗1
Single pulse, P
W
=1ms
∗2
Each Terminal Mounted on a Recommended
Packaging specifications
Unit
V
V
V
A
A
∗1
mW
∗2
°C
°C
Parameter
Collector-base voltage
Limits
−30
−30
−6
−1
−2
500
150
−55~+150
Package
Type
Code
Basic ordering unit (pieces)
2SB1710
Taping
TL
3000
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Pulsed
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−30
−30
−6
270
Typ.
−150
320
7
Max.
−100
−100
−350
680
Unit
V
V
V
nA
nA
mV
MHz
pF
Conditions
I
C
=−10µA
I
C
=−1mA
I
E
=−10µA
V
CB
=−30V
V
EB
=−6V
I
C
=−500mA,
I
B
=−25mA
V
CE
=−2V,
I
C
=−100mA
V
CE
=−2V,
I
E
=100mA,
f=100MHz
V
CB
=−10V,
I
E
=0A,
f=1MHz
Rev.A
1/2

2SB1710_1相似产品对比

2SB1710_1 2SB1710
描述 General purpose amplification (−30V, −1A) General purpose amplification (−30V, −1A)

 
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