MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA13H4452M
440-520MHz 13W 12.5V MOBILE RADIO
BLOCK DIAGRAM
2
3
DESCRIPTION
The RA13H4452M is a 13-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 440- to 520-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At V
GG
=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>13W,
η
T
>40% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA13H4452M-E01
RA13H4452M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA13H4452M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA13H4452M
RATING
17
6
100
20
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
PARAMETER
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=440-520MHz,
Z
G
=Z
L
=50Ω
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=10.0-15.2V, P
in
=25-70mW,
P
out
<20W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=13W (V
GG
control),
Load VSWR=20:1
1
No parasitic oscillation
No degradation or
destroy
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
CONDITIONS
MIN
440
13
40
TYP
MAX
520
UNIT
MHz
W
%
-30
3:1
dBc
—
mA
—
—
All parameters, conditions, ratings, and limits are subject to change without notice.
RA13H4452M
MITSUBISHI ELECTRIC
2/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA13H4452M
2
nd
, 3
rd
HARMONICS versus FREQUENCY
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
30
OUTPUT POWER P
out
(W)
INPUT VSWR
ρ
in
(-)
25
P
out
120
HARMONICS (dBc)
100
80
η
T
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
-20
-30
-40
-50
-60
-70
430
3
rd
nd
20
15
10
5
0
430
ρ
in
TOTAL EFFICIENCY
η
T
(%)
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
2
60
40
20
0
530
450
470
490
510
FREQUENCY f(MHz)
450
470
490
510
FREQUENCY f(MHz)
530
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
DRAIN CURRENT I
DD
(A)
P
out
5
4
Gp
5
4
Gp
40
30
20
10
0
-15
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
40
30
20
I
D D
3
2
f=440MHz,
V
DD
=12.5V,
V
GG
=5V
3
2
f=480MHz,
V
DD
=12.5V,
V
GG
=5V
I
DD
1
0
10
0
-15 -10
-5
0
5
1
0
20
10
15
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
P
out
5
4
Gp
40
30
20
I
DD
3
2
f=520MHz,
V
DD
=12.5V,
V
GG
=5V
10
0
-15
1
0
-10 -5
0
5
10 15
INPUT POWER P
in
(dBm)
20
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
10
5
0
2
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
16
I
D D
f=440MHz,
V
GG
=5V,
P
in
=50mW
P
out
DRAIN CURRENT I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
6
DRAIN CURRENT I
DD
(A)
5
4
3
2
1
0
OUTPUT POWER P
out
(W)
30
25
20
15
10
5
0
2
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
16
I
D D
f=480MHz,
V
GG
=5V,
P
in
=50mW
P
out
6
DRAIN CURRENT I
DD
(A)
5
4
3
2
1
0
RA13H4452M
MITSUBISHI ELECTRIC
3/9
DRAIN CURRENT
I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA13H4452M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
I
D D
f=520MHz,
V
GG
=5V,
P
in
=50mW
P
out
6
DRAIN CURRENT I
DD
(A)
5
4
3
2
1
0
2
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
16
10
5
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
10
5
0
2.5
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
I
D D
f=440MHz,
V
DD
=12.5V,
P
in
=50mW
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
6
DRAIN CURRENT I
DD
(A)
5
OUTPUT POWER P
out
(W)
30
25
20
15
I
DD
f=480MHz,
V
DD
=12.5V,
P
in
=50mW
6
DRAIN CURRENT I
DD
(A)
5
P
out
P
out
4
3
2
1
0
5.5
4
3
2
1
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
10
5
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
I
D D
f=520MHz,
V
DD
=12.5V,
P
in
=50mW
6
DRAIN CURRENT I
DD
(A)
5
P
out
4
3
2
1
0
5.5
10
5
0
2.5
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
RA13H4452M
MITSUBISHI ELECTRIC
4/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA13H4452M
OUTLINE DRAWING
(mm)
66.0 ±0.5
3.0 ±0.3
7.25 ±0.8
60.0 ±0.5
51.5 ±0.5
2-R2 ±0.5
21.0 ±0.5
9.5 ±0.5
5
1
2
3
4
14.0 ±1
2.0 ±0.5
Ø0.45 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
3.1 +0.6/-0.4
0.09 ±0.02
7.5 ±0.5
(50.4)
2.3 ±0.3
4.0 ±0.3
(9.88)
RA13H4452M
MITSUBISHI ELECTRIC
5/9
17.0 ±0.5
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
23 Dec 2002
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