UNISONIC TECHNOLOGIES CO., LTD
2SC2688
NPN EPITAXIAL SILICON TRANSISTOR
NPN SILICON TRANSISTOR
DESCRIPTION
The UTC 2SC2688 is designed for use in Color TV chroma
output circuits.
FEATURES
* High Electrostatic-Discharge-Resistance.
ESDR: 1000V TYP. (E-B reverse bias, C=2300pF)
* Low C
re
, High f
T
C
re
≤3.0
pF (V
CB
=30V)
f
T
≥50MHz
(V
CE
=30V, I
E
=-10mA)
1
TO-126
*Pb-free plating product number: 2SC2688L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SC2688-x-T60-A-K
2SC2688L-x-T60-A-K
Package
TO-126
Pin Assignment
1
2
3
E
C
B
Packing
Bulk
2SC2688L-x-T60-A-K
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
(1) K: Bulk
(2) refer to Pin Assignment
(3) T60: TO-126
(4) x: refer to Classification of h
FE
(5) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R204-023,A
2SC2688
ABSOLUTE MAXIMUM RATING
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
NPN EPITAXIAL SILICON TRANSISTOR
RATINGS
UNIT
300
V
300
V
5.0
V
200
mA
Ta=25℃
1.25
W
Total Power Dissipation
P
D
T
C
=25℃
10
W
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
SYMBOL
Collector Saturation Voltage
V
CE(SAT)
Collector Cutoff Current
I
CBO
Emitter Cutoff Current
I
EBO
DC Current Gain
h
FE
Gain Bandwidth Product
f
T
Feedback Capacitance
C
re
Note 1. * Pulsed PW
≤
350µs, Duty Cycle
≤
2%
TEST CONDITIONS
I
C
=20mA, I
B
=5.0mA
V
CB
=200V, I
E
=0
V
EB
=5.0V, I
C
=0
V
CE
=10V, I
C
=10mA
V
CE
=30V, I
E
=-10mA
V
CB
=30V, I
E
=0, f=1.0MHz
MIN
TYP
MAX
1.5
100
100
250
3
UNIT
V
nA
nA
MHz
pF
40
50
80
80
CLASSIFICATION OF h
FE
Rank
Range
N
40 ~ 80
M
60 ~ 120
L
100 ~ 200
K
16 ~ 250
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-023,A
2SC2688
Open Collector
NPN EPITAXIAL SILICON TRANSISTOR
BURNOUT TEST CIRCUIT BY DISCHARGE OF CAPACITOR
TEST CONDITION
1. E-B reverse bias
2.C=2300pF
3. Apply on shot pulse to T.U.T.
(Transistor Under the Test) by SW.
JUDGEMENT
Reject; BV
EBO
waveform defect
As a result if T.U.T. is not rejected,
apply higher voltage to capacitor and
test again.
SW.
T.U.T
V
D
C=2 300pF
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QW-R204-023,A
2SC2688
TYPICAL CHARACTERISTICS
(Ta=25℃)
Total Power Dissipation Vs
.
Ambinet Temperature
NPN EPITAXIAL SILICON TRANSISTOR
Total Power Dissipation, P
D
(W)
Total Power Dissipation, P
D
(W)
1.5
Total Power Dissipation Vs.
Ambinet Temperature
Free Air
10
8
6
4
2
0
Infinite Heat Sink
1.25
1.0
0.75
0.5
0.25
0
25 50 75 100 125 150 175
Ambient Temperature, Ta (℃)
25 50 75 100 125 150
Ambient Temperature, Ta (℃)
14
Collector Current, I
C
(mA)
Collector Current vs.
Collector to Emitter Voltage
3.0
150µA
Collector Current, I
C
(mA)
Collector Current vs.
Collector to Emitter Voltage
30µA
12
10
8
6
4
2
2.5
2.0
1.5
1.0
0.5
0
50
100
150
Collector TO Emitter Voltage, V
CE
(V)
20µA
I
B
=10µA
100µA
I
B
=50µA
0
2 4
6
8 10 12 14
Collector TO Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
DC Current Gain, h
FE
Collector Current vs. Base to
Emitter Voltage
70
V
CE
=10V
60
50
40
30
20
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base to Emitter Voltage, V
BE
(V)
DC Current Gain vs. Collector
Current
V
CE
=10V
200
100
50
10
5
1
0.1
0.5 1
5 10 50 100 5001000
Collector Current, I
C
(mA)
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QW-R204-023,A
2SC2688
TYPICAL CHARACTERISTICS
Base Saturation Voltage, V
BE (SAT)
(V)
Collector Saturation Voltage, V
CE (SAT)
(V)
NPN EPITAXIAL SILICON TRANSISTOR
10.0
5.0
1.0
0.5
0.1
0.05
0.01
0.1
I
C
=10·I
B
V
BE(SAT)
Gain Bandwidth Product, f
T
(MHz)
Base And Collector Saturation
Voltage vs. Collector Current
Gain Banddwidth Product Vs
.
Emitter Current
V
CE
=30V
200
100
50
V
CE(SAT )
0.5 1
5 10 50 100 5001000
Collector Current, I
C
(mA)
10
-1
-5 -10
-50 -100
Emitter Current, I
E
(mA)
Feedback Capacitance, C
re
(pF)
Feedback Capacitance
vs.Collector to Base Voltage
I
E
=0
f=1MHz
10
5
1
5 10
1
50 100
Collector to Base Voltage, V
CB
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-023,A
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