UNISONIC TECHNOLOGIES CO.,LTD
2SC3320
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED
SWITCHING
FEATURES
* High voltage, high speed switching
* High reliability
1
TO-3P
*Pb-free plating product number:2SC3320L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SC3320-T3P-F-T
2SC3320L-T3P-F-T
Pin Assignment
1
2
3
B
C
E
Package
TO-3P
Packing
Tube
2SC3320L-T3P-F-T
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Lead Plating
(1) T: Tube
(2) refer to Pin Assignment
(3) T3P: TO-3P
(4) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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PARAMETER
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25℃)
SYMBOL
RATINGS
UNIT
Collector Base Voltage
V
CBO
500
V
V
CEO
400
V
Collector Emitter Voltage
400
V
V
CEO(SUS)
Emitter Base Voltage
V
EBO
7
V
Collector Current
I
C
15
A
Base Current
I
B
5
A
Power Dissipation
P
D
80
W
℃
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-40 ~ +150
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~+70℃ operating temperature range
and assured by design from -20℃~+85℃.
ELECTRICAL SPECIFICATIONS
(T
C
=25℃, Unless Otherwise Specified.)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Switching Time
SYMBOL
V
CBO
V
CEO
V
CEO(SUS)
V
EBO
V
CE (SAT)
V
BE (SAT)
I
CBO
I
EBO
h
FE
t
ON
t
STG
t
F
TEST CONDITIONS
I
CBO
=1mA
I
CEO
=10mA
I
C
=0.2A
I
EBO
=1mA
I
C
=6A, I
B
=1.2A
V
CBO
=500V
V
EBO
=7V
I
C
=6A, V
CE
=5V
I
C
=7.5A, I
B1
=1.5A, I
B2
=-3A
R
L
=20Ω, Pw=20µs, Duty
≤
2%
MIN
500
400
400
7
TYP
MAX
UNIT
V
V
V
V
V
V
mA
mA
µs
µs
µs
1
1.5
1
1
10
0.5
1.5
0.15
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance Junction to Case
SYMBOL
θ
JC
RATINGS
1.55
UNIT
℃/W
UNISONIC TECHNOLOGIES CO., LTD
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2SC3320
SWITCHING TIME TEST CIRCUIT
R
L
=20Ω
NPN EPITAXIAL SILICON TRANSISTOR
I
B1
I
B2
I
B1
I
B2
I
C
0.9I
C
I
C
P
W
=20μs
t
ON
0.1I
C
t
STG
t
F
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TYPICAL CHARACTERISTICS
Collector Output Characteristics
5
NPN EPITAXIAL SILICON TRANSISTOR
DC Current Gain
300
100
50
30
10
5
3
1
T
C
=150℃ 75℃ 25℃ -50℃
V
CE
=5V
Collector Emitter Voltage, V
CE
(V)
3
I
C
=1A
2A
3A
5A
10A
T
C
=25℃
1
0.5
0.3
0.1
0.05
0.03
0.03 0.05 0.1
DC Current Gain, h
FE
0.3 0.5
1
3
5
0.05 0.1
0.3 0.5
1
3
5
10 15
Base Current, I
B
(A)
Base and Collector Saturation Voltage
4
3
1
0.5
0.3
V
CE(SAT)
0.1
0.05
0.03
0.01
0.05 0.1
V
BE(SAT)
T
C
=25℃I
C
=5I
B
30
10
Collector Current, I
C
(A)
Collector Current, I
C
(A)
Safe Operating Area
10
μ
0
μ
10
s
Saturation Voltage, V
CE (SAT),
V
BE (SAT)
(V)
s
5
3
1
0.5
0.3
T
C
=25℃
0.05 Single Pulse
0.03
1
3 5
10
0.1
P
W
=1ms
DC
0.3 0.5
1
3
5
10
20
30 50 100
300 5001000
Collector Current, I
C
(A)
Collector Emitter voltage, V
CE
(V)
Switching Time
1.5
1
t
STG
Switching Time (µs)
0.5
0.3
t
ON
0.1
T
C
=25℃
0.05 V
CC
=150V
I
C
=5I
B1
=-2.5I
B2
0.03
0.5
1
t
F
3
5
10
25
Collector Current, I
C
(A)
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NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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