UTC 2SC2881
NPN EPITAXIAL SILICON TRANSISTOR
VOLTAGE AMPLIFIER
APPLICATIONS POWER
AMPLIFIER APPLICATIONS
FEATURES
* High voltage: V
CEO
= 120V
* High transition frequency: f
T
=120MHz(typ.)
* Pc=1.0 ~ 2.0 W(mounted on ceramic substrate)
* Complementary to 2SA1201
1
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
SYMBOL
RATINGS
120
120
5
800
160
500
1000
150
-55 ~ 150
UNIT
V
V
V
mA
mA
mW
°C
°C
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector power dissipation
P
C
(Note 1)
Junction temperature
T
j
Storage temperature range
T
stg
Note 1: Mounted on ceramic substrate( 250mm
2
×0.8t
)
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
SYMBOL
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
f
T
C
ob
TEST CONDITION
I
C
=10mA, I
B
=0
I
E
=1mA, Ic=0
V
CB
=120V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=100mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=100mA
V
CB
=10V, f=1MHz, I
E
=0
MIN
120
5
TYP
MAX UNIT
V
V
μA
μA
V
V
MHz
pF
80
0.1
0.1
240
1.0
1.0
120
30
CLASSIFICATION OF h
FE
RANK
RANGE
O
80 - 160
Y
120 - 240
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R208-032,A
UTC 2SC2881
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL PERFORMANCE CHARACTERISTICS
800
50 20
Collector current, Ic (mA)
600
Ic - V
CE
10
5
3
2
200
IR
L
=8次
B
=1mA
0
0
12
8
4
Collector-emitter voltage V
CE
(V)
V
CE
(sat) - Ic
Common emitter
Ic/I
B
=10
Collector current, Ic (A)
16
Common
emitter
Ta=25℃
Collector current, Ic (mA)
1000
500
300
100
50
30
-25
RL=8次
Ta=100℃
h
FE
- Ic
Common emitter
V
CE
=5V
25
400
0
10
3
30
100
300
10
Collector current Ic (mA)
Ic - V
BE
Common emitter
V
CE
=5V
1000
1
Collector -emitter saturation voltage,
V
CE (sat)
(V)
0.5
0.3
1.0
0.8
0.6
0.4
0.2
0
RL=8次
Ta=100℃ 25
-25
0.1
RL=8次
Ta=100℃
25
0.05
0.03
3
10
-25
30
100
300
1000
0
Collector current, Ic (mA)
3000
Safe Operating Area
Ic max (pulse)*
1.0
0.4
0.6
0.2
0.8
Base-emitter voltage V
BE
(V)
Pc - Ta
(1)
1.2
1.2
Collector power dissipation, Pc (W)
1ms*
1.0
0.8
0.6
0.4
0.2
0
(2)
1000
Ic max (continuous)
500
300
Collector current, Ic (mA)
100
50
30
10
DC operation
Ta=25℃
10ms*
(1) Mounted on ceramic substrate
2
( 250mm
×
0.8t )
(2) No heat sink
100ms*
*:Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature
Tested without a substrate
5
Ta=25℃
3
0
20
40
60
80
100 120 140 160
Ambient temperature, Ta (℃)
300
1
0.3
3
10
100
30
1
Collector-emitter voltage, V
CE
(V)
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R208-032,A
UTC 2SC2881
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R208-032,A
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