UNISONIC TECHNOLOGIES CO., LTD
2SB1412
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
DESCRIPTION
The UTC 2SB1412 is an epitaxial planar type PNP silicon
transistor.
1
FEATURES
*Excellent DC current gain characteristics
*Low V
CE(SAT)
V
CE(SAT)
= -0.35V (Typ)
(I
C
/I
B
= -4A/-0.1A)
TO-252
*Pb-free plating product number:2SB1412L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SB1412-TN3-F-R
2SB1412L-TN3-F-R
Package
TO-252
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
2SB1412L-TN3-F-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Lead Plating
(1) R: Tape Reel
(2) refer to Pin Assignment
(3) TN3: TO-252
(4) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R209-021,A
2SB1412
PARAMETER
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25°C , unless otherwise specified)
SYMBOL
LIMITS
UNIT
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current(DC)
I
C
-5
A
Collector Current(PULSE) Single pulse, Pw=10ms
I
CP
-10
A
Collector Power Dissipation
P
D
1
W
Collector Power Dissipation (note2)
P
D
W
10(T
C
=25°C)
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.When mounted on a 40*40*0.7mm ceramic board.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector Base Breakdown Voltage
BV
CBO
I
C
= -50μA
Collector Emitter Breakdown Voltage BV
CEO
I
C
= -1mA
Emitter Base Breakdown Voltage
BV
EBO
I
E
= -50μA
Collector Cut-Off Current
I
CBO
V
CB
= -20V
Emitter Cut-Off Current
I
EBO
V
EB
= -5V
DC Current Transfer Ratio
h
FE
V
CE
= -2V,Ic= -0.5A
Collector-Emitter Saturation Voltage V
CE(SAT)
I
C
/I
B
= -4A/-0.1A
Transition Frequency
f
T
V
CE
= -6V, I
E
= 50 mA, f=30MHz
Output Capacitance
Cob
V
CB
= -20V, I
E
= 0 A, f=1MHz
MIN
-30
-20
-6
TYP
MAX
UNIT
V
V
V
μA
μA
V
MHz
pF
82
120
60
-0.5
-0.5
390
-1.0
CLASSIFICATION OF hFE
RANK
RANGE
P
82-180
Q
120-270
R
180-390
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QW-R209-021,A
2SB1412
TYPICAL CHARACTERISTICS
Grounded Emitter Propagation
Characteristics
-10
-5 V
CE
= -2V
Collector Current: Ic(mA)
PNP EPITAXIAL SILICON TRANSISTOR
Grounded Emitter Output
Characteristics
-5
-4
-50mA
-45mA
-30mA Ta=25℃
-25mA
-20mA
-15mA
-3
-10mA
-2
-35mA
-40mA
-5mA
-200m
-100m
-50m
-20m
-10m
-5m
-2m
-1m
0
Ta=25℃
Ta= -25℃
Collector Current: Ic(A)
-2
-1
-500m
Ta=100℃
-1
0
0
I
B
=0mA
-1.6
-2.0
-0.2 -0.4 -0.6 -0.8
-1.0 -1.2 -1.4
-0.4
-0.8
-1.2
Base to Emitter Voltage:V
BE
(V)
DC Current Gain vs.Collector Current (I)
5k
Ta=25℃
2k
DC Current Gain:
h
FE
DC Current Gain:
h
FE
1k
500
Vc
E
= -5V
200
100
50
20
10
5
-1m-2m-5m
-0.01-0.02-0.05 -0.1-0.2
-0.5-1 -2 -5 -10
Collector Current : Ic(A)
DC Current Gain vs.Collector Current (III)
5k
Vc
E
= -2V
2k
DC Current Gain:
h
FE
1k
500
200
100
50
20
10
5
-1m-2m-5m
-0.01-0.02-0.05 -0.1-0.2
-0.5-1 -2 -5 -10
Collector Current : Ic(A)
Ta=100℃
Collector Saturation Voltage:V
CE
(
SAT
) ( V)
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
Vc
E
= -2V
Vc
E
= -1V
5k
2k
1k
500
200
100
50
20
10
Collector to Emitter Voltage:V
CE
(V)
DC Current Gain vs.Collector
Current(II)
Vc
E
= -1V
Ta=100℃
Ta=25℃
Ta= -25℃
5
-1m-2m-5m
-0.01-0.02-0.05 -0.1-0.2
-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
Collector-emitter Saturation Voltage
vs.Collector Current (I)
Ta=25℃
Ta= -25℃
Ta=25℃
Ic/I
B
=50/1
40/1
30/1
10/1
-0.02
-0.01
-0.2
-2m -5m
-0.01-0.02-0.05 -0.1
-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
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QW-R209-021,A
2SB1412
Collector-emitter Saturation Voltage
vs.Collector Current (II)
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Collector-emitter Saturation Voltage
vs.Collector Current (III)
Collector Saturation Voltage:V
CE
(
SAT
) ( V)
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
Ta= -25℃
-0.02
-0.01
-2m
Ta=100℃
Ta=25℃
Ic/I
B
=30
Collector Saturation Voltage:V
CE
(
SAT
) ( V)
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
Ta=100℃
Ic/I
B
=10
Ta=25℃
-0.02
-0.01
-2m -5m
Ta= -25℃
-0.2
-0.01-0.02-0.05 -0.1
-0.5-1
-2 -5 -10
-0.2
-5m
-0.01-0.02-0.05 -0.1
-0.5-1 -2 -5 -10
Collector Current : Ic(A)
Collector-emitter Saturation Voltage
vs.Collector Current (IV)
Ic/I
B
=40
Ta= -25℃
Ta=25℃
Collector Saturation Voltage:V
CE
(
SAT
)
( V)
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
-2m -5m
Ta=100℃
-5
Collector Current : Ic(A)
Collector-emitter Saturation Voltage
vs.Collector Current (V)
Ic/I
B
=50
-2
-1
-0.5
-0.2
-0.1
Ta= -25℃
Ta=25℃
Ta=100℃
Collector Saturation Voltage:V
CE
(
SAT
) ( V)
-0.05
-0.2
-0.01-0.02-0.05 -0.1
-0.5-1
-2 -5 -10
Collector Current : Ic(A)
-0.02
-0.01
-2m
-0.2
-5m
-0.01-0.02-0.05 -0.1
-0.5-1 -2 -5 -10
Collector Current : Ic(A)
Collector Output Capacitance :Cob (pF)
1000
500
Transetion Frequency :fT (MHz)
200
100
50
20
10
5
2
1
1
Gain Bandwidth Product vs.Emitter
Current
1000
500
200
100
50
20
Ta=25℃
Vc
E
= -6V
Collector Output Capacitance
vs.Collector-Base Voltage
Ta=25℃
f =1MHz
I
E
=0A
2
5
50 100200 500 1000
Emitter Current : I
E
(mA)
10 20
10
-0.1 -0.2 -0.5 -1
-2
-5
-10 -20
-50
Collector to Base Voltage:V
CB
(V)
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4 of 5
QW-R209-021,A
2SB1412
Emitter Input Capacitance vs.Emitter-
Base Voltage
Ta=25℃
f=1MHz
I
c
=0A
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
1000
Emitter Input Capacitance:Cib (pF)
500
200
100
50
20
-0.1
-0.2
-0.5 -1
-2
-5 -10
Emitter To Base Voltage : V
EB
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-021,A
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