UTC 2SA1507
PNP EPITAXIAL SILICON TRANSISTORS
SWITCHING TRANSISTOR
APPLICAITONS
*Color TV audio output, converters, inverters.
FEATURES
*High breakdown voltage
*Large current capacitance.
*High-speed switching
1
TO-126
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Collector Dissipation(Tc=25°C)
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
Icp
Pc
Pc
T
j
T
STG
RATINGS
-180
-160
-6
-1.5
-2.5
1.5
10
150
-55 to +150
UNIT
V
V
V
A
A
W
W
°C
°C
ELECTRICAL CHARACTERISTICS (
Ta=25°C)
PARAMETER
Collector-to-Base Breakdown Voltage
Collector-to-Base Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Turn-On Time
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR) EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
Cob
ton
TEST CONDITIONS
Ic=-10µA I
E
=0
Ic= -1mA,R
BE
=∞
Ic=0, I
E
= -10µA
V
CB
= -120V,I
E
=0
V
EB
= -4V,Ic=0
V
CE
= -5V,Ic= -100mA
V
CE
= -5V,Ic= -10mA
Ic= -500mA,I
B
= -50mA
Ic= -500mA,I
B
= -50mA
V
CE
= -10V,Ic= -50mA
V
CB
= -10V, f=1MHz
See specified Test Circuit
MIN
-180
-160
-6
TYP
MAX
UNIT
V
V
V
µA
µA
100
90
-0.2
-0.83
120
22
0.04
-0.1
-0.1
400
-0.5
-1.2
V
V
MHz
pF
µs
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R204-009,A
UTC 2SA1507
PARAMETER
Storage Time
Fall Time
PNP EPITAXIAL SILICON TRANSISTORS
SYMBOL
tstg
tf
TEST CONDITIONS
See specified Test Circuit
See specified Test Circuit
MIN
TYP
0.7
0.04
MAX
UNIT
µs
µs
CLASSIFICATION OF hFE1
RANK
RANGE
R
100-200
S
140-280
T
200-400
SWITCHING TIME TEST CIRCUIT
PW=20μs
D.C.≦1%
INPUT
50Ω
V
R
I
B2
I
B1
R
B
+
OUTPUT
R
L
+
14.3Ω
100μF
470μF
5V
-100V
-10I
B1
=10IB2=I
C
= 0.7A
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R204-009,A
UTC 2SA1507
PNP EPITAXIAL SILICON TRANSISTORS
Ic-V
CE
Ic-V
CE
TYPICAL CHARACTERISTICS
-1.8
-1.6
Collector Current Ic -A
Collector Current Ic -A
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
-1
-2
- 40m
-10mA
-1.0
-5.0mA
-60mA
-80mA
A
A
-20m
-0.8
-4.5mA
-4.0mA
-3.5mA
-3.0mA
-2.5mA
-2.0mA
-1.5mA
-0.6
-5mA
-2mA
-1mA
-3
-4
-0.4
-0.2
-1.0mA
-0.5mA
I
B
=0
-40
-50
I
B
=0
-5
0
0
-10
-20
-30
Collector -to-Emitter Voltage,V -V
CE
Ic-V
BE
-1.6
-1.4
Collector Current ,Ic -A
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
Base-to-Emitter Voltage,V -V
BE
-1.2
Ta =75⊥
Ta =-25⊥
Ta =25⊥
V
CE
= -5V
DC Current Gain,hFE
5
3
2
100
7
5
3
2
10
7
5
7 -0.01
Collector -to-Emitter Voltage,V -V
CE
hFE -Ic
Ta =75⊥
V
CE
= -5V
Ta =25⊥
Ta =-25⊥
2
3
5 7 -0.1 2 3 5 7 -1.0
Collector Current,Ic -A
2 3
fT -Ic
5
Gain-Bandwidth Product,fT-MHz
3
2
-100
7
5
3
2
-10
7
5
V
CE
= -10V
Output Capacitance,Cob-pF
-100
7
5
3
2
-10
7
5
3
7 -1.0
2 3
5
2
Cob-V
CB
f=1MHz
7
-0.01
2 3
5
7 -0.1
2 3
5 7
-1.0
2
7 -10
2
3
5 7
-100
UTC
UNISONIC TECHNOLOGIES CO. LTD
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QW-R204-009,A
UTC 2SA1507
PNP EPITAXIAL SILICON TRANSISTORS
Collector-to-Base Voltage,V -V
CB
V
BE
(sat)-Ic
I
C
/I
B
=10
Collector Current,Ic -A
V
CE
(sat)-Ic
I
C
/I
B
=10
Collector-to-Emitter Saturation
Voltage,V
BE
(sat) -mV
-1000
5
3
2
-100
5
3
2
-10
5
3
2
7-0.01
Ta =75℃
-10
7
5
3
2
-1.0
7
5
3
2
7-0.01
Ta =75℃
Ta =-25℃
Collector-to-Emitter Saturation
Voltage,V
CE
(sat) -mV
Ta =25℃
Ta =25℃
Ta =-25℃
2 3 5 7 -1.0
2 3 5 7-0.1
Collector Current,Ic -A
ASO
Icp
I
C
DC
DC
Op
e
rat
i
10
0m
Op
era
2 3
2 3 5 7 -1.0
2 3 5 7-0.1
Collector Current,Ic -A
Pc -Ta
2 3
Collector Current,Ic -A
Collector Dissipation,Pc -W
-10
5
3
2
-1.0
5
3
2
10ms
1m
s
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120 140
160
Ambient Temperature,Ta -℃
No
he
at
s
on
Tc
-10
=2
5
℃
5
3
Ta = 25℃
2
Single pulse
-0.01
5
2 3 5 7
2 3
7 -1.0
2 3 5 7 -10
-100
Collector-to-Emitter Voltage,V -V
CE
tio
n
Tc
=2
5
℃
si n
k
Pc -Tc
12
10
8
6
4
2
0
Collector Dissipation,Pc -W
0
20
40
60
80 100 120
Case Temperature, Tc-℃
140
160
UTC
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QW-R204-009,A
UTC 2SA1507
PNP EPITAXIAL SILICON TRANSISTORS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
5
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