UNISONIC TECHNOLOGIES CO., LTD
MJE13005
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE.
NPN SILICON TRANSISTOR
1
TO-220
FEATURES
* V
CEO(SUS)
= 400 V
* Reverse bias SOA with inductive loads @ T
C
= 100℃
* Inductive switching matrix 2 to 4 Amp, 25 and 100℃
. . . tc @ 3A, 100℃ is 180 ns (Typ)
* 700V blocking capability
* SOA and switching applications information
1
TO-220F
*Pb-free plating product number: MJE13005L
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MJE13005-TA3-T
MJE13005L-TA3-T
MJE13005-TF3-T
MJE13005L-TF3-T
Package
TO-220
TO-220F
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tube
MJE13005L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1)T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 8
QW-R203-018,D
MJE13005
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Emitter Current
Continuous
Peak (1)
Continuous
Peak (1)
Continuous
Peak (1)
SYMBOL
V
CEO(SUS)
V
CBO
V
EBO
Ic
I
CM
I
B
I
BM
I
E
I
EM
NPN SILICON TRANSISTOR
RATINGS
400
700
9
4
8
2
4
6
UNIT
V
V
V
A
A
A
A
A
12
A
Total Power Dissipation at Ta=25℃
2
W
P
D
Derate above 25℃
16
mW/℃
75
W
Total Power Dissipation at T
C
=25℃
P
D
Derate above 25℃
600
mW/℃
Operating and Storage Junction Temperature Range
T
J
, T
STG
-65 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
(1) Pulse Test : Pulse Width=5ms,Duty Cycle≤10%
SYMBOL
θ
JA
θ
JC
MAX
62.5
1.67
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS
(Tc=25℃, unless otherwise specified)
PARAMETER
*OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
SYMBOL
TEST CONDITIONS
MIN
400
1
mA
5
1
mA
TYP
MAX
UNIT
V
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current
with bass forward biased
Clamped Inductive SOA with Base
Reverse Biased
*ON CHARACTERISTICS (1)
DC Current Gain
V
CEO(SUS)
Ic=10mA , I
B
=0
V
CBO
=Rated Value, V
BE(OFF)
=1.5 V
I
CBO
V
CBO
=Rated Value, V
BE(OFF)
=1.5V,
Tc=100℃
I
EBO
V
EB
=9V, Ic=0
Is/b
RBSOA
h
FE1
h
FE2
Ic=1A, V
CE
=5V
Ic=2A, V
CE
=5V
Ic=1A, I
B
=0.2A
Ic=2A, I
B
=0.5A
Ic=4A, I
B
=1A
Ic=2A, I
B
=0.5A, Ta=100℃
Ic=1A, I
B
=0.2A
Ic=2A, I
B
=0.5A
Ic=2A, I
B
=0.5A, Tc=100℃
See Figure 11
See Figure 12
10
8
60
40
0.5
0.6
1
1
1.2
1.6
1.5
4
65
Collector-Emitter Saturation Voltage
V
CE(SAT)
V
V
V
V
V
V
V
MHz
pF
Base-Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
V
BE (SAT)
f
T
Cob
Ic=500mA, V
CE
=10V, f=1MHz
V
CB
=10V, I
E
=0, f=0.1MHz
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QW-R203-018,D
MJE13005
ELECTRICAL CHARACTERISTICS (Cont.)
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
t
D
Rise Time
t
R
Vcc=125V, Ic=2A, I
B1
=I
B2
=0.4A,
t
P
=25µs, Duty Cycle≤1%
Storage Time
t
S
Fall Time
t
F
* Pulse Test: Pulse Width=300µs, Duty Cycle≤2%
MIN
TYP
MAX
UNIT
0.025
0.3
1.7
0.4
0.1
0.7
4
0.9
µs
µs
µs
µs
Table 1.Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+5V
1N4933
33
MJE210
L
MR826*
+125V
RESISTIVE
SWITHCING
V
cc
TEST CIRCUITS
0.001μF
5V
P
w
DUTY CYCLE≦10%
t
r
, t
f
≦10ns
68
1k
33 1N4933
2N2222
1k
+5V
1N4933
0.02μF
NOTE
P
W
and V
cc
Adjusted for Desired I
c
R
B
Adjusted for Desired I
B1
270
1k
2N2905
47
1/2W
MJE200
100
-V
BE
(off)
R
B
I
B
T.U.T.
I
c
Vclamp
*SELECTED FOR≧1kV
V
CE
R
B
D1
-4.0V
TUT
R
c
SCOPE
5.1k
51
Coil Data :
FERROXCUBE core #6656
Full Bobbin ( ~ 16 Turns) #16
GAP for 200μH/20 A
Lcoil=200μH
Vcc=20V
V
clamp
=300V
Vcc=125V
Rc=62Ω
D1=1n5820 or
Equiv.
R
B
=22Ω
CIRCUIT
VALUES
OUTPUT WAVEFORMS
TEST WAVEFORMS
t
f
CLAMPED
I
c
I
c(pk)
t
1
V
CE
V
CE
or
V
clamp
TIME
t
2
t
t
f
t
1
=
t
f
UNCLAMPED>t
2
t
t
1
Adjusted to
Obtain Ic
L
coil
(Ic
pk
)
V
cc
L
coil
(Ic
pk
)
V
clamp
Test Equipment
Scope-Tektronics
475 or Equivalent
+10 V
25μS
0
-8V
t
r
, t
f
<10ns
Duty Cycly=1.0%
R
B
and Rc adjusted
for desired I
B
and Ic
t
2
=
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QW-R203-018,D
MJE13005
RESISTIVE SWITCHING PERFORMANCE
Figure 1. Turn-On Time
1
10
NPN SILICON TRANSISTOR
Figure 2. Turn-Off Time
t
S
5
0.5
t
R
Time, t (°С)
0.2
V
cc
=125V
I
c
/I
B
=5
T
J
=25°С
V
cc
=125V
I
c
/I
B
=5
T
J
=25°С
2
Time, t (°С)
0.1
1
0.05
t
D
@ V
BE(OFF)
=5V
0.5
0. 3
t
F
0.02
0.2
0.01
0.04
0.1
0. 2
0.4
1
2
4
0.1
0. 04
0. 1
0.2
0.5
1
2
4
Collector Current, I
C
(A)
Collector Current, I
C
(A)
Figure 3. Typical Thermal Response [ Z
θJC
(t)]
Transient Thermal Resistance, r(t)
(Normalized)
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
1
2
Z
θJC(t
)
=r(t ) R
θ
JC
R
θ
J C
=1.67℃/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
j(pk)
-T
C
=P
(pk )
Z
θ
JC(t)
P
(PK)
t
2
DUTY CYCLE D=t
1
/t
2
,
50
10
0
20
0
50
0
1k
t
1
5
10
20
Time, t (ms)
Figure 4. Forward Bias Safe Operating Area
10
5
Figure 5. Reverse Bias Switching Safe Operating Area
4
Collector Current, I
C
(A)
2
1
0. 5
0.2
0.1
0. 05
0.02
0.01
5
7
10
20
30
50
dc
5
ms
Collector Current, I
C(pk)
(A)
500μs
V
clamp
Tc≧100℃
I
B1
=2.0A
3
1ms
2
V
BE(off)
=9V
1
UTC MJE13005
5V
3V
1.5V
UTC MJE13005
70 100
200
300
400
500
0
0
100
200
300
400
500
600
700
800
Collector-Emitter Voltage, V
CE
(V)
Collector-Emitter Clamp Voltage, V
CE
(V)
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QW-R203-018,D
MJE13005
RESISTIVE SWITCHING PERFORMANCE
Figure 6. Forward Bias Power Derating
1
NPN SILICON TRANSISTOR
SECOND BREAKDOWN
DERATING
0.8
Power Derating Factor
0.6
0. 4
THERMAL
DERATING
0.2
0
20
40
60
80
100
120
140
160
Case Temperature, T
C
(℃)
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QW-R203-018,D