MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS48B2122
2.11 - 2.17 GHz BAND 60W GaAs FET
'(6&5,37,21
OUTLINE
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The MGFS48B2122 is a 60W push-pull type GaAs Power FET
especially designed for use in 2.11 - 2.17GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees
high reliability.
)($785(6
Â
Push-pull configuration
Â
High output power
Pout = 60W (TYP.) @ f=2.17 GHz
Â
High power gain
GLP = 12 dB (TYP.) @ f=2.17GHz
Â
High power added efficiency
$33/,&$7,21
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P.A.E. = 48 % (TYP.) @ f=2.17GHz
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48$/,7<*5$'(
IG
ICVG
UQWTEG
FTCKP
5(&200(1'('%,$6&21',7,216
VDS = 12 (V)
ID = 2.0 (A)
RG=20 (ohm) for each gate
$%62/87(0$;,0805$7,1*6
WPKV OO
(Ta=25deg.C)
Unit
V
V
W
deg.C
deg.C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
Symbol
VGDO
VGSO
PT *1
Tch
Tstg
Parameter
Gate to drain voltage
Gate to source voltage
Total power dissipation
Channel temperature
Storage temperature
Ratings
-20
-10
125
175
-65 / +175
*1 : Tc=25deg.C
(/(&75,&$/&+$5$&7(5,67,&6
(Ta=25deg.C)
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Symbol
GLP
Pout
ID(RF)
P.A.E.
Rth (ch-c)
Parameter
Linear power gain
Output power
Drain current
Power added efficiency
Thermal resistance
Test conditions
Min.
Pin=22dBm
VDS=12V, ID(RF off)=2.0A
Pin=39dBm
f=2.17GHz
11
47
-
-
Channel to Case
-
Limits
Typ.
Max.
12
48
11
48
1
-
-
15
-
1.2
r
2.11-2.17GHz band power amplifier for W-CDMA Base Station
Unit
dB
dBm
A
%
deg.C/W
MITSUBISHI
ELECTRIC
June-'04
嵌入式系统
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