UTC 2SC5765
NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER AMPLIFIER
STROBO FLASH
DESCRIPTION
*
medium power amplifier applications
*
strobo flash applications
1
FEATURES
*Low Saturation Voltage: V
CE
(sat) = 0.27 V (max.),
(Ic = 3A / I
B
=60 mA)
TO-92SP
1.EMITTER
2.COLLECTOR
3.BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
V
CBO
V
CEO
V
EBO
RATING
UNIT
V
V
V
A
A
mW
°C
°C
15
10
7
5(DC)
Collector Current
Ic
9(PLUSED)
Collector Power Dissipation
Pc(Note 1)
550
Junction Temperature
T
j
150
Storage Temperature
T
stg
-55 ~ +150
Note 1: When a device is mounted on a glass epoxy board (35 mm*30 mm*1mm)
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
SYMBOL
BV
CEO
I
CBO
I
EBO
h
FE 1 (Note 2)
h
FE2 (Note 2)
TEST CONDITIONS
I
C
=1mA,
I
B
=
0
V
CB
=15V, I
E
= 0
V
EB
= 5V, Ic=0
V
CE
=1.5V,Ic=0.5A
V
CE
=1.5V,Ic=2A
MIN
10
TYP
MAX
0.1
0.1
700
UNIT
V
μA
μA
450
320
170
Collector-Emitter Saturation Voltage
Collector Output Capacitance
Note 2: Pulse test
h
FE3 (Note 2)
V
CE
=1.5V,Ic=5A
V
CE
(sat)
(note 2)
Ic=3A,I
B
=60mA
Cob
V
CB
=10V, I
E
= 0, f=1MHz
0.27
25
V
pF
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R216-002,B
UTC 2SC5765
Ic-V
CE
NPN EPITAXIAL SILICON TRANSISTOR
V
CE(sat)
-Ic
Collector Emitter Saturation Voltage
VCE(sat)(V)
ELECTRICAL CHARACTERISTICS CURVES
5
4
10
3
2
1
0
1
60
30
20
Common Emitter
T
a
= 25℃
8
6
4
2
1
Common Emitter
Ic/I
B
=50
Ta=100℃
Collector Current Ic (A)
0.1
Ta= 25℃
Ta= -25℃
0.01
0
I
B
=0mA
2.0
1.5
1.0
0.5
CE
Collector Emitter Voltage V (V)
hFE-Ic
0.001
0.01
0.1
1
Collector Current Ic (A)
Ic-V
BE
10
10000
5.0
Collector Current Ic (A)
Common Emitter
V
CE
=1.5V
Ta=100℃
Common Emitter
V
CE
=1.5V
Ta=100℃
DC Current Gain hFE
4.0
1000
3.0
2.0
1.0
Ta= 25℃
Ta= 25℃
100
Ta= -25℃
Ta= -25℃
10
0.01
0.1
1
Collector Current Ic (A)
Safe Operating Area
10
0
0
0.2 0.4 0.6 0.8 1.0 1.2
Base Emitter Voltage V (V)
BE
Pc-Ta
1.4
100
600
Collector Power Dissipation Pc
(mW)
when a device is mounted
on a Glass epoxy board
(35mm*30mm*1mm)
Collector Current Ic (A)
10
Ic max(Pulsed)
1ms*
Ic max
(Continous)
400
1
t=100ms*
DC Operation
0.1
*Single nonrepetitive
200
0.01
0.01
pulse
Ta= 25℃
Curves must be derated linearly
with increase in temperature
V
CEO
max
100
0
0.1
1
10
Collector Emitter Voltage V (V)
CE
0
150
50
100
(℃)
Ambient Temperature Ta
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R216-002,B
UTC 2SC5765
10000
Transient thermal impedance rth ( /W)
℃
NPN EPITAXIAL SILICON TRANSISTOR
rth-tw
when a device is mounted on a Glass
epoxy board (35mm*30mm*1mm)
1000
100
10
0.001
Single pulse
0.01
0.1
1
Pulse width tw (s)
10
100
1000
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R216-002,B
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