UNISONIC TECHNOLOGIES CO., LTD
2SC5027E
HIGH VOLTAGE AND HIGH
RELIABILITY TRANSISTOR
.
NPN SILICON TRANSISTOR
FEATURES
* High Speed Switching
* Wide SOA
1
TO-220
1
TO-220F
*Pb-free plating product number: 2SC5027EL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SC5027E-x-TA3-T
2SC5027EL-x-TA3-T
2SC5027E-x-TF3-T
2SC5027EL-x-TF3-T
Package
TO-220
TO-220F
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tube
2SC5027EL-x-TA3-T
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) x: refer to Classification of h
FE1
(4) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R203-030,B
2SC5027E
ABSOLUATE MAXIUM RATINGS
(Tc = 25
℃
)
PARAMETER
NPN SILICON TRANSISTOR
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
750
V
Collector-Emitter Voltage
V
CEO
700
V
Collector-Emitter Voltage
V
EBO
7
V
Peak Collector Current
I
C
3
A
Collector Current (Pulse)
I
CP
10
A
Base Current
I
B
1.5
A
Power Dissipation
P
D
50
W
℃
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-40 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
C
= 25
℃
, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
SYMBOL
TEST CONDITIONS
BV
CBO
I
C
=1mA, I
E
=0
BV
CEO
I
C
=5mA, I
B
=0
BV
EBO
I
E
=1mA, I
C
=0
I
C
=1.5A, I
B1
= -I
B2
=0.3A
V
CEO(SUS)
L=2mH, Clamped
I
CBO
V
CB
=750V, I
E
=0
I
EBO
V
EB
=5V, I
C
=0
h
FE1
V
CE
=5V, I
C
=0.2A
h
FE 2
V
CE
=5V, I
C
=1A
V
CE (SAT)
I
C
=1.5A, I
B
=0.3A
V
BE (SAT)
I
C
=1.5A, I
B
=0.3A
Cob
V
CB
=10V, f=1MHz, I
E
=0
f
T
V
CE
=10V, I
C
=0.2A
t
ON
V
CC
=400V
I
C
=5I
B1
= -2.5I
B2
=2A
t
S
R
L
=200
Ω
t
F
MIN
750
700
7
700
10
10
40
2
1.5
60
15
0.5
3
0.3
TYP
MAX
UNIT
V
V
V
V
μA
μA
10
8
V
V
pF
MHz
μ
s
μ
s
μ
s
CLASSIFICATION of h
FE1
CLASSIFICATION
RANGE
N
10 ~ 20
R
15 ~ 30
O
20 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
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2SC5027E
■
TYPICAL CHARACTERISTICS
Static Characteristic
4.0
3.6
1000
NPN SILICON TRANSISTOR
DC Current Gain
V
CE
=5V
Collector Current, I
C
(A)
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
1
2
3
4
5
6
7
8
I
B
=250 mA
I
B
=200 mA
I
B
=150 mA
I
B
=100 mA
I
B
=80mA
I
B
=60mA
I
B
=50mA
I
B
=40mA
I
B
=30mA
I
B
=20mA
I
B
=10mA
I
B
=0mA
DC Current Gain, h
FE
3.2
100
10
9
10
1
0.01
100us
0.1
1ms
1
10
Collectoer-Emitter Voltage, V
CE
(V)
Collector Current, I
C
(A)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
Ic=5I
B
4.0
Base-Emitter on Voltage
V
CE
=5V
Saturation Voltage, V
BE(SAT)
,
V
CE(SAT)
(V)
Collector Current, Ic (A)
100us
0.1
1ms
1
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
0.1
0.01
0.01
Collector Current IC (A)
,
Base-Emitter Voltage, V
BE
(V)
Switching Time
10
Vcc =400 V
5.I
B
1= - 2.5.I
B
2=Ic
Safe Operating Area
100
IcMAX.(Pulse)
Time, t
O N
, t
STG
, t
F
(μs)
Collector Current, Ic (A)
10
IcMAX.(Continuous )
s
m
10
s
0
μ
10
1
s
1m
1
DC
0.1
0.1
0.01
0.01
0.1
1ms
1
10
1E-s
1
10
100
1000
10000
Collector-Emitter Voltage, V
CE
(V)
Collector-Emitter Voltage, V
CE
(V)
UNISONIC TECHNOLOGIES CO., LTD
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2SC5027E
TYPICAL CHARACTERISTICS(Cont.)
Reverse Operating Area
100
80
I
B2
=-0.3A
NPN SILICON TRANSISTOR
Power Derating
10
Power Dissipation, P
D
(W)
100us
1ms
1000
10000
70
60
50
40
30
20
10
Collector Current, Ic (A)
1
0.
1
0.0
1
0
0
25
50
75
100
125
150 175
10
100
Collector-Emitter Voltage, V
CE
(V)
Case Temperature, T
C
(℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-030,B
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