UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS
FEATURES
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage.
* Complementary to UTC 2SA1943
TO-3PL
*Pb-free plating product number: 2SC5200L
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
Tstg
RATINGS
230
230
5
15
1.5
150
150
-55 ~ 150
UNIT
V
V
V
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Tc=25℃)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base -Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector Output Capacitance
SYMBOL
V
(BR) CEO
V
CE (sat)
V
BE
I
CBO
I
EBO
h
FE1
h
FE2
f
T
C
ob
TEST CONDITIONS
I
C
= 50mA, I
B
=0
I
C
= 8A
,
I
B
= 0.8A
V
CE
= 5V, I
C
= 7A
V
CB
= 230V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 7A
V
CE
= 5V, I
C
= 1A
V
CB
= 10V, I
E
=0, f=1MHz
MIN
230
TYP
0.40
1.0
MAX
3.0
1.5
5.0
5.0
160
UNIT
V
V
V
μA
μA
55
35
60
30
200
MHz
pF
Note: h
FE (1)
Classification, R : 55 ~ 110, O : 80 ~ 160
CLASSIFICATION OF HFE1
RANK
Range
R
55 ~ 110
O
80 ~ 160
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R214-005,A
UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
I
C
- V
CE
-20
I
C
- V
BE
COLLECTOR CURRENT, I
C
(A)
COMMON EMITTER
T
C
=25℃
-20
COLLECTOR CURRENT, I
C
(A)
COMMON EMITTER
V
CE
= 5V
-16
800
600
400
300 250
-16
-12
200
150
-12
-8
100
50
40
30
-8
T
C
=100℃
25
-25
I
B
= 10mA
-4
-4
20
10
0
0
2
4
6
8
0
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR-EMITTER VOLTAGE, V
CE
(V)
BASE-EMITTER VOLTAGE, V
BE
(V)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE, V
CE(sat)
(V)
3
300
h
FE
- I
C
T
C
=100℃
25
-25
30
10
1
DC CURRENT GAIN, h
FE
100
0.3
0.1
T
C
=100℃
-25
25
0.03
0.01
0.01
3
1
0.01
COMMON EMITTER
I
C
/ I
B
= 10
0.1
1
10
100
COMMON EMITTER
I
C
/ I
B
= 10
0.1
1
10
100
COLLECTOR CURRENT, I
C
(A)
COLLECTOR CURRENT, I
C
(A)
SAFE OPERATING AREA
50
30
I
C
MAX. (PULSED)※
I
C
MAX.
(CONTINUOUS)
1ms※
10ms※
10
COLLECTOR CURRENT, I
C
(A)
5
3
DC OPERATION
T
C
=25℃
100ms※
1
0.5
0.3
※SINGLE
NONREPETITIVE
PULSE T
C
= 25℃
0.1
CURVES MUST BE
DERATED LINEARLY
0.05
WITH INCREASE IN
TEMPERATURE.
0.03
3
10
30
100
V
CEO
MAX.
300
1000
COLLECTOR-EMITTER VOLTAGE, V
CE
(V)
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R214-005,A
UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R214-005,A
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