UNISONIC TECHNOLOGIES CO., LTD
2SA1020
SILICON PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and power
switching applications.
PNP SILICON TRANSISTOR
1
SOT-89
FEATURES
*Low collector saturation voltage:
V
CE(SAT)
=-0.5V(max.) (I
C
=-1A)
*High speed switching time: t
STG
=1.0µs(Typ.)
*Complement to UTC 2SC2655
1
TO-92NL
*Pb-free plating product number:2SA1020L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SA1020-x-AB3-R
2SA1020L-x-AB3-R
2SA1020-x-T9N-B
2SA1020L-x-T9N-B
2SA1020-x-T9N-K
2SA1020L-x-T9N-K
Package
SOT-89
TO-92NL
TO-92NL
Pin Assignment
1
2
3
B
C
E
E
C
B
E
C
B
Packing
Tape Reel
Tape Box
Bulk
2SA1020L-x-AB3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) AB3: SOT-89, T9N: TO-92NL
(3) x: refer to Classification of h
FE1
(4) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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2SA1020
PARAMETER
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified)
RATINGS
UNIT
Collector-Base Voltage
-50
V
Collector-Emitter Voltage
-50
V
Emitter-Base Voltage
-5
V
Collector Current
-2
A
TO-92NL
900
mW
Collector Power Dissipation
P
C
SOT-89
500
mW
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector to Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Storage Time
Switching Time
Fall Time
SYMBOL
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
Cob
t
ON
t
STG
t
F
TEST CONDITIONS
Ic=-10mA, I
B
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-2V, I
C
=-0.5A
V
CE
=-2V, I
C
=-1.5A
Ic=-1A, I
B
=-0.05A
Ic=-1A, I
B
=-0.05A
V
CE
=-2V, Ic=-0.5A
V
CB
=-10V, I
E
=0, f=1MHz
MIN
-50
TYP
MAX UNIT
V
-1.0
µA
-1.0
µA
240
-0.5
-1.2
100
40
0.1
1.0
0.1
V
V
MHz
pF
µs
µs
µs
70
40
CLASSIFICATION OF h
FE1
RANK
RANGE
O
70 - 140
Y
120 - 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R211-007,B
2SA1020
TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R211-007,B
2SA1020
TYPICAL CHARACTERISTICS(Cont.)
PNP SILICON TRANSISTOR
TO-92NL
SOT-89
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R211-007,B
微控制器 MCU
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