UNISONIC TECHNOLOGIES CO., LTD
UK2996
600V SILICON N-CHANNEL
POWER MOSFET
DESCRIPTION
The UK2996 is an N-channel enhancement mode field-effect
power transistor. Intended for use in high voltage, high speed
switching applications in power supplies, DC-DC converter, relay
drive and PWM motor drive controls.
MOSFET
1
TO-220
FEATURES
* Fast switching times
* Improved inductive ruggedness
* High forward transfer admittance
* Low on resistance
* Low leakage current
* Lower input capacitance
1
TO-220F
*Pb-free plating product number: UK2996L
SYMBOL
2. Drain
1. Gate
3. Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
UK2996-TA3-T
UK2996L-TA3-T
UK2996-TF3-T
UK2996L-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
UK2996L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating Blank: Pb/Sn
,
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R502-063 ,A
UK2996
ABSOLUTE MAXIMUM RATING
PARAMETER
Drain to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Drain to Gate Voltage (R
GS
= 20 kΩ)
Gate to Source Voltage
Avalanche Current
Single Pulsed Avalanche energy (Note 2)
Repetitive Avalanche Energy (Note 3)
Total Power Dissipation (Tc = 25
℃
)
Operating Temperature Range
SYMBOL
V
DSS
I
D
I
DM
V
DGR
V
GSS
I
AR
E
AS
E
AR
P
D
T
J
RATINGS
600
10
30
600
±30
10
252
4.5
45
-55 ~ +150
MOSFET
UNIT
V
A
A
V
V
A
mJ
mJ
W
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L = 4.41 mH, I
AR
= 10 A, V
DD
= 90 V, R
G
= 25
Ω,
starting T
J
= 25°C.
3. Pulse width and frequency is limited by T
J
.
THERMAL DATA
CHARACTERISTICS
Thermal Resistance, Channel to Ambient
Thermal Resistance, Channel to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
2.78
UNIT
℃
/ W
℃
/ W
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
Gate−Source Breakdown Voltage
BV
GSS
V
DS
= 0V, I
G
= ±10µA
Drain−Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 10mA
Gate Threshold Voltage
V
GS(TH)
V
DS
= 10V, I
D
= 1mA
Gate Source Leakage Current
I
GSS
V
GS
= ±25V, V
DS
= 0V
Drain Source Leakage Current
I
DSS
V
DS
= 600V, V
GS
= 0V
Static Drain−Source ON Resistance R
DS (ON)
V
GS
= 10V, I
D
= 5A
Forward Transconductance
g
FS
V
DS
= 10V, I
D
= 5A
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn−off Delay Time
C
ISS
C
RSS
C
OSS
Q
G
Q
GS
Q
GD
t
ON
t
R
t
OFF
I
D
= 10A, V
DD
≈
400V, V
GS
= 10V
V
DS
= 20V, V
GS
= 0V, f = 1MHz
MIN TYP MAX UNIT
±30
V
600
V
2.0
4.0
V
±10 µA
100 µA
0.74 1. 0
Ω
3.4 6.8
S
1500
13
140
38
21
17
55
15
145
nC
pF
R
L
=60Ω
I
D
=5A
V
OUT
Switching
Time
Turn-off Fall Time
t
F
10V
V
GS
0V
50Ω
V
DD
≈
300V
t
P
=10μs, Duty
≤1%
27
ns
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QW-R502-063 ,A
UK2996
SOURCE−DRAIN DIODE CHARACTERISTICS
(Ta = 25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 10A
Continuous Source Current (body diode)
I
S
Integral Reverse p-n Junction
Diode in the MOSFET
MOSFET
MIN
TYP MAX UNIT
-1.7
V
10
A
Drain
Pulse Source Current (body diode)
I
SM
30
A
Gate
Source
Reverse Recovery Time
Reverse Recovery Charge
t
RR
Q
RR
V
GS
= 0V, I
S
= 10A,
dI
F
/dt = 100 A/µs
1600
17
ns
µC
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QW-R502-063 ,A
UK2996
TEST CIRCUIT AND WAVE FORM
V
DS
L
L
I
D
B
VDSS
I
AR
V
DD
DUT
t
P
t
P
V
DD
I
D
(t)
MOSFET
R
G
+15V
-15V
V
DS
(t)
Time
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QW-R502-063 ,A
UK2996
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source Voltage
COMMON
SOURCE
T
C
=25℃
8
PULSE TEST
MOSFET
5.5V
5.25V
Drain-Source on Resistance, R
DS (ON)
(Ω)
10
2.2
2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Drain-Source on Resistance vs.
Drain Current
COMMON
SOURCE
TC=25℃
PULSE TEST
Drain Current, I
D
(A)
6
4
2
0
5V
4.75V
4.5V
V
GS
=4V
0
4
8
12
16
20
V
GS
=10V
0.4
0.2
0
0.3 0.5
Drain-Source Voltage, V
DS
(V)
1
3 5
10
Drain Current, I
D
(A)
30
12
10
Drain Current, I
D
(A)
Drain Current vs. Gate-Source Voltage
Drain-Source Voltage, V
DS
(V)
COMMON
SOURCE
V
DS
=10V
PULSE TEST
16
Drain-Source Voltage vs. Gate-Source
Voltage
COMMON
SOURCE
T
C
=25℃
PULSE TEST
12
8
6
100℃
4
2
0
0
25℃
T
C
=-55℃
I
D
=10A
8
I
D
=5A
I
D
=2.5A
0
4
12
2
4
6
8
10
Gate-Source Voltage, V
GS
(V)
16
0
4
8
12
16
Gate-Source Voltage, V
GS
(V)
20
30
Continuous Source Current, I
S
(A)
Continuous Source Current vs. Drain-
Source Voltage
COMMON SOURCE
TC=25℃
PULSE TEST
10
5
3
1
0.5
0.3
0.1
10
3
V
GS
=0V
1
0
-0.4
-0.8
Drain-Source Voltage, V
DS
(V)
-1.2
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QW-R502-063 ,A
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