UNISONIC TECHNOLOGIES CO., LTD
UF740
10A, 400V, 0.55 OHM,
N-CHANNEL POWER MOSFET
DESCRIPTION
The UF740 power MOSFET is designed for high voltage, high
speed power switching applications such as switching power
supplies, switching adaptors etc.
MOSFET
1
TO-220
FEATURES
* 10A, 400V, R
DS(ON)
(0.55Ω)
* Single Pulse Avalanche Energy Rated
* Rugged - SOA is Power Dissipation Limited
* Fast Switching
1
TO-220F
SYMBOL
2.Drain
*Pb-free plating product number: UF740L
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Package
Normal
Lead Free Plating
UF740-TA3-T
UF740L-TA3-T
TO-220
UF740-TF3-T
UF740L-TF3-T
TO-220F
Note: Pin Assignment: G: GATE D: DRAIN S: SOURCE
UF740L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-078,A
UF740
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25℃, Unless Otherwise Specified)
PARAMETER
Drain to Source Voltage (T
J
=25℃~125℃)
Drain to Gate Voltage (R
GS
= 20kΩ) (T
J
=25℃~125℃)
Gate to Source Voltage
Continuous
T
C
= 100℃
Drain Current
Pulsed
Maximum Power Dissipation
Derating above 25℃
SYMBOL
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
D
RATINGS
400
400
±20
10
6.3
40
125
1.0
MOSFET
UNIT
V
V
V
A
A
A
W
W/℃
Single Pulse Avalanche Energy Rating
520
mJ
E
AS
(V
DD
=50V, starting T
J
=25℃, L=9.1µH, R
G
=25Ω, peak I
AS
= 10A)
Operating Temperature Range
T
OPR
-55 ~ +150
℃
Storage Temperature Range
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
SYMBOL
θ
JA
θ
Jc
RATINGS
62.5
1.0
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, Unless Otherwise Specified.)
PARAMETER
Drain to Source Breakdown
Voltage
Gate to Threshold Voltage
On-State Drain Current (Note 1)
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
(Note 1)
Forward Transconductance
(Note 1)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse - Transfer Capacitance
SYMBOL TEST CONDITIONS
BV
DSS
V
GS
= 0V, I
D
= 250µA
MIN TYP MAX UNIT
400
2.0
10
4.0
25
250
±500
0.47 0.55
5.8
8.9
15
25
52
25
41
6.5
23
1250
300
80
21
41
75
36
63
V
V
A
µA
µA
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
V
GS(THR)
V
GS
= V
DS
, I
D
= 250µA
I
D(ON)
V
DS
>I
D(ON)
x R
DS(ON)MAX
, V
GS
=10V
V
DS
= Rated BV
DSS
, V
GS
= 0V
I
DSS
V
DS
=0.8 x Rated BV
DSS
, V
GS
=0V,T
J
=125℃
I
GSS
V
GS
= ±20V
R
DS(ON)
g
FS
t
DLY(ON)
t
R
t
DLY(OFF)
t
F
Q
G(TOT)
Q
GS
Q
GD
C
ISS
C
OSS
C
RSS
V
GS
= 10V, I
D
= 5.2A
V
DS
≥
50V, I
D
= 5.2A
V
DD
= 200V, I
D
≈
10A,
R
GS
= 9.1Ω, R
L
= 20Ω, V
GS
= 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
V
GS
= 10V, I
D
= 10A
V
DS
= 0.8 x Rated BV
DSS
I
G(REF)
= 1.5mA
Gate Charge is Essentially Independent of
Operating Temperature
V
GS
= 0V, V
DS
=25V, f = 1.0MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-078,A
UF740
ELECTRICAL CHARACTERISTICS(Cont.)
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage
T
J
= 25℃, I
SD
= 10A, V
GS
= 0V
V
SD
(Note 1)
Modified MOSFET
Continuous Source to Drain
I
S
Symbol Showing
Current
the Integral
Pulse Source to Drain Current
Reverse P-N
(Note 2)
Junction Diode
G
I
SM
MOSFET
2.0
V
A
D
10
40
A
Reverse Recovery Time
t
RR
Reverse Recovery Charge
Q
RR
NOTES:
1. Pulse Test: Pulse width
≤
300µs, Duty Cycle≤2%.
2. Repetitive rating: Pulse width limited by maximum junction temperature.
3. V
DD
= 50V, starting T
J
= 25℃, L = 3.37mH, R
G
= 25Ω, peak I
AS
= 10A.
S
T
J
= 25℃, I
SD
= 10A, dI
SD
/dt = 100A/µs
T
J
= 25℃, I
SD
= 10A, dI
SD
/dt = 100A/µs
170
1.6
390
4.5
790
8.2
ns
µC
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3 of 6
QW-R502-078,A
UF740
TEST CIRCUITS AND WAVEFORMS
V
DS
L
BV
DSS
MOSFET
R
G
D.U.T.
V
DD
I
AS
V
DS
V
DD
0.01Ω
I
AS
Figure 1A. Unclamped Energy Test Circuit
0
t
p
t
AV
Figure 1B. Unclamped Energy Waveforms
V
DS
R
L
90%
10%
90%
R
G
V
DD
V
GS
D.U.T.
0
V
GS
10%
0
50%
PULSE WIDTH
50%
t
D(ON)
t
ON
Figure 2A. Switching Time Test Circuit
t
R
t
D(OFF)
t
F
t
OFF
Figure 2B. Resistive Switching Waveforms
CURRENT
REGULATOR
12V
BATTERY
50kΩ
0.2µF
0.3µF
D
V
DS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
V
DD
Q
G(TOT)
Q
GS
Q
GD
V
GS
V
DS
G
0
I
G(REF)
I
G
CURRENT
SAMPLING
RESISTOR
S
I
D
CURRENT
SAMPLING
RESISTOR
DUT
0
I
G(REF)
0
Figure 3A. Gate Charge Test Circuit
Figure 3B. Gate Charge Waveforms
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4 of 6
QW-R502-078,A
UF740
TYPICAL PERFORMANCE CUVES
(Unless Otherwise Specified)
MOSFET
Forward Bias Safe Operating Area
100
10μs
Output Characteristics
15
12
9
V
GS
= 5.0V
6
3
0
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 10V
V
GS
= 6.0V
PULSE DURATION=80μS
DUTY CYCLE = 0.5% MAX
V
GS
= 5.5V
Drain Current, I
D
(A)
10
100μs
1ms
1
OPERATION IN THIS
REGION IS LIMITED BY
R
DS(ON)
T
C
=25℃
T
J
=MAX RATED
SINGLE PULSE
10ms
DC
0.1
Drain Current, I
D
(A)
1
10
10
2
10
3
0
40
80
120
160
200
Drain to Source Voltage, V
DS
(V)
Drain to Source Voltage, V
DS
(V)
Saturation Characteristics
15
12
9
V
GS
=5.0V
6
3
0
V
GS
=4.5V
V
GS
=4.0V
0
2
4
6
8
10
PULSE DURATION=80μS
DUTY CYCLE = 0.5% MAX
Transfer Characteristics
100
Drain to Source Current, I
DS (ON)
(A)
V
GS
=10V
V
GS
=6.0V
V
GS
=5.5V
Drain Current, I
D
(A)
PULSE DURATION=80μS
DUTY CYCLE = 0.5% MAX
V
DS
≥50V
10
1
T
J
= 150℃
T
J
= 25℃
0.1
0
2
4
6
8
10
Drain to Source Voltage, V
DS
(V)
Gate to Source Voltage, V
SD
(V)
Normalized Drain to Source Breakdown Voltage vs. Junction
Temperature
1.25
2500
2000
1500
1000
500
0
Capacitance vs. Drain to Source Voltage
I
D
=250μA
Normalized Drain to Source
Breakdown Voltage
1.05
0.95
0.85
0.75
-60 -40 -20
Capacitance, C (pF)
1.15
V
GS
=0V, f=1MHz
C
ISS
=C
GS
+C
GD
C
RSS
=C
GD
C
OSS
≈C
DS
+C
GD
C
ISS
C
RSS
C
OSS
0
20 40 60 80
100120 140 160
1
2
5
10
2
5
10
2
2
5
10
3
Junction Temperature, T
J
(℃)
Drain to Source Voltage, V
DS
(V)
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QW-R502-078,A
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