PNE20080CPE
27 January 2020
200 V, 2 x 4 A dual common cathode hyperfast recovery
rectifier
Product data sheet
1. General description
High power density, hyperfast switching time dual recovery rectifier in common cathode
configuration with high-efficiency planar technology, encapsulated in a CFP15B (SOT1289B) power
and flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
•
•
•
•
Reverse voltage: V
R
≤ 200 V
Forward current: I
F
≤ 4 A (per diode)
Switching time: t
rr
≤ 30 ns
Pt doped life time control
Low inductance
Power and flat lead SMD plastic package
Package height typical 0.95 mm
High power capability due to clip-bond technology
Planar die design
AEC-Q101 qualified
3. Applications
•
•
•
•
•
General-purpose rectification
Hyperfast switching
Solenoid control
Piezo injection
Freewheeling applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode (unless otherwise specified)
I
F(AV)
V
R
V
RRM
V
F
I
R
average forward
current
reverse voltage
repetitive peak reverse
voltage
forward voltage
reverse current
I
F
= 4 A; T
j
= 25 °C
I
F
= 4 A; T
j
= 125 °C
V
R
= 200 V; T
j
= 25 °C
V
R
= 200 V; T
j
= 125 °C
[1]
Very short pulse, in order to maintain a stable junction temperature.
Conditions
δ = 0.5; square wave; f = 20 kHz; T
sp
≤
155 °C
T
j
= 25 °C
Min
-
-
-
[1]
[1]
[1]
[1]
-
-
-
-
Typ
-
-
-
860
710
-
2
Max
4
200
200
930
810
1
40
Unit
A
V
V
mV
mV
µA
µA
Nexperia
PNE20080CPE
200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
A1
A2
CC
anode (diode 1)
anode (diode 2)
common cathode
Simplified outline
1
3
2
Graphic symbol
CC
CFP15B (SOT1289B)
A1
A2
006aab034
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PNE20080CPE
CFP15B
Description
plastic, thermal enhanced ultra thin SMD package; 3 leads; 2.13
mm pitch; 5.8 x 4.3 x 0.95 mm body
Version
SOT1289B
7. Marking
Table 4. Marking codes
Type number
PNE20080CPE
Marking code
200E 008C
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC60134)
Symbol
V
R
V
RRM
V
R(RMS)lim
I
F
I
F(AV)
I
FSM
Parameter
reverse voltage
repetitive peak reverse
voltage
limiting RMS reverse
voltage
forward current
average forward current
non-repetitive peak
forward current
δ = 1; T
sp
≤ 150 °C
δ = 0.5; square wave; f = 20 kHz; T
sp
≤
155 °C
t
p
= 8.3 ms; single half sine wave (applied
at rated load condition); T
j(init)
= 25 °C
t
p
= 8.3 ms; single half sine wave (applied
at rated load condition); per device;
T
j(init)
= 25 °C
Per device, one diode loaded
P
tot
total power dissipation
T
amb
≤ 25 °C
[1]
[2]
-
-
1.66
2.15
W
W
Conditions
T
j
= 25 °C
Min
-
-
-
-
-
-
-
Max
200
200
140
5.6
4
90
170
Unit
V
V
V
A
A
A
A
Per diode (unless otherwise specified)
PNE20080CPE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2020. All rights reserved
Product data sheet
27 January 2020
2 / 13
Nexperia
PNE20080CPE
200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-55
-65
Max
175
175
175
Unit
°C
°C
°C
Symbol
T
j
T
amb
T
stg
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per device, one diode loaded
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Conditions
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
90
70
7
Unit
K/W
K/W
K/W
thermal resistance from in free air
junction to ambient
thermal resistance from
junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Soldering point of cathode tab.
10
2
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.50
0.33
0.20
10
0.05
0.02
0.01
0
0.25
0.10
aaa-030701
1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PNE20080CPE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2020. All rights reserved
Product data sheet
27 January 2020
3 / 13
Nexperia
PNE20080CPE
200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier
aaa-030702
10
2
duty cycle = 1
0.50
0.33
10
0.20
0.25
0.10
0.05
0.02
0.01
0
Z
th(j-a)
(K/W)
0.75
1
10
-3
10
-2
10
-1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Per diode (unless otherwise specified)
V
(BR)R
V
F
I
R
C
d
t
rr
reverse breakdown
voltage
forward voltage
reverse current
diode capacitance
reverse recovery time
step recovery
reverse recovery time
ramp recovery
reverse recovery time
I
RM
Q
rr
V
FRM
[1]
Conditions
I
R
= 100 µA; T
j
= 25 °C
I
F
= 4 A; T
j
= 25 °C
I
F
= 4 A; T
j
= 125 °C
V
R
= 200 V; T
j
= 25 °C
V
R
= 200 V; T
j
= 125 °C
V
R
= 4 V; f = 1 MHz; T
j
= 25 °C
I
F
= 0.5 A; I
R
= 1 A; I
R(meas)
= 0.25 A;
T
j
= 25 °C
dI
F
/dt = 50 A/µs; I
F
= 1 A; V
R
= 30 V;
T
j
= 25 °C
dI
F
/dt = 100 A/µs; I
F
= 1 A; V
R
= 30 V;
T
j
= 25 °C
[1]
[1]
[1]
[1]
[1]
Min
200
-
-
-
-
-
-
-
-
-
-
Typ
-
860
710
-
2
60
12
19
15
1
9
785
Max
-
930
810
1
40
-
30
-
-
-
-
-
Unit
V
mV
mV
µA
µA
pF
ns
ns
ns
A
nC
mV
peak reverse recovery
current
reverse recovery
charge
peak forward recovery
voltage
I
F
= 1 A; dI
F
/dt = 50 A/µs; T
j
= 25 °C
-
Very short pulse, in order to maintain a stable junction temperature.
PNE20080CPE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2020. All rights reserved
Product data sheet
27 January 2020
4 / 13
Nexperia
PNE20080CPE
200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier
aaa-030703
(1)
(2)
(3)
(4)
(5)
(6)
10
I
F
(A)
1
I
R
(A)
10
-5
10
-6
10
-7
(7)
10
-4
(1)
(2)
(3)
aaa-030704
10
-1
(4)
10
-8
10
-2
10
-9
10
-3
10
-10
(5)
0
0.4
0.8
V
F
(V)
1.2
0
40
80
120
160
V
R
(V)
200
pulsed condition
(1) T
j
= 175 °C
(2) T
j
= 150 °C
(3) T
j
= 125 °C
(4) T
j
= 100 °C
(5) T
j
= 85 °C
(6) T
j
= 25 °C
(7) T
j
= -40 °C
Fig. 3.
Forward current as a function of forward
voltage; typical values
aaa-030705
pulsed condition
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
Fig. 4.
Reverse current as a function of reverse
voltage; typical values
160
C
d
(pF)
120
4
P
F(AV)
(W)
3
(3)
(4)
aaa-030817
(5)
80
2
(1)
(2)
40
1
0
0
40
80
120
160
V
R
(V)
200
0
0
2
4
I
F(AV)
(A)
6
f = 1 MHz; T
amb
= 25 °C
Fig. 5.
Diode capacitance as a function of reverse
voltage; typical values
T
j
= 175 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 0.8
(5) δ = 1; DC
Fig. 6.
Average forward power dissipation as a
function of average forward current; typical
values
PNE20080CPE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2020. All rights reserved
Product data sheet
27 January 2020
5 / 13
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