1N6373 - 1N6381 Series
(ICTE-5 - ICTE-36,
MPTE-5 - MPTE-45)
1500 Watt Peak Power
Mosorb™ Zener Transient
Voltage Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high–energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic™ axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Specification Features:
Cathode
Anode
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AXIAL LEAD
CASE 41A
PLASTIC
L
MPTE
–xx
1N
63xx
YYWW
L
ICTE
–xx
YYWW
L = Assembly Location
MPTE–xx = ON Device Code
ICTE–xx = ON Device Code
1N63xx = JEDEC Device Code
YY = Year
WW = Work Week
•
•
•
•
•
•
Working Peak Reverse Voltage Range – 5 V to 45 V
Peak Power – 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA
Above 10 V
Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1.)
@ T
L
≤
25°C
Steady State Power Dissipation
@ T
L
≤
75°C, Lead Length = 3/8″
Derated above T
L
= 75°C
Thermal Resistance, Junction–to–Lead
Forward Surge Current (Note 2.)
@ T
A
= 25°C
Operating and Storage
Temperature Range
Symbol
P
PK
P
D
Value
1500
5.0
20
R
qJL
I
FSM
T
J
, T
stg
20
200
– 65 to
+175
Unit
Watts
Watts
mW/°C
°C/W
Amps
°C
ORDERING INFORMATION
Device
MPTE–xx
MPTE–xxRL4
ICTE–xx
ICTE–xxRL4
1N63xx
1N63xxRL4*
Package
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Shipping
500 Units/Box
1500/Tape & Reel
500 Units/Box
1500/Tape & Reel
500 Units/Box
1500/Tape & Reel
*Please see 1N6382 – 1N6389 (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)
for Bidirectional Devices
NOTES:
1. Nonrepetitive current pulse per Figure 5 and der-
ated above T
A
= 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW =
8.3 ms, duty cycle = 4 pulses per minute maxi-
mum.
*1N6378 Not Available in 1500/Tape & Reel
©
Semiconductor Components Industries, LLC, 2002
1
June, 2002 – Rev. 2
Publication Order Number:
1N6373/D
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3.) = 100 A)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
QV
BR
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Variation of V
BR
Forward Current
Forward Voltage @ I
F
I
PP
V
C
V
BR
V
RWM
I
R
V
F
I
T
V
I
F
I
Uni–Directional TVS
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3.) = 100 A)
JEDEC
Device
(ON Device)
1N6373
(MPTE–5)
1N6374
(MPTE–8)
1N6375
(MPTE–10)
1N6376
(MPTE–12)
1N6377
(MPTE–15)
1N6378*
(MPTE–18)
1N6379
(MPTE–22)
1N6380
(MPTE–36)
1N6381
(MPTE–45)
ICTE–5
ICTE–10
ICTE–12
ICTE–15
ICTE–18
ICTE–22
ICTE–36
V
RWM
(Note 4.)
(Volts)
5.0
8.0
10
12
15
18
22
36
45
5.0
10
12
15
18
22
36
I
R
@
V
RWM
(mA)
300
25
2.0
2.0
2.0
2.0
2.0
2.0
2.0
300
2.0
2.0
2.0
2.0
2.0
2.0
Breakdown Voltage
V
BR
(Note 5.
)
(Volts)
Min
6.0
9.4
11.7
14.1
17.6
21.2
25.9
42.4
52.9
6.0
11.7
14.1
17.6
21.2
25.9
42.4
Nom
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
@ I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
V
C
@ I
PP
(Note 6.)
V
C
(Volts)
9.4
15
16.7
21.2
25
30
37.5
65.2
78.9
9.4
16.7
21.2
25
30
37.5
65.2
I
PP
(A)
160
100
90
70
60
50
40
23
19
160
90
70
60
50
40
23
V
C
(Volts)
(Note 6.)
@ I
PP
=
1A
7.1
11.3
13.7
16.1
20.1
24.2
29.8
50.6
63.3
7.1
13.7
16.1
20.1
24.2
29.8
50.6
@ I
PP
=
10 A
7.5
11.5
14.1
16.5
20.6
25.2
32
54.3
70
7.5
14.1
16.5
20.6
25.2
32
54.3
QV
BR
(mV/°C)
4.0
8.0
12
14
18
21
26
50
60
4.0
8.0
12
14
18
21
26
Device
Marking
1N6373
MPTE–5
1N6374
MPTE–8
1N6375
MPTE–10
1N6376
MPTE–12
1N6377
MPTE–15
1N6378*
MPTE–18
1N6379
MPTE–22
1N6380
MPTE–36
1N6381
MPTE–45
ICTE–5
ICTE–10
ICTE–12
ICTE–15
ICTE–18
ICTE–22
ICTE–36
NOTES:
3. Square waveform, PW = 8.3 ms, Non–repetitive duty cycle.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to
or greater than the dc or continuous peak operating voltage level.
5. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C and minimum voltage in V
BR
is to be controlled.
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
*Not Available in the 1500/Tape & Reel
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2
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25
°
C
100
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
PPK , PEAK POWER (kW)
100
80
60
40
20
0
0
25
50
75
100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
10
1
0.1
ms
1
ms
10
ms
100
ms
1 ms
10 ms
t
P
, PULSE WIDTH
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
10,000
MEASURED @
ZERO BIAS
C, CAPACITANCE (pF)
1000
MEASURED @ V
RWM
100
10
1
10
100
1000
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
PD , STEADY STATE POWER DISSIPATION (WATTS)
3/8″
IPP, VALUE (%)
5
4
3
2
1
0
0
25
50
75
100 125 150 175
T
L
, LEAD TEMPERATURE (°C)
200
0
0
3/8″
100
t
r
≤
10
ms
PEAK VALUE - I
PP
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
HALF VALUE -
50
t
P
1
2
I
PP
2
3
4
t, TIME (ms)
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
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3
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
1000
500
IT , TEST CURRENT (AMPS)
200
100
50
20
10
5
2
1
0.3
0.5 0.7 1
2
3
5 7 10
20 30
DV
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR(NOM)
(VOLTS)
T
L
= 25°C
t
P
= 10
ms
V
BR(MIN)
= 6.0 to 11.7 V
19 V
42.4 V
21.2 V
1000
500
IT , TEST CURRENT (AMPS)
200
100
50
20
10
5
2
1
0.3
0.5 0.7 1
2
3
5 7 10
20 30
DV
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR(NOM)
(VOLTS)
180 V
120 V
T
L
= 25°C
t
P
= 10
ms
1.5KE6.8CA
through
1.5KE200CA
V
BR(NOM)
= 6.8 to 13 V
20 V
24 V
43 V
75 V
Figure 6. Dynamic Impedance
1
0.7
0.5
0.3
DERATING FACTOR
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
10
ms
0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
50
100
PULSE WIDTH
10 ms
1 ms
100
ms
Figure 7. Typical Derating Factor for Duty Cycle
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4
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10
ms
pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
TYPICAL PROTECTION CIRCUIT
Z
in
V
in
LOAD
V
L
V
V
in
(TRANSIENT)
V
L
V
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
in
(TRANSIENT)
V
L
V
in
t
d
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 8.
Figure 9.
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